Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch

Patent metadata

Field	Value
Publication number	US-9620377-B2
Application number	US-201514803578-A
Country	US
Kind code	B2
Filing date	Jul 20, 2015
Priority date	Dec 4, 2014
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.

First claim

What is claimed is:

1. A method of forming an etched feature in a dielectric-containing stack on a semiconductor substrate, the method comprising:
(a) generating a first plasma comprising an etching reactant, exposing the substrate to the first plasma, and partially etching the feature in the dielectric-containing stack;
(b) after (a), depositing a protective film on sidewalls of the feature, wherein the protective film comprises at least a first sub-layer and a second sub-layer, the first and second sub-layers being deposited under different conditions, the protective film comprising a metal, wherein the protective film is deposited along substantially the entire depth of the feature, and wherein the protective film comprises an electrically conductive film; and
(c) repeating (a)-(b) until the feature is etched to a final depth, wherein the protective film deposited in (b) substantially prevents lateral etch of the feature during (a), and wherein the feature has an aspect ratio of about 5 or greater at its final depth.

2. The method of claim 1 , wherein the protective film comprises a metal nitride, a metal carbide, a metal boride, or a combination thereof.

3. The method of claim 1 , wherein the metal in the protective film is selected from the group consisting of titanium, tantalum, ruthenium, aluminum, iron, hafnium, and combinations thereof.

4. The method of claim 3 , wherein the metal in the protective film is provided as a metal nitride, a metal carbide, a metal boride, or a combination thereof.

5. The method of claim 4 , wherein the protective film comprises metal nitride.

6. The method of claim 1 , wherein (b) comprises depositing the protective film through an atomic layer deposition reaction comprising:
(i) exposing the substrate to a first deposition reactant and allowing the first deposition reactant to adsorb onto the sidewalls of the feature; and
(ii) after (i), exposing the substrate to a second deposition reactant and reacting the first and second deposition reactants in a surface reaction, thereby forming the protective film on the sidewalls of the feature.

7. The method of claim 6 , wherein (b) does not involve plasma.

8. The method of claim 6 , wherein (ii) further comprises exposing the substrate to a second plasma comprising the second deposition reactant, wherein exposing the substrate to the second plasma drives a surface reaction between the first deposition reactant and the second deposition reactant, thereby forming the protective film on the sidewalls of the feature.

9. The method of claim 1 , wherein the first and second sub-layers have different compositions.

10. The method of claim 1 , wherein the first sub-layer comprises a metal nitride, a metal oxide, a metal carbide, a metal boride, or a combination thereof, and wherein the second sub-layer comprises metal that is substantially in elemental form.

11. The method of claim 1 , wherein at the final depth, the feature has an aspect ratio of about 20 or greater, and a bow of about 20% or less.

12. The method of claim 1 , wherein the feature is formed while forming a VNAND device, and wherein the dielectric-containing stack comprises alternating layers of (i) an oxide material, and (ii) a nitride material or polysilicon material.

13. The method of claim 1 , wherein the feature is formed while forming a DRAM device, and wherein the dielectric-containing stack comprises layers of silicon oxide and one or more layers of silicon nitride.

14. The method of claim 1 , wherein (b) comprises depositing the protective film through a chemical vapor deposition reaction comprising exposing the substrate to a first deposition reactant and a second deposition reactant simultaneously.

15. The method of claim 1 , wherein (a) and (b) are repeated at least one time.

16. An apparatus for forming an etched feature in a dielectric-containing stack on a semiconductor substrate, the apparatus comprising:
one or more reaction chambers, wherein at least one reaction chamber is designed or configured to perform etching, and wherein at least one reaction chamber is designed or configured to perform deposition, each reaction chamber comprising:
an inlet for introducing process gases to the reaction chamber, and
an outlet for removing material from the reaction chamber, and
a controller having instructions for:
(a) generating a first plasma comprising an etching reactant, exposing the substrate to the first plasma, and partially etching the feature in the dielectric-containing stack, wherein (a) is performed in the reaction chamber designed or configured to perform etching;
(b) after (a), depositing a protective film on sidewalls of the feature, wherein the protective film comprises at least a first sub-layer and a second sub-layer, the first and second sub-layers being deposited under different conditions, wherein the protective film is a metal-containing film deposited along substantially the entire depth of the feature, wherein the protective film comprises an electrically conductive film, and wherein (b) is performed in the reaction chamber designed or configured to perform deposition; and
(c) repeating (a)-(b) until the feature is etched to a final depth, wherein the protective film deposited in (b) substantially prevents lateral etch of the feature during (a), and wherein the feature has an aspect ratio of about 5 or greater at its final depth.

17. The apparatus of claim 16 , wherein the reaction chamber designed or configured to perform etching is the same reaction chamber designed or configured to perform deposition, such that both (a) and (b) occur in the same reaction chamber.

18. The apparatus of claim 16 , wherein the reaction chamber designed or configured to perform etching is different from the reaction chamber designed or configured to perform deposition, and wherein the controller further comprises instructions to transfer the substrate under vacuum conditions between the reaction chamber designed or configured to perform etching and the reaction chamber designed or configured to perform deposition.

19. The apparatus of claim 18 , wherein the controller has instructions to perform (b) by:
(i) depositing a first sub-layer of the protective film on sidewalls of the feature, and
(ii) depositing a second sub-layer of the protective film on the first sub-layer of the protective film, the first and second sub-layers each comprising a metal nitride, metal carbide, metal oxide, metal boride, a metal in substantially elemental form, or some combination thereof.

20. The apparatus of claim 19 , wherein the first sub-layer of the protective film comprises a metal nitride, metal carbide, metal oxide, metal boride, or some combination thereof, and wherein the second sub-layer of the protective film comprises a metal in substantially elemental form.

21. The apparatus of claim 19 , wherein two or more reaction chambers are designed or configured to perform deposition, wherein the controller has instructions to deposit the first sub-layer in a first reaction chamber designed or configured to perform deposition, and to deposit the second sub-layer in a second reaction chamber designed or configured to perform deposition, and to transfer the substrate from the first reaction chamber designed or configured to perform deposition to the second reaction chamber designed or configured to perform deposition.

Assignees

• Lam Res Corp
• Lab Res Corp

Inventors

• Hudson Eric A
• Wilcoxson Mark H
• Pelhos Kalman
• Shin Hyung Joo

Classifications

• C23C16/56

  After-treatment · CPC title

• C23C16/045

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title

• C23C16/38

  Borides · CPC title

• C23C16/40

  Oxides · CPC title

• H01J37/32165

  Plural frequencies · CPC title