Methods of modeling and monitoring leaching behavior of polycrystalline diamond and methods of leaching polycrystalline diamond

Patent metadata

Field	Value
Publication number	US-9606091-B2
Application number	US-201314011471-A
Country	US
Kind code	B2
Filing date	Aug 27, 2013
Priority date	Aug 29, 2012
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

Embodiments of the invention relate to methods of modeling leaching behavior of a polycrystalline diamond (“PCD”) material used in leached polycrystalline diamond compacts (“PDCs”) and methods of monitoring leaching of a PCD material. In an embodiment, a method of modeling leaching behavior is disclosed. A PCD table is provided, which includes a plurality of bonded diamond grains defining a plurality of interstitial regions in which a metallic material is disposed. The PCD table is leached with a leaching agent to at least partially remove the metallic material from the PCD table. A leach depth of the PCD table is determined. A concentration of at least one constituent of the leaching agent is also determined. The leach depth is correlated with the concentration of the at least one metal to generate the model of leaching behavior.

First claim

The invention claimed is:

1. A method of leaching polycrystalline diamond, comprising:
providing a polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions in which a metallic material is disposed;
positioning the polycrystalline diamond table in contact with a leaching agent to at least partially remove the metallic material from the polycrystalline diamond table;
periodically or substantially continuously measuring a concentration of at least one constituent of the leaching agent during the act of leaching;
determining a leach depth of the polycrystalline diamond table at least partially based on the measured concentration of the at least one constituent of the leaching agent; and
leaching the polycrystalline diamond table to a selected depth at least partially based on the measured concentration of the at least one constituent of the leaching agent.

2. The method of claim 1 wherein measuring a concentration of at least one constituent of the leaching agent includes periodically measuring the concentration.

3. The method of claim 1 wherein periodically or substantially continuously measuring a concentration of at least one constituent of the leaching agent includes substantially continuously measuring the concentration in situ during the act of leaching.

4. The method of claim 1 wherein measuring a concentration of at least one constituent of the leaching agent includes measuring the concentration with a spectrometer configured to provide substantially continuous measurement of the concentration of the at least one metal in the leaching agent.

5. The method of claim 1 wherein measuring a concentration of at least one constituent of the leaching agent includes measuring the concentration by at least one of inductively coupled plasma spectroscopy, inductively coupled plasma atomic mass spectrometry, or inductively coupled plasma emission spectroscopy.

6. The method of claim 1 wherein measuring a concentration of at least one constituent of the leaching agent includes:
removing a sample of the leaching agent; and
measuring the concentration of the at least one metal in the sample.

7. The method of claim 1 wherein measuring a concentration of at least one constituent of the leaching agent includes measuring the concentration at least once every about 2 hours for about 24 hours.

8. The method of claim 1 wherein measuring a concentration of at least one constituent of the leaching agent includes measuring the concentration at least once every about 4 hours for about 24 hours.

9. The method of claim 1 wherein measuring a concentration of at least one constituent of the leaching agent includes measuring the concentration over a period of up to about 7 days.

10. The method of claim 1 wherein the leach depth is less than about 1000 μm.

11. The method of claim 1 wherein the leach depth is about 50 μm to about 100 μm.

12. The method of claim 1 wherein the at least one constituent includes the metallic material.

13. The method of claim 1 wherein the metallic material includes at least one of a metal-solvent catalyst or a metallic infiltrant.

14. The method of claim 1 wherein the polycrystalline diamond table is bonded to a substrate prior to the act of leaching.

15. A method of modeling leaching behavior, comprising:
providing a first polycrystalline diamond table including a first plurality of bonded diamond grains defining a plurality of interstitial regions in which a metallic material is disposed;
positioning the first polycrystalline diamond table in contact with a first leaching agent to at least partially remove the metallic material from the polycrystalline diamond table;
analyzing the first leaching agent to determine a concentration of at least one metal from the metallic material present in the leaching agent at selected time intervals;
determining a leach depth of the first polycrystalline diamond table at each of the selected time intervals;
correlating the determined leach depth and the determined concentration at each of the corresponding ones of the selected time intervals to generate a model of leaching behavior for the polycrystalline diamond table;
positioning a second polycrystalline diamond table at least partially in a second leaching agent;
determining a leach depth of the second diamond table at least partially based on the model of leaching behavior; and
leaching the second polycrystalline diamond table to a selected depth at least partially based on the determined leach depth.

16. The method of claim 15 wherein the selected time intervals are at least once every about 4 hours for about 24 hours.

17. The method of claim 15 wherein the selected time intervals are at least once every about 4 hours for about 24 hours, followed by once about every 24 hours for a period of up to about 7 days.

18. The method of claim 15 wherein the leach depth is less than about 1000 μm.

19. The method of claim 15 wherein the metallic material includes at least one of a metal-solvent catalyst or a metallic infiltrant.

20. The method of claim 15 , wherein determining a leach depth of the first polycrystalline diamond table includes exposing the polycrystalline diamond table to radiation.

21. A method of monitoring leaching, comprising:
positioning a polycrystalline diamond table in a leaching agent to at least partially remove metallic material from the polycrystalline diamond table, wherein the polycrystalline diamond table includes a plurality of bonded diamond grains defining a plurality of interstitial regions in which the metallic material is disposed;
measuring a concentration of at least one constituent of the leaching agent;
predicting a leach depth in the polycrystalline diamond table at least partially based on the measured concentration; and
leaching the polycrystalline diamond table to a selected depth at least partially based on the predicted leach depth.

22. The method of claim 21 wherein measuring a concentration of the at least one constituent of the leaching agent includes periodically measuring the concentration.

23. The method of claim 21 wherein measuring a concentration of at least one constituent of the leaching agent includes substantially continuously measuring the concentration in situ during the act of leaching.

24. The method of claim 21 wherein measuring a concentration of at least one constituent of the leaching agent includes measuring the concentration by at least one technique selected from the group consisting of inductively coupled plasma spectroscopy, inductively coupled plasma atomic mass spectrometry, and inductively coupled plasma emission spectroscopy.

25. The method of claim 21 , further comprising modifying the leaching process responsive to the act of predicting.

26. The method of claim 21 wherein the metallic material includes at least one of a metal-solvent catalyst or a metallic infiltrant.

Assignees

• Us Synthetic Corp

Inventors

• Kidd Julie Ann
• Vail Michael A

Classifications

• B01J2203/0685

  Crystal sintering · CPC title

• G01N33/00 Primary

  Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00 · CPC title

• B01J2203/0655

  Diamond · CPC title

• G06F19/70

  Physics · mapped topic

• B01J3/062

  characterised by the composition of the materials to be processed · CPC title