Sputtering target for magnetic recording film and process for production thereof

Patent metadata

Field	Value
Publication number	US-9605339-B2
Application number	US-201113990109-A
Country	US
Kind code	B2
Filing date	Oct 19, 2011
Priority date	Dec 21, 2010
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

A sputtering target for a magnetic recording film containing SiO 2 , wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.

First claim

The invention claimed is:

1. A sputtering target for a magnetic recording film containing SiO 2 , wherein a peak strength ratio of a (011) plane of quartz relative to a background strength in an X-ray diffraction is 1.40 or more.

2. The sputtering target for a magnetic recording film according to claim 1 , wherein the sputtering target for a magnetic recording film contains Cr in an amount of 20 mol % or less (excluding 0 mol %), SiO 2 in an amount of 1 mol % or more and 20 mol % or less, and remainder being Co.

3. The sputtering target for a magnetic recording film according to claim 1 , wherein the sputtering target for a magnetic recording film contains Cr in an amount of 20 mol % or less (excluding 0 mol %), Pt in an amount of 1 mol % or more and 30 mol % or less, SiO 2 in an amount of 1 mol % or more and 20 mol % or less, and remainder being Co.

4. The sputtering target for a magnetic recording film according to claim 1 , wherein the sputtering target for a magnetic recording film contains Pt in an amount of 5 mol % or more and 60 mol % or less, SiO 2 in an amount of 20 mol % or less, and remainder being Fe.

5. The sputtering target for a magnetic recording film according to claim 1 , wherein the sputtering target for a magnetic recording film contains Pt in an amount of 5 mol % or more and 60 mol % or less, SiO 2 in an amount of 20 mol % or less, and remainder being Co.

6. The sputtering target for a magnetic recording film according to claim 5 , additionally containing, as an additive element, one or more elements selected from B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W in an amount of 0.5 mol % or more and 10 mol % or less.

7. The sputtering target for a magnetic recording film according to claim 5 , additionally containing, as an additive material, an inorganic material of one or more components selected from carbon, oxide excluding SiO 2 , nitride, and carbide.

8. The sputtering target according to claim 4 , containing an additive element selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W in an amount of 0.5 to 10 mol %.

9. The sputtering target according to claim 4 , containing an additive inorganic material selected from the group consisting of carbon, oxide excluding SiO 2 , nitride, and carbide.

10. The sputtering target according to claim 3 , containing an additive element selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W in an amount of 0.5 to 10 mol %.

11. The sputtering target according to claim 3 , containing an additive inorganic material selected from the group consisting of carbon, oxide excluding SiO 2 , nitride, and carbide.

12. The sputtering target according to claim 2 , containing an additive element selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W in an amount of 0.5 to 10 mol %.

13. The sputtering target according to claim 2 , containing an additive inorganic material selected from the group consisting of carbon, oxide excluding SiO 2 , nitride, and carbide.

14. The sputtering target according to claim 1 , containing an additive element selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W in an amount of 0.5 to 10 mol %.

15. The sputtering target according to claim 1 , containing an additive inorganic material selected from the group consisting of carbon, oxide excluding SiO 2 , nitride, and carbide.

16. A method of producing a sputtering target for a magnetic recording film, comprising the steps of using quartz as a powder raw material of SiO 2 , mixing the quartz powder raw material and magnetic metal powder raw material to form a powder mixture, and sintering the powder mixture at a temperature of 1300° C. or less to produce a sputtering target having a peak strength ratio of a (011) plane of quartz relative to a background strength in X-ray diffraction of 1.40 or more.

17. The method according to claim 16 , wherein the sputtering target contains Cr in an amount that is greater than 0 mol % and equal to or less than 20 mol %, SiO 2 in an amount of 1 to 20 mol %, and Co.

18. The method according to claim 16 , wherein the sputtering target contains Cr in an amount that is greater than 0 mol % and equal to or less than 20 mol %, Pt in an amount of 1 to 30 mol %, SiO 2 in an amount of 1 to 20 mol %, and Co.

19. The method according to claim 16 , wherein the sputtering target contains Pt in an amount of 5 to 60 mol %, SiO 2 in an amount of 20 mol % or less, and Fe.

20. The method according to claim 16 , wherein the sputtering target contains Pt in an amount of 5 to 60 mol %, SiO 2 in an amount of 20 mol % or less, and Co.

Assignees

• Ogino Shin-Ichi
• Nara Atsushi
• Takami Hideo
• Jx Nippon Mining & Metals Corp

Inventors

• Ogino Shin-Ichi
• Nara Atsushi
• Takami Hideo

Classifications

• B22F3/14

  simultaneously · CPC title

• C22C33/0292

  with more than 5% preformed carbides, nitrides or borides · CPC title

• H01F41/183

  Sputtering targets therefor · CPC title

• G11B5/851

  Coating a support with a magnetic layer by sputtering · CPC title

• C22C2202/02

  Magnetic · CPC title