Optical material used in light-emitting device, optical isolator, and optical processing apparatus, and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9617470-B2
Application number	US-201314369502-A
Country	US
Kind code	B2
Filing date	Apr 27, 2013
Priority date	May 1, 2012
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

An optical material used in a UV-excited yellow light-emitting material and an optical isolator, capable of emitting yellow light stably and highly efficiently even if a large current is fed to obtain the high luminance emission. The optical material used for the UV-excited yellow light-emitting material ( 2 ) and the optical isolator ( 210 ) is an oxide containing Ce, which is a terbium cerium aluminum garnet type single crystal wherein a part of terbium of a terbium aluminum garnet type single crystal is substituted by cerium. The ratio of number of moles of cerium to the total number of moles of terbium and cerium, namely the composition ratio of cerium, preferably falls within the range from 0.01 mol % to 50 mol %. A part of aluminum may be substituted by scandium or further by any one of terbium, cerium, yttrium, lutetium, ytterbium, and thulium.

First claim

What is claimed is:

1. An optical material, comprising: an oxide containing Ce, wherein the optical material is a cerium-doped terbium scandium aluminum garnet type single crystal;
wherein a part of the terbium of a terbium aluminum garnet type single crystal is substituted by cerium, and
a part of the aluminum of the terbium aluminum garnet type single crystal is substituted by scandium.

2. The optical material as set forth in claim 1 , wherein a ratio of number of moles of cerium to a total number of moles of the terbium and the cerium, namely a composition ratio of the cerium, is 0.01 mol % or higher but not exceeding 50 mol %.

3. The optical material as set forth in claim 1 , wherein a composition ratio of the cerium is 5 mol % or lower.

4. The optical material as set forth in claim 1 , wherein the part of the aluminum or a part of the scandium is substituted by any one of terbium, cerium, yttrium, lutetium, ytterbium, and thulium, or two or more of these elements.

5. The optical material as set forth in claim 4 , wherein the part of the aluminum or the part of the scandium is substituted by a combination of elements exhibiting valences of 2 + and 4 + .

6. The optical material as set forth in claim 1 represented by chemical formula (I) shown below:
((Tb 1-z Ce z ) 1-y L y ) a (M 1-x N x ) b Al c O 12-w   (I)

where: L represents any one of Sc, Y, Lu, Yb, Tm, Mg, Ca, Hf, and Zr, or two or more of these elements; M represents Sc; N represents any one of Tb, Ce, Y, Lu, Yb, Tm, Mg, Ca, Hf, and Zr, or two or more of these elements; and a, b, c, x, y, z, and w satisfy the following conditions (II) to (VIII):
2.5≦ a≦ 3.5  (II)

0≦ b≦ 2.5  (III)

2.5≦ c≦ 5.5  (IV)

0≦ x≦ 1  (V)

0≦ y≦ 0.5  (VI)

0.0001≦ z≦ 0.5  (VII), and

0≦ w≦ 0.5  (VIII).

7. A method of manufacturing an optical material as set forth in claim 1 by a method of single crystal growth from melt, comprising:
heating and dissolving a powder raw material containing terbium oxide, aluminum oxide, scandium oxide and cerium oxide; and
pulling up a seed crystal from an obtained solution, thereby growing a cerium-doped terbium scandium aluminum garnet type single crystal.

8. The method of manufacturing the optical material as set forth in claim 7 , wherein the single crystal is grown so that a composition ratio of cerium to a total number of moles of the terbium and the cerium becomes 5 mol % or lower.

9. A light-emitting device comprising:
a plate material using the optical material as set forth in claim 1 as a UV-excited yellow light-emitting material; and
a UV light-emitting diode having a light-emitting surface, wherein a surface of the plate material and the light-emitting surface are disposed so that they face each other.

10. The light-emitting device as set forth in claim 9 , wherein an emission peak wavelength of the UV light-emitting diode falls within a range from 250 to 425 nm.

11. The light-emitting device as set forth in claim 9 , wherein the UV-excited yellow light-emitting material is disposed, contacting the light-emitting surface of the UV light-emitting diode.

12. The light-emitting device as set forth in claim 9 , wherein the UV-excited yellow light-emitting material is disposed, being apart from the light-emitting surface of the UV light-emitting diode.

13. The light-emitting device as set forth in claim 9 , wherein a UV-excited blue light-emitting material is disposed, in addition to the UV-excited yellow light-emitting material.

14. The light-emitting material as set forth in claim 13 , wherein the UV-excited blue light-emitting material is a Ce:R 2 SiO 5 single crystal in which R represents any one, or two or more, of elements selected from Lu, Y, and Gd.

15. An optical isolator comprising: the optical material as set forth in claim 1 , wherein the optical isolator is a polarization dependent type or a polarization independent type.

16. The optical isolator as set forth in claim 15 , wherein the optical isolator is the polarization independent type.

17. An optical processing apparatus comprising: the optical isolator as set for in claim 15 ; and a laser light source, wherein the optical isolator is disposed on a light path of a laser light emitted from the laser light source.

18. The optical processing apparatus as set forth in claim 17 , wherein an oscillation wavelength of the laser light source is 1080 nm.

Assignees

• Nat Inst For Materials Science

Inventors

• Shimamura Kiyoshi
• Garcia Villora Encarnacion Antonia

Classifications

• H10W72/07554

  changes in dispositions · CPC title

• H10W72/547

  Dispositions of multiple bond wires · CPC title

• H10W72/20

  Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps · CPC title

• C09K11/7774 Primary

  Aluminates · CPC title

• H01L2924/00014

  Electricity · mapped topic