Combination metal oxide semi-conductor field effect transistor (MOSFET) and junction field effect transistor (JFET) operable for modulating current voltage response or mitigating electromagnetic or radiation interference effects by altering current flow through the MOSFETs semi-conductive channel region (SCR)

Patent metadata

Field	Value
Publication number	US-9595519-B2
Application number	US-201514668081-A
Country	US
Kind code	B2
Filing date	Mar 25, 2015
Priority date	Mar 19, 2015
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using a combination of a metal-oxide semiconductor field effect transistor (MOSFET) and junction field effect transistor (JFET) disposed perpendicularly and within a certain orientation to each other. An embodiment of the invention can be formed and operable for modulating current and/or voltage response or mitigating electromagnetic or radiation interference effects on the MOSFET by controlling a semi-conductive channel region (SCR) using an additional gate, e.g., JFET, disposed perpendicularly with respect to the MOSFET configured to generate an electromagnetic field into the MOSFET's semi-SCR. A control system for controlling operation is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as radio frequency transmitter or receiver systems. Methods of operation for a variety of modes are also provided.

First claim

The invention claimed is:

1. An electrical system comprising:
a metal oxide semi-conductor (MOS) field effect transistor (MOSFET) section disposed in a first substrate section, said MOSFET section comprising a MOSFET control gate, a source region, a drain region, and a semi-conductive channel region within a gate insulator region, said semi-conductive channel region formed between said source region and said drain region, said MOSFET control gate is disposed in proximity with and partially overlapping one side of said source region and one side of said drain region, said MOSFET gate is further disposed on a first side of said semi-conductive channel region; and
a monolithic junction field effect transistor (JFET) section disposed on a second side of said gate insulator region that faces away from said MOSFET control gate, said JFET section comprises an opposite dopant of said semi-conductive channel region, said JFET section is further formed comprising a doped region that is not in physical contact with either said source or said drain region and is positioned at a first distance from said MOSFET control gate, said first distance is determined based on a required distance that an electromagnetic field generated by said JFET must travel to pass through said semi-conductive channel region;
wherein said JFET section is disposed perpendicularly to said MOSFET on one side of said MOSFET.

2. An electrical system as in claim 1 , further comprising a control system for determining when said JFET and said MOSFET sections are to be operated comprising an automated system including sensors as well as a control section, wherein said automated system can include radiation sensors.

3. An electrical system as in claim 2 , wherein said control system can comprise a radio frequency transmitter or receiver system.

4. The electrical system as in claim 1 , further comprising a plurality of alternating current (AC) voltage sources each one coupled to said MOSFET section and said JFET section.

5. An electrical system as in claim 2 , further comprising a control system operable to modulate said plurality of alternating-current (AC) voltage sources to generate a radio-frequency response output from said MOSFET and JFET sections.

6. An electrical system as in claim 1 , further comprising a plurality of direct-current (DC) voltage sources that are each coupled to an input gate of said MOSFET and JFET sections.

7. An electrical system as in claim 1 , further comprising a direct-current (DC) voltage source that is coupled to an input gate of said MOSFET section wherein an input gate of said JFET is coupled to a source for said MOSFET section coupled to a common drain for said MOSFET section.

8. An electrical system comprising:
a metal oxide semiconductor (MOS) field effect transistor (MOSFET) section formed with a control gate having a first side, a source region, a drain region, and a first semi-conductive channel region (SCR) formed with a first SCR side and an opposing second SCR side, wherein said first SCR is formed having opposing ends abutting and between said source region and said drain region, said first SCR's first side is formed facing and in proximity with said control gate first side on a first side of said MOSFET; and
a junction field effect transistor (JFET) having a first side and comprising a first JFET gate contact region, a second JFET gate contact region, and a JFET semi-conductive channel region having an opposite semi-conductive function as said first SCR, wherein said JFET further defines a first JFET axis running between said first and second JFET gate contact regions, said JFET semi-conductive channel region is disposed overlapping a portion of and facing one side of said first and second JFET gate contact regions at opposing ends of said JFET semi-conductive channel region;
wherein said JFET semi-conductive channel region is formed so that said JFET first axis is perpendicular to said MOSFET's SCR such that operation of the JFET modulates or controls current passing through said SCR that is, absent operation of said JFET, controlled by an electrical path of said MOSFET's SCR.

9. An electrical system as in claim 8 , further comprising a control system for determining when said JFET and said MOSFET is to be operated comprising an automated system including sensors as well as a control section, wherein said automated system can include radiation sensors as well as other control systems.

10. An electrical system as in claim 9 , wherein said control system can comprise a radio-frequency transmitter or receiver system.

11. The electrical system as in claim 8 , further comprising a plurality of alternating-current (AC) voltage sources each one coupled to said MOSFET section and said JFET section.

12. An electrical system as in claim 11 , further comprising a control system operable to modulate said plurality of alternating-current (AC) voltage sources to generate a radio-frequency response output from said MOSFET and JFET sections.

13. An electrical system as in claim 8 , further comprising a plurality of direct-current (DC) voltage sources that are each coupled to an input gate of said MOSFET section and said JFET section.

14. An electrical system as in claim 8 , further comprising a direct-current (DC) voltage source that is coupled to an input gate of said MOSFET section wherein an input gate of said JFET is coupled to a source for said MOSFET section coupled to a common drain for said MOSFET section.

15. A method associated with an electrical system comprising:
providing an electrical system comprising a metal oxide semiconductor (MOS) field effect transistor (MOSFET) section formed with a control gate having a first side, a source region, a drain region, and a first semi-conductive channel region (SCR) formed with a first SCR side and an opposing second SCR side, wherein said first SCR is formed having opposing ends abutting and between said source region and said drain region, said first SCR's first side is formed facing and in proximity with said control gate first side on a first side of said MOSFET; and
a junction field effect transistor (JFET) having a first side and comprising a first JFET gate contact region, a second JFET gate contact region, and a JFET semi-conductive channel region having an opposite semi-conductive function as said first SCR, wherein said JFET further defines a first JFET axis running between said first and second JFET gate contact regions, said JFET semi-conductive channel region is disposed overlapping a portion of and facing one side of said first and second JFET gate contact regions at opposing ends of said JFET semi-conductive channel region;
wherein said JFET semi-conductive channel region is formed so that said JFET first axis is perpendicular to said MOSFET's SCR such that operation of the JFET modulates or controls current passing through said SCR that is, absent operation of said JFET, controlled by an electrical path of said MOSFET's SCR.

16. A method as in claim 15 further comprising operating said MOSFET in response to a control input to adjust, modulate, or cut-off said current passing through a semi-conductive channel region.

17. A method as in claim 16 , wherein said operating comprises a MOSFET cut-off mode to halt passage of said electrical signals through said MOSFET section.

18. A method as in claim 16 , wherein said operating comprises a MOSFET linear mode to alter resistive characteristics of at least a portion of said MOSFET section.

19. A method as in claim 16 , wherein said operating comprises

Assignees

• Us Navy

Inventors

• Titus Jeffrey L
• Savage Mark
• Cole Patrick L
• Duncan Adam R

Classifications

• H01L27/0705 Primary

  Electricity · mapped topic

• H10D30/615 Primary

  comprising a MOS gate electrode and at least one non-MOS gate electrode · CPC title

• H10D84/401 Primary

  Combinations of FETs or IGBTs with BJTs · CPC title