Polishing composition and method utilizing abrasive particles treated with an aminosilane

Patent metadata

Field	Value
Publication number	US-9617450-B2
Application number	US-201514657594-A
Country	US
Kind code	B2
Filing date	Mar 13, 2015
Priority date	Sep 21, 2007
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

First claim

The invention claimed is:

1. A chemical-mechanical polishing composition for polishing a substrate comprising:
(i) a liquid carrier,
(ii) an abrasive suspended in the liquid carrier, wherein the abrasive comprises colloidal silica particles having a surface which has been treated with a compound selected from the group consisting of an aminosilane compound, a phosphononiumsilane compound, and a sulfonium silane compound, wherein the treated particles have a zeta potential of about 10 mV or more, and wherein the treated particles have a surface coverage of the available silanols of about 2% to about 50%, and
(iii) a phosphonic acid wherein the phosphonic acid is selected from the group consisting of amino tri(methylene phosphonic acid) and 1-hydroxyethylidene-1,1-diphosphonic acid, and
wherein the polishing composition has a pH of about 1.5 to about 5.

2. The polishing composition of claim 1 wherein the surface of the abrasive has been treated with an aminosilane compound that contains an aminopropyl group.

3. A chemical-mechanical polishing composition for polishing a substrate comprising:
(i) a liquid carrier,
(ii) an abrasive suspended in the liquid carrier, wherein the abrasive comprises metal oxide particles having a surface which has been treated with a compound selected from the group consisting of quaternary aminosilane compounds, dipodal aminosilane compounds, and combinations thereof, and wherein the treated particles have a surface coverage of the available silanols of about 2% to about 50%, and
(iii) an oxidizing agent, and
(iv) a corrosion inhibitor,
wherein the polishing composition has a pH of about 1.5 to about 5.

4. The polishing composition of claim 3 , wherein the abrasive is colloidal silica.

5. The polishing composition of claim 3 , wherein the polishing composition has a conductivity of about 1500 μS/cm or less.

Assignees

• Cabot Microelectronics Corp

Inventors

• Grumbine Steven
• Li Shoutian
• Ward William
• Singh Pankaj
• Dysard Jeffrey

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title