Interconnect structure having subtractive etch feature and damascene feature

Patent metadata

Field	Value
Publication number	US-9601426-B1
Application number	US-201615166570-A
Country	US
Kind code	B1
Filing date	May 27, 2016
Priority date	Jan 28, 2016
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

Methods of forming an interconnect structure include depositing a first conductive material on a substrate. Aspects include subtractively etching the conductive material to form a patterned first conductive layer, and depositing a dielectric layer on interconnect structure. Aspects also include depositing a second conductive material on the dielectric layer and removing the second conductive material through the top of the second metal liner.

First claim

What is claimed is:

1. An interconnect structure comprising:
a first insulator layer;
a first dielectric layer on the first insulator layer;
a subtractive etch feature comprising a first conductive material, the subtractive etch feature having a first subtractive etch vertical wall, a second subtractive etch vertical wall, and an angle between the first subtractive etch vertical wall and a horizontal plane that is less than 90 degrees; and
a damascene feature comprising a second conductive material, the damascene feature having a first damascene vertical wall, a second damascene vertical wall, and an angle between the first damascene vertical wall and the horizontal plane that is greater than 90 degrees;
wherein the first subtractive etch vertical wall is parallel to the second damascene vertical wall.

2. The interconnect structure according to claim 1 , further comprising a via having a first via upper wall, wherein the first via upper wall is parallel to the first subtractive etch vertical wall or to the first damascene vertical wall.

3. The interconnect structure according to claim 1 , wherein the first conductive material comprises a first conductive material selected from the group consisting of tungsten, copper, gold, silver, cobalt, aluminum, and alloys thereof.

4. The interconnect structure according to claim 1 , further comprising a second insulator layer.

5. The interconnect structure according to claim 1 , wherein the second conductive material is selected from the group consisting of tungsten, copper, gold, silver, cobalt, aluminum, and alloys thereof.

Assignees

• IBM

Inventors

• Bonilla Griselda
• Choi Samuel S
• Filippi Ronald G
• Huang Elbert E
• Lustig Naftali E
• Simon Andrew H

Classifications

• H10W20/0633

  using subtractive patterning of the conductive members · CPC title

• H10W20/438

  Interconnections with multiple fill metals, e.g. having different metals in wide and narrow interconnections, or having different metals in vias and in trenches · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P50/264

  by chemical means · CPC title