Substrate heat treatment apparatus

US9603195B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9603195-B2
Application numberUS-201414314348-A
CountryUS
Kind codeB2
Filing dateJun 25, 2014
Priority dateDec 27, 2011
Publication dateMar 21, 2017
Grant dateMar 21, 2017

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  1. Title

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  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An apparatus includes a C-shaped susceptor including a first substrate placement portion capable of placing the substrate, and an opening portion, a substrate stage including a second substrate placement portion capable of placing the substrate, and a susceptor support portion configured to support the susceptor, and a complementary portion formed separately from the susceptor support portion, engaged with the susceptor support portion, and configured to complement an opening portion of the susceptor to form the susceptor into an annular shape in a state in which the susceptor support portion supports the susceptor. When the substrate is placed on the second substrate placement portion and the second substrate placement portion is located at a predetermined distant position with respect to the heat radiation surface, the susceptor forms the annular shape together with the complementary portion to surround the substrate.

First claim

Opening claim text (preview).

The invention claimed is: 1. A substrate heat treatment apparatus which performs heat treatment on a substrate in a vacuum processing chamber, comprising: a C-shaped susceptor including a C shape portion in which an opening portion is formed in a circumferential direction of an annular shape, and a claw portion capable of supporting the substrate which claw portion is formed inside the C shape portion; a substrate holding portion configured to hold the substrate, wherein the substrate holding portion includes: a substrate holding portion base; a placement portion which has a portion capable of supporting the substrate and is arranged at a center of the substrate holding portion base and has substantially a same size as a size of the substrate; and a susceptor support portion having an annular recessed portion configured to support the C-shaped susceptor; a substrate stage formed separately from the substrate holding portion, wherein the substrate holding portion is arranged on the substrate stage; a heating unit, including a heat radiation surface at a position above the substrate stage at which the heat radiation surface faces the placement portion, configured to heat the substrate placed on the placement portion by heat from the heat radiation surface; a moving unit configured to move the substrate stage to set the placement portion at a predetermined position with respect to the heat radiation surface; a lift portion configured to come into contact with a lower surface of the susceptor at a substrate acceptance position and support the susceptor in a state in which the susceptor is spaced apart from the susceptor support portion; and a complementary portion formed separately from the susceptor support portion, engaged with the susceptor support portion, and configured to complement the opening portion of the susceptor such that the complementary portion and the susceptor are in an annular shape in a state in which the susceptor support portion supports the susceptor, wherein a recess portion, which is configured to be engaged with the claw portion, is formed in a peripheral portion of the placement portion, wherein when the substrate is placed on the placement portion and the placement portion is located at the predetermined position with respect to the heat radiation surface, the susceptor forms the annular shape together with the complementary portion to surround a peripheral portion of the substrate, and an inner surface of the substrate holding portion base is configured to surround an outer surface of the C-shaped susceptor and an outer surface of the complementary portion. 2. The substrate heat treatment apparatus according to claim 1 , wherein when the moving unit moves the substrate stage in a direction in which the substrate stage comes close to the heat radiation surface, the susceptor moves apart from the lift portion and is supported by the susceptor support portion. 3. The substrate heat treatment apparatus according to claim 1 , wherein when the susceptor support portion holds the susceptor, the placement portion supports the substrate placed on the claw portion. 4. The substrate heat treatment apparatus according to claim 1 , wherein when the moving unit moves the substrate stage in a direction in which the substrate stage moves apart from the heat radiation surface, the lift portion comes into contact with the lower surface of the susceptor and supports the susceptor at an upper position with respect to the substrate stage. 5. The substrate heat treatment apparatus according to claim 1 , wherein an upper surface of the susceptor is formed to arrange an upper surface of the substrate at a position lower than the upper surface of the susceptor when the substrate is placed on the claw portion. 6. The substrate heat treatment apparatus according to claim 1 , wherein the susceptor and the complementary portion are formed from the same material. 7. The substrate heat treatment apparatus according to claim 1 , wherein the claw portion is configured to have a plurality of claws capable of supporting the substrate, and a peripheral portion of the placement portion is configured to have a plurality of recess portions capable of engaging with the plurality of claws. 8. The substrate heat treatment apparatus according to claim 1 , wherein a bottom portion of the susceptor support portion is configured to have a through hole, and a bottom portion of the complementary portion is configured to have a projection portion, the projection portion is fitted in the through hole by fitting with a gap from the through hole. 9. The substrate heat treatment apparatus according to claim 1 , wherein when the substrate is placed on the placement portion, an upper surface of the placement portion is configured to be lower than an upper surface of a peripheral portion of the substrate holding portion base. 10. The substrate heat treatment apparatus according to claim 1 , wherein the substrate stage is configured to be made of a material capable of absorbing radiant heat radiated by the heating unit and radiating the absorbed heat and resisting high heat. 11. The substrate heat treatment apparatus according to claim 1 , wherein an end portion of the opening portion of the C-shaped susceptor and an end portion of the complementary portion are configured to have a meshing structure. 12. The substrate heat treatment apparatus according to claim 11 , wherein in the meshing structure, the end portion of the complementary portion is configured to include a convex portion and a concave portion which are formed in a circumferential direction of the annular shape, the end portion of the opening portion of the C-shaped susceptor is configured to include a concave portion and a convex portion which are formed in a circumferential direction of the annular shape, in a state in which the C-shaped susceptor and the complementary portion are supported on the susceptor support portion, the convex portion, formed in the circumferential direction of the annular shape at the end portion of the complementary portion, is configured to be engaged with the concave portion formed in the circumferential direction of the annular shape at the end portion of the opening portion of the C-shaped susceptor, and the concave portion, formed in the circumferential direction of the annular shape at the end portion of the complementary portion, is configured to be engaged with the convex portion formed in the circumferential direction of the annular shape at the end portion of the opening portion of the C-shaped susceptor.

Assignees

Inventors

Classifications

  • characterised by the mechanical construction of the susceptor, stage or support · CPC title

  • characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

  • characterised by lifting arrangements, e.g. lift pins · CPC title

  • Vertical transfer of a single workpiece · CPC title

  • mainly by radiation · CPC title

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Frequently asked questions

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What does patent US9603195B2 cover?
An apparatus includes a C-shaped susceptor including a first substrate placement portion capable of placing the substrate, and an opening portion, a substrate stage including a second substrate placement portion capable of placing the substrate, and a susceptor support portion configured to support the susceptor, and a complementary portion formed separately from the susceptor support portion, …
Who is the assignee on this patent?
Canon Anelva Corp
What technology area does this patent fall under?
Primary CPC classification H10P72/0434. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 21 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).