Patterned conductive structure and method for forming the same

Patent metadata

Field	Value
Publication number	US-9595754-B2
Application number	US-201414583446-A
Country	US
Kind code	B2
Filing date	Dec 26, 2014
Priority date	Dec 26, 2014
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

A method for forming a patterned conductive structure is provided. The method includes forming a soluble layer on a surface of a substrate, wherein the soluble layer has an opening exposing a rough portion of the surface. A first conductive layer is formed on the soluble layer, wherein the first conductive layer extends onto the rough portion in the opening. The soluble layer and the first conductive layer on the soluble layer are removed, wherein a portion of the first conductive layer corresponding to the rough portion is remained on the substrate. A patterned conductive structure formed by the method is also provided.

First claim

What is claimed is:

1. A method for forming a patterned conductive structure, comprising:
forming a soluble layer on a surface of a substrate,
wherein the soluble layer has an opening exposing a rough portion of the surface of the substrate;
forming a first conductive layer on the soluble layer, wherein the first conductive layer extends onto the rough portion in the opening; and
removing the soluble layer and the first conductive layer on the soluble layer, wherein a portion of the first conductive layer corresponding to the rough portion is remained on the substrate.

2. The method as claimed in claim 1 , wherein the step of removing the soluble layer and the first conductive layer on the soluble layer comprises performing a washing process using a solvent.

3. The method as claimed in claim 2 , wherein the solvent is selected from a group consisting of water, ethanol, methanol, isopropanol, dimethylformamide (DMF), chloroform or a combination thereof.

4. The method as claimed in claim 1 , wherein the soluble layer is dissolved in a nonaggressive solvent to be removed.

5. The method as claimed in claim 1 , wherein the soluble layer comprises polyvinyl alcohol, polyethylene glycol, polyethylene glycol-polypropylene glycol copolymer, linear polyacrylamice, polyvinylpyrrolidone (homo or copolymer), polyacrylic acid or a combination thereof.

6. The method as claimed in claim 1 , wherein the substrate comprises polycarbonate (PC), acrylonitrile butadiene styrene (ABS), PC and ABS alloy or nylon (PA).

7. The method as claimed in claim 1 , wherein the step of forming the soluble layer comprises:
coating the soluble layer on the substrate; and
forming the opening of the soluble layer and the rough portion of the surface by a laser treatment.

8. The method as claimed in claim 1 , wherein the step of forming the first conductive layer on the soluble layer comprises a physical vapor deposition (PVD) process, a sputtering process, an ion plating process or a vacuum evaporation process.

9. The method as claimed in claim 1 , wherein a smooth portion of the surface of the substrate is exposed after removing the soluble layer.

10. The method as claimed in claim 1 , wherein the first conductive layer comprises an underlying layer and an overlying layer, and wherein the underlying layer comprises Ni, Pd or Ag and the overlying layer comprises Cu.

11. The method as claimed in claim 1 , further comprising forming a second conductive layer directly on the first conductive layer corresponding to the rough portion.

12. The method as claimed in claim 11 , wherein the second conductive layer is formed by an electroless process.

13. The method as claimed in claim 11 , further comprising removing residues on the surface outside of the rough portion by an etching process after forming the second conductive layer.

14. The method as claimed in claim 1 , wherein the patterned conductive structure forms an antenna element.

Assignees

• Wistron Neweb Corp

Inventors

• Radi Babak
• Lu Yong-Jyun
• Chiu Ming-Chi
• Hsu Chien-Min
• Chen Shih-Hong

Classifications

• H05K2203/1184

  Underetching, e.g. etching of substrate under conductors or etching of conductor under dielectrics; Means for allowing or controlling underetching · CPC title

• H05K3/146

  By vapour deposition · CPC title

• H05K2203/0769

  Dissolving insulating materials, e.g. coatings, not used for developing resist after exposure · CPC title

• H05K3/048

  using a lift-off resist pattern or a release layer pattern · CPC title

• H05K1/0353

  consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement · CPC title