Apparatus and methods for injector to substrate gap control

US9617640B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9617640-B2
Application numberUS-201414435070-A
CountryUS
Kind codeB2
Filing dateFeb 20, 2014
Priority dateFeb 21, 2013
Publication dateApr 11, 2017
Grant dateApr 11, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Described are apparatus and methods for processing a semiconductor wafer in which the gap between the wafer surface and the gas distribution assembly remains uniform and of known thickness. The wafer is positioned within a susceptor assembly and the assembly is lifted toward the gas distribution assembly using actuators. The wafer can be lifted toward the gas distribution assembly by creating a fluid bearing below and/or above the wafer.

First claim

Opening claim text (preview).

What is claimed is: 1. A processing chamber comprising: a gas distribution assembly having a front surface; a susceptor assembly below the gas distribution assembly, the susceptor assembly including a top surface, a bottom surface, an inner diameter region and an outer diameter region, the top surface spaced from the front surface of the gas distribution assembly to form a gap, the susceptor assembly including a support post capable of lifting, lowering and rotating the susceptor assembly; and at least one actuator positioned below the susceptor assembly at the outer diameter region to push the susceptor assembly upward toward the gas distribution assembly to change the gap between the gas distribution assembly and the susceptor assembly, each of the at least one actuators includes a bearing on a top of the actuator to contact the bottom surface of the susceptor assembly. 2. The processing chamber of claim 1 , wherein the bearing is one or more of a mechanical type bearing which makes physical contact with the bottom surface of the susceptor assembly or a non-contact fluid type bearing in which only a fluid makes contact with the bottom surface of the susceptor assembly. 3. The processing chamber of claim 2 , wherein the gas distribution assembly further comprises a reference pad opposed to the bearing on the actuator. 4. The processing chamber of claim 3 , further comprising a contact pressure sensor to measure a contact pressure between the susceptor assembly and the gas distribution assembly, the contact pressure sensor located on the gas distribution assembly and in a position corresponding to an actuator, and an optional feedback circuit in communication with the contact pressure sensor and the actuators. 5. The processing chamber of claim 1 , wherein the susceptor assembly further comprises an edge ring about the outer periphery of the susceptor assembly and the actuators and bearings are positioned to contact the edge ring. 6. The processing chamber of claim 5 , wherein the susceptor assembly further comprises a support ring about the inner periphery of the susceptor assembly and, optionally, at least one actuator and bearing positioned to contact the support ring near the inner diameter region. 7. A processing chamber comprising: a gas distribution assembly having a front surface; a susceptor assembly below the gas distribution assembly, the susceptor assembly including a top surface spaced from the front surface of the gas distribution assembly to form a gap, a bottom surface, an inner diameter region and an outer diameter region, the top surface comprising at least one recess to support an edge of a wafer and at least one channel in fluid communication with the recess to provide a flow of gas in a bottom portion of the recess so that when a wafer is in the recess, the flow of gas creates a fluid bearing to push the wafer upward toward the gas distribution assembly, wherein the gas distribution assembly further comprises a channel to direct a flow of gas radially so that when a wafer is present in the recess, the radial flow of gas creates a fluid bearing above the wafer in addition to the fluid bearing below the wafer; and at least one actuator positioned below the susceptor assembly at the outer diameter region to push the susceptor assembly upward toward the gas distribution assembly to change the gap between the gas distribution assembly and the susceptor assembly, each of the at least one actuators includes a bearing on a top of the actuator to contact the bottom surface of the susceptor assembly.

Assignees

Inventors

Classifications

  • characterised by the properties tested or measured, e.g. structural or electrical properties · CPC title

  • deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

  • Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

  • using chemical vapour deposition [CVD] · CPC title

  • for relative movement of the substrate and the gas injectors or half-reaction reactor compartments · CPC title

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What does patent US9617640B2 cover?
Described are apparatus and methods for processing a semiconductor wafer in which the gap between the wafer surface and the gas distribution assembly remains uniform and of known thickness. The wafer is positioned within a susceptor assembly and the assembly is lifted toward the gas distribution assembly using actuators. The wafer can be lifted toward the gas distribution assembly by creating a…
Who is the assignee on this patent?
Yudovsky Joseph, Griffin Kevin, Gangakhedkar Kaushal, and 1 more
What technology area does this patent fall under?
Primary CPC classification C23C16/45551. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 11 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).