Tsv wafer with improved fracture strength

Patent metadata

Field	Value
Publication number	US-9607929-B2
Application number	US-201514825778-A
Country	US
Kind code	B2
Filing date	Aug 13, 2015
Priority date	Mar 4, 2014
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.

First claim

What is claimed is:

1. A structure comprising:
a substrate having a front side and a back side;
semiconductor devices on said front side of said substrate;
a through-substrate via extending through said substrate from said front side of said substrate to said back side of said substrate; and
a backfill region adjacent to said through-substrate via and extending from said back side of said substrate to a depth within said substrate such that a portion of said substrate is between said backfill region and said through-substrate via,
said depth of said backfill region being no more than approximately 50% of a thickness of said substrate,
said portion of said substrate being in direct contact with and laterally surrounding a vertical sidewall of said through-substrate via,
said backfill region comprising an alternate material having a lower modulus of elasticity than said substrate,
said alternate material extending laterally between adjacent ones of said portion that laterally surround adjacent through-substrate vias,
said alternate material being at least as thermally conductive as said substrate, and
an exposed surface of said alternate material is essentially co-planar with said back side of said substrate.

2. The structure of claim 1 , said alternate material comprising a polycrystalline material or an amorphous material.

3. The structure of claim 1 ,
said portion of said substrate extending laterally from said vertical sidewall of said through-substrate via by a distance not less than a diameter or a width of said through-substrate via.

4. The structure of claim 1 , further comprising:
a metal contact on said back side of said substrate in direct contact with said through-substrate via.

5. A structure comprising:
a substrate having a front side and a back side;
semiconductor devices on said front side of said substrate;
said substrate having said front side and said back side, said substrate comprising a dielectric material;
a semiconductor device formed on said front side of said substrate; and
a through-substrate via extending through said substrate from said back side of said substrate to said front side of said substrate, said through-substrate via contacting said semiconductor device,
said substrate comprising a backfill region adjacent to said through-substrate via and extending from said back side of said substrate to a depth within said substrate, said depth being less than or equal to approximately 50% of a thickness of said substrate,
a portion of said substrate being between said backfill region and said through-substrate via, said portion of said substrate being in direct contact with and laterally surrounding a vertical sidewall of said through-substrate via,
said backfill region comprising an alternate material having a lower modulus of elasticity than said substrate,
said alternate material extending laterally between adjacent ones of said portion that laterally surround adjacent through-substrate vias,
said alternate material being at least as thermally conductive as said substrate, and
an exposed surface of said alternate material is essentially co-planar with said back side of said substrate.

6. The structure of claim 5 , said alternate material having a lower modulus of elasticity than said substrate.

7. The structure of claim 6 , said alternate material comprising a polycrystalline material or an amorphous material.

8. The structure of claim 5 ,
said through-substrate via having a height or a depth ranging from approximately 10 to approximately 50 times larger than its width.

9. The structure of claim 5 ,
said portion of said substrate extending laterally from said vertical sidewall of said through-substrate via by a distance greater than or equal to a diameter or a width of said through-substrate via.

10. The structure of claim 5 , said through-substrate via comprising a conductive material.

11. The structure of claim 5 , said through-substrate via further comprising a barrier lining around said through-substrate via.

12. The structure of claim 5 , further comprising:
a metal contact on said back side of said substrate in direct contact with said through-substrate via.

13. A through-substrate via comprising:
a substrate having a front side and a back side;
semiconductor devices on said front side of said substrate;
a conductive material extending from said back side of said substrate to said front side of said substrate, said substrate comprising a dielectric material;
a barrier lining surrounding said conductive material; and
a metal contact on said back side of said substrate in direct contact with said conductive material,
said substrate comprising a backfill region adjacent to said conductive material and extending from said back side of said substrate to a depth within said substrate, said depth being less than or equal to approximately 50% of a thickness of said substrate,
a portion of said substrate being between said backfill region and said conductive material and in direct contact with said conductive material,
said backfill region comprising an alternate material having a lower modulus of elasticity than said substrate,
said alternate material extending laterally between adjacent ones of said portion that laterally surround adjacent through-substrate vias,
said alternate material being at least as thermally conductive as said substrate, and
an exposed surface of the alternate material is essentially co-planar with said back side of the substrate.

14. The through-substrate via of claim 13 , said alternate material having a lower modulus of elasticity than said substrate, and
said alternate material being at least as thermally conductive as said substrate.

15. The through-substrate via of claim 13 ,
said portion of said substrate extending laterally from a vertical sidewall of said conductive material by a distance greater than or equal to a diameter or a width of said conductive material.

16. The through-substrate via of claim 13 , said conductive material having a cross sectional shape selected from the group consisting of:
annulus, rectangle, rounded rectangle, square, rounded square, and circle.

Assignees

• IBM

Inventors

• Adkisson James W
• Amoah Yoba
• Gambino Jeffrey P
• Leggett Christine A
• Lifson Max L
• Musante Charles F
• Samala Sruthi
• Thomas David C

Classifications

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H10W20/2125

  Top-view shapes · CPC title

• H10W20/217

  comprising ring-shaped isolation structures outside of the via holes · CPC title

• H10W42/121

  protecting against mechanical damage (H10W76/00, H10W74/00 take precedence) · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title