Method for making epitaxial structure

Patent metadata

Field	Value
Publication number	US-9613802-B2
Application number	US-201213593602-A
Country	US
Kind code	B2
Filing date	Aug 24, 2012
Priority date	Mar 28, 2012
Publication date	Apr 4, 2017
Grant date	Apr 4, 2017

Abstract

A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are removed to expose a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.

First claim

What is claimed is:

1. A method for making epitaxial structure, the method comprising:
epitaxially growing a buffer layer on a first epitaxial growth surface of a substrate;
directly placing a carbon nanotube layer on the buffer layer, wherein the carbon nanotube layer is a free-standing and continuous structure, and comprises a plurality of carbon nanotubes parallel to a surface of the carbon nanotube layer; the carbon nanotube layer defines a plurality of apertures, and a size of each of the plurality of apertures is range from 10 nanometers to 1 micrometer; a thickness of the carbon nanotube layer range from 1 nanometer to 10 nanometers;
epitaxially growing a first epitaxial layer on the buffer layer and the carbon nanotube layer, wherein the first epitaxial layer comprises a first surface and a second surface opposite to the first surface and defines a plurality of grooves on the second surface, the plurality of carbon nanotubes are enclosed into the plurality of grooves;
forming a second epitaxial growth surface by removing the substrate and the buffer layer, wherein the carbon nanotube layer is attached on the second surface of the first epitaxial layer after removing the substrate and the buffer layer, and the second surface is used as the second epitaxial growth surface; and
growing a second epitaxial layer on the second epitaxial growth surface so that the carbon nanotube layer is sandwiched between the first epitaxial layer and the second epitaxial layer.

2. The method of claim 1 , wherein the first epitaxial layer is grown on a part of the buffer layer which is exposed and through the plurality of apertures.

3. The method of claim 2 , wherein the step of epitaxially growing the first epitaxial layer on the first epitaxial growth surface comprises:
nucleating and growing a plurality of epitaxial crystal grains on the part of the buffer layer along a direction substantially perpendicular to the buffer layer;
forming a continuous epitaxial film by growing the plurality of epitaxial crystal grains along a direction substantially parallel to the buffer layer; and
forming the first epitaxial layer by growing the epitaxial film along the direction substantially perpendicular to the buffer layer.

4. The method of claim 3 , wherein the plurality of epitaxial crystal grains are grown through the plurality of apertures to form a plurality of grooves such that the plurality of grooves enclose the carbon nanotube layer and that the first epitaxial layer defines a patterned depression on an interface between the buffer layer and the first epitaxial layer.

5. The method of claim 4 , wherein the carbon nanotube layer comprises a layer of carbon nanotube wires substantially parallel spaced, and the patterned depression comprises a plurality of substantially parallel spaced grooves.

6. The method of claim 4 , wherein the carbon nanotube layer comprises a plurality of carbon nanotube wires crossed or weaved together to form a carbon nanotube net, and the patterned depression comprises a groove network comprising a plurality of intersected grooves.

7. The method of claim 1 , wherein the carbon nanotube layer comprises a plurality of carbon nanotubes extending along a direction substantially parallel to the epitaxial growth surface.

8. The method of claim 1 , wherein the carbon nanotube layer comprises a plurality of carbon nanotubes extending along a crystallographic orientation of the substrate.

9. The method of claim 1 , wherein the substrate and the buffer layer is removed by laser irradiation, corrosion, or thermal expansion and contraction.

10. The method of claim 1 , further comprising a step of placing a second carbon nanotube layer on the second growth surface before growing the second epitaxial layer.

11. The method of claim 1 , wherein the second epitaxial surface forms a patterned surface, and the second epitaxial layer covers the carbon nanotube layer.

12. The method of claim 1 , wherein the carbon nanotube layer further comprises a plurality of non-carbon nanotube materials coated on the plurality of carbon nanotubes.

13. A method for making epitaxial structure, the method comprising:
epitaxially growing a buffer layer on a first epitaxial growth surface of a substrate;
placing a carbon nanotube layer on the buffer layer, wherein the carbon nanotube layer is a continuous and free-standing structure, and comprises a plurality of carbon nanotubes, and the plurality of carbon nanotubes defines a plurality of apertures; a size of each of the plurality of apertures is range from 10 nanometers to 1 micrometer;
epitaxially growing a first epitaxial layer on the buffer layer and the carbon nanotube layer, wherein the first epitaxial layer penetrates the carbon nanotube layer through the plurality of apertures, the first epitaxial layer comprises a first surface and a second surface opposite to the first surface and defines a plurality of grooves on the second surface, each of the plurality of grooves is defined by an inner wall, each of the plurality of carbon nanotubes is enclosed into one of the plurality of grooves and spaced from the inner wall;
forming a second epitaxial growth surface by removing the substrate and the buffer layer, wherein the carbon nanotube layer is attached on the second surface of the first epitaxial layer after removing the substrate and the buffer layer, and the second surface is used as the second epitaxial growth surface; and
growing a second epitaxial layer on the second epitaxial growth surface so that the carbon nanotube layer is sandwiched between the first epitaxial layer and the second epitaxial layer;
wherein the second epitaxial layer is different from the first epitaxial layer.

14. A method for making epitaxial structure, the method comprising:
epitaxially growing a buffer layer on a first epitaxial growth surface of a substrate;
placing a carbon nanotube layer on the buffer layer, wherein the carbon nanotube layer is a continuous and free-standing structure, and comprises a plurality of carbon nanotubes, and the plurality of carbon nanotubes defines a plurality of apertures;
epitaxially growing a first epitaxial layer on the buffer layer and the carbon nanotube layer, wherein the first epitaxial layer comprises a first surface and a second surface opposite to the first surface and defines a plurality of grooves on the second surface, each of the plurality of carbon nanotubes is enclosed into one of the plurality of grooves;
removing the substrate and the buffer layer, wherein the carbon nanotube layer is attached on the second surface of the first epitaxial layer after removing the substrate and the buffer layer; and
growing a second epitaxial layer on the second surface so that the carbon nanotube layer is sandwiched between the first epitaxial layer and the second epitaxial layer.

Assignees

• Wei Yang
• Fan Shou-Shan
• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Wei Yang
• Fan Shou-Shan

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/3202 Primary

  Materials thereof · CPC title

• H10P14/2901

  Materials · CPC title