Photolithography alignment mark structures, semiconductor structures, and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-9620458-B2
Application number	US-201514861591-A
Country	US
Kind code	B2
Filing date	Sep 22, 2015
Priority date	Sep 26, 2014
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

A method is provided for fabricating a photolithography alignment mark structure. The method includes providing a substrate; thrilling a first grating, a second grating, a third grating and a fourth grating in the substrate; forming a photoresist layer on a surface of the substrate; obtaining a first alignment center along a first direction and a second alignment center along a second direction based on the first grating and the fourth grating, respectively; providing a mask plate having a fifth grating pattern and a sixth grating pattern; aligning the mask plate with the substrate by using the first alignment center as an alignment center along the first direction and the second alignment center as an alignment center along the second direction; reproducing the fifth grating pattern and the sixth grating pattern in the photoresist layer; and forming a fifth grating and a sixth grating on the substrate by removing a portion of photoresist layer.

First claim

What is claimed is:

1. A method for fabricating a photolithography alignment mark structure, comprising:
providing a semiconductor substrate;
forming a first grating, a second grating, a third grating and a fourth grating in the substrate;
forming a photoresist layer on a surface of the substrate;
obtaining a first alignment center along a first direction and a second alignment center along a second direction based on the first grating and the fourth grating, respectively, by using grating diffraction;
providing a mask plate having a fifth grating pattern and a sixth grating pattern on the mask plate;
aligning the mask plate with the substrate by using the first alignment center as an alignment center along the first direction and the second alignment center as an alignment center along the second direction, wherein reticles of the second grating are interlaced with reticles of the fifth grating pattern, and the fifth grating pattern has an offset of a first distance along the first direction with respect to the second grating; and reticles of the third grating are interlaced with reticles of the sixth grating pattern, and the sixth grating pattern has an offset of the first distance along a reverse direction of the first direction with respect to the third grating;
reproducing the fifth grating pattern and the sixth grating pattern in the photoresist layer on the substrate through an exposure process; and
forming a fifth grating and a sixth grating on the surface of the substrate by removing a portion of photoresist layer.

2. The method according to claim 1 , wherein the substrate may be made of any appropriate semiconductor materials including silicon, germanium, silicon germanium, silicon on insulator (SIO), or germanium on insulator (GOI), etc.

3. The method according to claim 1 , wherein the first distance is in a range of 1 nm˜10 nm.

4. The method according to claim 1 , wherein the second grating and the third grating are arranged parallel to each other along the first direction and a distance between the second grating and the third grating is not greater than 100 μm.

5. The method according to claim 1 , wherein:
the first grating, the second grating, the third grating, the fourth grating, the fifth grating, and the sixth grating together are used as the photolithography alignment mark structure.

6. The method according to claim 5 , wherein:
the first grating, the second grating, and the third grating in the substrate are formed along the first direction;
the fourth grating in the substrate is formed along the second direction;
the first direction and the second direction are perpendicular to each other;
the fifth grating pattern and the sixth grating pattern on the mask plate are formed along the first direction;
the grating constant of the first grating is smaller than the grating constant of the second grating; and
the second grating, the third grating, the fifth grating pattern, and the sixth grating pattern have a same grating constant.

7. The method according to claim 1 , wherein:
during the formation of the first grating, the second grating, the third grating, and the fourth grating in the substrate, a seventh grating and an eighth grating are also formed in the substrate along the second direction;
the mask plate also has a ninth grating pattern and a tenth grating pattern along the second direction;
after the mask plate is aligned with the substrate, reticles of the seventh grating are interlaced with reticles of the ninth grating pattern, and the ninth grating pattern has an offset of a second distance along the second direction with respect to the seventh grating; and
reticles of the eighth grating are interlaced with reticles of the tenth grating pattern, and the tenth grating pattern has an offset of the second distance along a reverse direction of the second direction with respect to the eighth grating.

8. The method according to claim 7 , wherein:
during an exposure process, the ninth grating pattern and the tenth grating pattern on the mask plate are also reproduced in the photoresist layer on the substrate simultaneously with the fifth grating pattern and the sixth grating pattern;
during formation of the fifth grating and the sixth grating on the substrate, a ninth grating and a tenth grating are also formed on the substrate along the second direction; and
the photolithography alignment mark structure also includes the seventh grating, the eighth grating, the ninth grating, and the tenth grating.

9. A method for fabricating semiconductor structures using a photolithography alignment mark structure, comprising:
providing a semiconductor substrate having the photolithography alignment mark structure;
forming a device layer on the surface of the substrate to cover the substrate and the photolithography alignment mark structure;
forming a photoresist layer on the surface of the device layer;
using grating diffraction to obtain a first alignment center x 0 along a first direction based on a first grating, a third alignment center x 1 along the first direction based on a second grating and a fifth grating, and a fourth alignment center x 2 along the first direction based on a third grating and a sixth grating;
performing a first exposure to define a first device pattern in the photoresist layer by using the first alignment center x 0 as an alignment center along the first direction for the alignment prior to the first exposure process, wherein the first device pattern includes a number of parallel first strip lines along the first direction; and
performing a second exposure to define a second device pattern in the photoresist layer by using a point x′=((x 1 +x 2 )/2+x 0 )/2 as the alignment center along the first direction for the alignment prior to the second exposure process, wherein the second device pattern includes a number of parallel second strip lines along the first direction, and the second strip lines are interlaced with the first strip lines.

10. The method according to claim 9 , further including:
removing the photoresist layer except for the first device pattern and the second device pattern to form a patterned photolithography layer; and
using the patterned photolithography layer as a mask to etch the device layer until a surface of the substrate is exposed.

11. The method according to claim 9 , wherein a second alignment center y 0 is obtained based on the fourth grating using grating diffraction, wherein the second alignment center y 0 is used as an alignment center along the second direction for both the first exposure process and the second exposure process.

12. The method according to claim 9 , wherein the photolithography alignment mark structure also includes a seventh grating and an eighth grating in the substrate along the second direction and a ninth grating and a tenth grating on the substrate along the second direction, and the method further includes:
prior to the first exposure process, by using grating diffraction, obtaining a second alignment center y 0 along the second direction based on the fourth grating, a fifth alignment center y 1 along the second direction based on the seventh grating and the ninth grating, and a sixth alignment center y 2 along the second direction based on the eighth grating and the tenth grating;
the second alignment center y 0 is used as an alignment center along the second direction for the alignment prior to the first exposure; and
an alignment center y′=((y 1 +y 2 )/2+y 0 )/2 is used as an alignment center along the second direction for the alignment prior to the second exposure.

Assignees

• Semiconductor Mfg Int Shanghai Corp

Inventors

• Cai Boxiu
• Huang Yi

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10W46/501

  for use before dicing · CPC title

• H10W46/301

  for alignment · CPC title