Silk electronic components

Patent metadata

Field	Value
Publication number	US-9603243-B2
Application number	US-201113641000-A
Country	US
Kind code	B2
Filing date	Apr 12, 2011
Priority date	Apr 12, 2010
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

The invention relates to silk electronic components and methods for fabricating the same. The silk electronic components can be used as novel devices, such as implantable bioelectric and/or biophotonic devices, biosensors, surveillance devices, invisible cloaks, electromagnetic concentrators or antennas.

First claim

We claim:

1. A silk electronic component comprising:
a silk matrix; and
a plurality of conductive metamaterial elements that are coupled to the silk matrix,
wherein elements of the plurality of conductive metamaterial elements are arranged in an array to form at least one patterned structure, and
wherein at least one dimension of the structure is smaller than a wavelength of incident electromagnetic radiation so that, when the silk electronic component is exposed to the electromagnetic radiation, the radiation is modulated such that the silk electronic component exhibits a subwavelength resonant electromagnetic response.

2. The silk electronic component of claim 1 , wherein the silk matrix has a surface roughness of less than 5 nm.

3. The silk electronic component of claim 1 , wherein the silk matrix comprises silk fibroin.

4. The silk electronic component of claim 1 , wherein the silk matrix is a film, hydrogel, foam, e-gel or microsphere.

5. The silk electronic component of claim 1 , wherein the silk matrix comprises a dopant.

6. The silk electronic component of claim 5 , wherein the dopant is a pharmaceutical, antibody, fragment or portion of an antibody, antibiotic, enzyme, organic indicator, photoactive dye, cell, protein, peptide, nucleic acid analogue, nucleotide, oligonucleotide, peptide nucleic acid, aptamer, hormone, hormone antagonist, growth factor, fragment of a growth factor, variant of a growth factor, recombinant growth factor, fragment of a recombinant growth factor, variant of a recombinant growth factor, cytokine, antimicrobial compound, virus, antiviral, toxin, prodrug, drug, chemotherapeutic agent, small molecule, chromophore, light-emitting organic compound, light-emitting inorganic compounds, light-harvesting compound, light-capturing complex, or combinations thereof.

7. The silk electronic component of claim 5 , wherein the dopant modulates the electromagnetic radiation.

8. The silk electronic component of claim 1 , wherein the silk matrix conforms to a surface upon contact with the surface.

9. The silk electronic component of claim 1 , wherein the silk matrix adheres to a surface upon contact with the surface.

10. The silk electronic component of claim 1 , wherein a portion of the silk matrix dissolves upon contact with aqueous solution to adhere to a surface upon contact with the surface.

11. The silk electronic component of claim 1 , wherein the patterned conductive structure is disposed on a surface of the silk matrix.

12. The silk electronic component of claim 1 , wherein the patterned conductive structure is embedded in the silk matrix.

13. The silk electronic component of claim 1 , wherein the patterned conductive structure comprises a conductive material, wherein the conductive material optionally comprises gold, aluminum, chromium, silver, platinum, copper, titanium, nickel, rhodium, cobalt, iron, zirconium, molybdenum, palladium, hafnium, iridium, tungsten, tantalum, indium tin oxide (ITO), polysilicon, graphite, or any combination thereof.

14. The silk electronic component of claim 1 , wherein the patterned conductive structure comprises a resonator, split-ring resonator, polarization-sensitive electric resonator, polarization non-sensitive electric resonator, radio-frequency identification (RFID) device, metamaterial structure, antenna, conductive coil, or any combination thereof.

15. The silk electronic component of claim 1 , wherein the silk electronic component responds to microwave radiation, infrared radiation, visible radiation, ultraviolet radiation, or any combination thereof.

16. The silk electronic component of claim 1 , wherein the silk electronic component responds to the electromagnetic radiation to exhibit an electromagnetic signature in the terahertz (THz) frequencies, megahertz (MHz) frequencies, gigahertz (GHz) frequencies, petahertz (PHz) frequencies, or any combination thereof.

17. The silk electronic component of claim 1 , wherein the silk electronic component responds to the electromagnetic radiation to exhibit an electromagnetic signature, the electromagnetic signature comprising a resonance response.

18. The silk electronic component of claim 1 , wherein the silk electronic component modulates the electromagnetic radiation.

19. The silk electronic component of claim 1 , wherein the plurality of conductive metamaterial elements that are coupled to the silk matrix conductive material comprise a metal.

20. The silk electronic component of claim 19 , wherein the metal comprises copper, gold, silver, platinum, chromium, cobalt, aluminum, nickel, rhodium, titanium, magnesium, iron, zirconium, molybdenum, palladium, hafnium, iridium, tungsten, tantalum, and combinations thereof.

21. The silk electronic component of claim 19 , wherein the non-metal comprises indium tin oxide (ITO), polysilicon, graphite, and combinations thereof.

22. The silk electronic component of claim 1 , wherein the plurality of conductive metamaterial elements that are coupled to the silk matrix conductive material comprise a non-metal.

23. A method of fabricating a silk electronic component of claim 1 , the method comprising:
positioning a shadow mask on a silk matrix;
depositing a metamaterial on the silk matrix through openings in the shadow mask; and
removing the shadow mask from the silk matrix.

24. The method of claim 23 , wherein depositing the metamaterial comprises spray-depositing the metamaterial.

25. The method of claim 23 , wherein depositing the metamaterial comprises evaporating the metamaterial through the openings in the shadow mask.

26. A method of fabricating a silk electronic component of claim 1 , the method comprising:
depositing a conductive material in a pattern on a substrate;
applying an aqueous silk solution over the substrate;
drying the aqueous silk solution to form a silk matrix, the silk matrix encapsulating the conductive material as the silk matrix dries to form a silk metamaterial composite having at least one patterned conductive structure coupled to the silk matrix;
detaching the silk metamaterial composite from the substrate; and
wherein the silk metamaterial composite is characterized in that when the composite responds to electromagnetic radiation, the composite exhibits a resonant response.

27. The method of claim 26 , further comprising etching a structure in the silk matrix according to the pattern of the conductive material.

Assignees

• Kaplan David
• Omenetto Fiorenzo
• Tao Hu
• Averitt Richard
• Strikwerda Andrew
• Zhang Xin
• Tsioris Konstantinos
• Univ Tufts
• Univ Boston

Inventors

• Kaplan David
• Omenetto Fiorenzo
• Tao Hu
• Averitt Richard
• Strikwerda Andrew
• Zhang Xin
• Tsioris Konstantinos

Classifications

• G02B1/002

  made of materials engineered to provide properties not available in nature, e.g. metamaterials · CPC title

• H05K1/032 Primary

  consisting of one material · CPC title

• H01Q7/00 Primary

  Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop · CPC title

• G01N21/3586

  by Terahertz time domain spectroscopy [THz-TDS] · CPC title