Apparatus and method for fabricating nano resonator using laser interference lithography

Patent metadata

Field	Value
Publication number	US-9617146-B2
Application number	US-201314094178-A
Country	US
Kind code	B2
Filing date	Dec 2, 2013
Priority date	Jan 9, 2013
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

A method of fabricating a nano resonator, includes forming a line pattern in a first substrate, and transferring the line pattern to a second substrate including a gate electrode. The method further includes forming a source electrode and a drain electrode on the transferred line pattern.

First claim

What is claimed is:

1. An RF nano resonator, comprising:
a gate electrode and at least one support formed on a target substrate, and
a planar member including a line pattern comprising a plurality of nano lines, the planar member formed over the at least one support and the gate electrode and connecting a source electrode to a drain electrode disposed over the planar member,
wherein the line pattern is obtained by forming nano lines on a transfer substrate using laser interference lithography and is transferred from the transfer substrate to the target substrate to be positioned over the gate electrode,
wherein the source electrode is formed on a side portion of an upper surface of the line pattern after the line pattern is transferred from the transfer substrate to the target substrate, and the drain electrode is formed on an opposite side portion of the upper surface of the line pattern after the line pattern is transferred from the transfer substrate to the target substrate.

2. The RF nano resonator of claim 1 ,
wherein the at least one support comprises:
a source support formed on the target substrate, a side portion of the planar member including the line pattern being formed on the source support; and
a drain support formed on the target substrate, an opposite side portion of the planar member including the line pattern being formed on the drain support,
wherein the source and drain supports are higher than the gate electrode to separate the line pattern therefrom by a predetermined distance.

3. The RF nano resonator of claim 1 , wherein the line pattern is formed by forming a photoresist layer on the transfer substrate, and etching the transfer substrate to remove a portion thereof, on which a line patter array is absent, to form the line pattern.

4. The RF nano resonator of claim 3 , wherein the line pattern array is formed by exposing, to a laser radiation, a portion of the photoresist layer that corresponds to a spacing between the to be formed nano lines of the line patter to remove this portion of the photoresist layer.

5. The RF nano resonator of claim 1 , wherein the planar member including the line pattern is separated from the transfer substrate using a polydimethylsiloxane (PDMS) stamp and transferred to the PDMS stamp, and
wherein the separated line pattern is transferred from the PDMS stamp to the target substrate.

6. An RF nano device, comprising:
a nano resonator comprising:
a gate electrode and at least one support formed on a target substrate, and
a planar member including a line pattern comprising a plurality of nano lines, the planar member formed over the at least one support and the gate electrode and connecting a source electrode to a drain electrode disposed over the planar member,
wherein the line pattern is obtained by forming nano lines on a transfer substrate using laser interference lithography and is transferred from the transfer substrate to the target substrate i to be positioned above the gate electrode,
wherein the source electrode is formed on a side portion of an upper surface of the line pattern after the line pattern is transferred from the transfer substrate to the target substrate, and the drain electrode is formed on an opposite side portion of the upper surface of the line pattern after the line pattern is transferred from the transfer substrate to the target substrate.

Assignees

• Samsung Electronics Co Ltd
• Korea Univ Ind & Acad Collaboration Found

Inventors

• Kim Duck Hwan
• Song In Sang
• Shin Jea Shik
• Park Ho Soo
• Rieh Jae-Sung
• Ju Byeong Kwon

Classifications

• B81B3/0021

  Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00) · CPC title

• B81B3/0018

  Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators · CPC title

• H03H3/0072 Primary

  of microelectro-mechanical resonators or networks (micromembranes or microbeams B81B2203/01; manufacture of microstructural devices in general B81C) · CPC title

• B81C1/0019 Primary

  Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182 · CPC title

• H01P7/00 Primary

  Resonators of the waveguide type · CPC title