Integrated microelectromechanical system devices and methods for making the same

Patent metadata

Field	Value
Publication number	US-9172352-B2
Application number	US-201313970120-A
Country	US
Kind code	B2
Filing date	Aug 19, 2013
Priority date	Aug 19, 2013
Publication date	Oct 27, 2015
Grant date	Oct 27, 2015

Abstract

Integrated Microelectromechanical System (“MEMS”) devices and methods for making the same. The integrated MEMS device comprises a substrate ( 200 ) with first electronic circuitry ( 206 ) formed thereon, as well as a MEMS filter device ( 100 ). The MEMS filter device has a transition portion ( 118 ) configured to (a) electrically connect the MEMS filter device to second electronic circuitry and (b) suspend the MEMS filter device over the substrate such that a gas gap exists between the substrate and the MEMS filter device. The transition portion comprises a three dimensional hollow ground structure ( 120 ) in which an elongate center conductor ( 122 ) is suspended. The RF MEMS filter device also comprises at least two adjacent electronic elements ( 102/110 ) which are electrically isolated from each other via a ground structure of the transition portion, and placed in close proximity to each other.

First claim

We claim:

1. An integrated Microelectromechanical Systems (“MEMS”) device, comprising:
a substrate;
a transition portion connected to and at least partially extending transversely away from a major surface of the substrate, said transition portion comprising a hollow structure in which an elongate conductor is suspended;
a MEMS filter device (a) mechanically suspended above the major surface of the substrate exclusively by the transition portion, and (b) electrically connected to first electronic circuitry external thereto by the transition portion; and
a gas gap between the major surface of the substrate and the MEMS filter device.

2. The integrated MEMS device according to claim 1 , further comprising second electronic circuitry formed on the major surface of the substrate so as to reside between the substrate and the MEMS filter device, wherein a gas gap exists between the second electronic circuitry and the MEMS filter device.

3. An integrated Microelectromechanical Systems (“MEMS”) device, comprising:
a substrate;
a transition portion connected to and at least partially extending transversely away from a major surface of the substrate;
a MEMS filter device (a) mechanically suspended above the major surface of the substrate exclusively by the transition portion, and (b) electrically connected to first electronic circuitry external thereto by the transition portion;
a gas gap between the major surface of the substrate and the MEMS filter device; and
second electronic circuitry is formed on the major surface of the substrate so as to reside between the substrate and the MEMS filter device, wherein a gas gap exists between the second electrical circuitry and the MEMS filter device;
wherein a first conductive material used to fabricate the MEMS filter device has a first melting point that is different from second melting points of all second conductive materials used to form the second electronic circuitry by no more than 100° C.

4. An integrated Microelectromechanical Systems (“MEMS”) device, comprising:
a substrate;
a transition portion connected to and at least partially extending transversely away from a major surface of the substrate;
a MEMS filter device (a) mechanically suspended above the major surface of the substrate exclusively by the transition portion, and (b) electrically connected to first electronic circuitry external thereto by the transition portion;
a gas gap between the major surface of the substrate and the MEMS filter device; and
second electronic circuitry is formed on the major surface of the substrate so as to reside between the substrate and the MEMS filter device, wherein a gas gap exists between the second electrical circuitry and the MEMS filter device;
wherein an isolation between the MEMS filter device and the second electronic circuitry is less than forty decibels.

5. An integrated Microelectromechanical Systems (“MEMS”) device, comprising:
a substrate;
a transition portion connected to and at least partially extending transversely away from a major surface of the substrate;
a MEMS filter device (a) mechanically suspended above the major surface of the substrate exclusively by the transition portion, and (b) electrically connected to first electronic circuitry external thereto by the transition portion; and
a gas gap between the major surface of the substrate and the MEMS filter device;
wherein the transition portion comprises a three dimensional hollow ground structure in which an elongate center conductor is suspended.

6. The integrated MEMS device according to claim 5 , further comprising a dielectric strap connected between two opposing sidewalls of the transition portion so as to suspend the elongate center conductor within the three dimensional hollow ground structure.

7. The integrated MEMS device according to claim 5 , wherein the elongate center conductor is separated from the three dimensional hollow ground structure via a gas gap on all sides thereof.

8. An integrated Microelectromechanical Systems (“MEMS”) device, comprising:
a substrate;
a transition portion connected to and at least partially extending transversely away from a major surface of the substrate;
a MEMS filter device (a) mechanically suspended above the major surface of the substrate exclusively by the transition portion, and (b) electrically connected to first electronic circuitry external thereto by the transition portion; and
a gas gap between the major surface of the substrate and the MEMS filter device;
wherein the RF MEMS filter device comprises at least two adjacent electronic elements which are electrically isolated from each other via a ground structure of the transition portion.

9. The integrated MEMS device according to claim 8 , wherein the adjacent electronic elements are electrically isolated from each other on one side via two spaced apart sidewalls of the ground structure of the transition portion.

10. The integrated MEMS device according to claim 8 , wherein the adjacent electronic elements are electrically isolated from each other on one side via a common sidewall of the ground structure of the transition portion.

11. The integrated MEMS device according to claim 10 , wherein the common sidewall has a thickness that is greater than at least one other adjoining sidewall of the ground structure.

Assignees

• Harris Corp

Inventors

• Rogers John E

Classifications

• H03H9/505

  for microelectro-mechanical filters · CPC title

• H03H7/0115 Primary

  comprising only inductors and capacitors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence) · CPC title

• H03H2007/006

  MEMS · CPC title

• H03H3/0073

  Integration with other electronic structures · CPC title

• H03H9/465

  in combination with other electronic elements · CPC title