Semiconductor structure, method of operating same, and production method

Patent metadata

Field	Value
Publication number	US-9165972-B2
Application number	US-201313827899-A
Country	US
Kind code	B2
Filing date	Mar 14, 2013
Priority date	Mar 15, 2012
Publication date	Oct 20, 2015
Grant date	Oct 20, 2015

Abstract

A semiconductor structure includes a semiconductor layer of a first conductivity type, a photosensitive zone configured such that photogenerated charges may be accumulated in a first potential well, a region of the first conductivity type, formed in the semiconductor layer, for temporarily storing the photogenerated charges in a second potential well, a transfer gate between the region of the second conductivity type and the photosensitive zone for defining a potential barrier between the first and second potential wells during a non-transfer phase, and for eliminating the potential barrier between the first and second potential wells during a transfer phase, and a readout structure for reading out the temporarily stored photogenerated charges, which includes a JFET, the gate of which is formed by the region of the second conductivity type.

First claim

The invention claimed is:

1. A semiconductor structure comprising
a semiconductor layer of a first conductivity type,
a photosensitive zone configured such that photogenerated charges may be accumulated in a first potential well;
a region of a second conductivity type, formed in the semiconductor layer, for temporarily storing the photogenerated charges in a second potential well;
a transfer gate between the region of the second conductivity type and the photosensitive zone for defining a potential barrier between the first and second potential wells during a non-transfer phase, and for eliminating the potential barrier between the first and second potential wells during a transfer phase; and
a readout structure for reading out the temporarily stored photogenerated charges, which comprises a JFET, the gate of which is formed by the region of the second conductivity type,
wherein the photosensitive zone is configured as a p-n photodiode which comprises a p-n junction, buried in the semiconductor layer, between a well of the second conductivity type, which is formed in the semiconductor layer, and a surrounding, adjoining portion of the semiconductor layer, and
wherein the well of the second conductivity type extends as far as below the transfer gate so as to there adjoin a well of the first conductivity type which comprises a higher doping concentration than that of the semiconductor layer, the region of the second conductivity type and the JFET being embedded in the well of the first conductivity type.

2. The semiconductor structure as claimed in claim 1 , wherein the photosensitive zone is implemented as a photogate or buried photogate.

3. The semiconductor structure as claimed in claim 1 , wherein the region of the second conductivity type is further coupleable to a supply potential terminal via a reset gate.

4. The semiconductor structure as claimed in claim 1 , the semiconductor structure being implemented in CMOS.

5. The semiconductor structure as claimed in claim 1 , wherein the photosensitive zone is linked to at least one collection gate which is adjoined by at least one transfer gate to which a region may be read out via a JFET structure.

6. The semiconductor structure as claimed in claim 1 , wherein the photosensitive zone and/or a collection gate are connectable, via several transfer gates, to several regions which are linked at least partly to JFET readout structures.

7. The semiconductor structure as claimed in claim 1 , wherein the well of the second conductivity type is covered, in the photosensitive zone, at a front side of the semiconductor layer by a layered semiconductor area of the first conductivity type which comprises a higher doping concentration than the semiconductor layer and the well of the second conductivity type, so that the first potential well is spaced apart from an insulating layer at the front side of the semiconductor layer, via which the transfer gate is insulated from the semiconductor layer.

8. The semiconductor structure as claimed in claim 1 , wherein the region of the second conductivity type comprises a higher doping concentration than the well of the second conductivity type.

9. A semiconductor structure comprising
a semiconductor layer of a first conductivity type,
a photosensitive zone configured such that photogenerated charges may be accumulated in a first potential well;
a region of a second conductivity type, formed in the semiconductor layer, for temporarily storing the photogenerated charges in a second potential well;
a transfer gate between the region of the second conductivity type and the photosensitive zone for defining a potential barrier between the first and second potential wells during a non-transfer phase, and for eliminating the potential barrier between the first and second potential wells during a transfer phase; and
a readout structure for reading out the temporarily stored photo generated charges, which comprises a JFET, the gate of which is formed by the region of the second conductivity type,
wherein the JFET comprises a channel area of the first conductivity type which adjoins the region of the second conductivity type, is embedded in a further well of the second conductivity type, and comprises a drain terminal and a source terminal so as to form the JFET along with the region of the second conductivity type.

10. The semiconductor structure as claimed in claim 9 , wherein the photosensitive zone is configured as a p-n photodiode which comprises a p-n junction, buried in the semiconductor layer, between a well of the second conductivity type, which is formed in the semiconductor layer, and a surrounding, adjoining portion of the semiconductor layer.

11. The semiconductor structure as claimed in claim 10 , wherein the well of the second conductivity type is covered, in the photosensitive zone, at a front side of the semiconductor layer by a layered semiconductor area of the first conductivity type which comprises a higher doping concentration than the semiconductor layer and the well of the second conductivity type, so that the first potential well is spaced apart from an insulating layer at the front side of the semiconductor layer, via which the transfer gate is insulated from the semiconductor layer.

12. The semiconductor structure as claimed in claim 10 , wherein the region of the second conductivity type comprises a higher doping concentration than the well of the second conductivity type.

13. The semiconductor structure as claimed in claim 9 , wherein the channel area of the first conductivity type extends laterally to a drift current direction along which the photogenerated charges move from the first potential well into the second potential well during the transfer phase.

14. The semiconductor structure as claimed in claim 9 , wherein the photosensitive zone is implemented as a photogate or buried photogate.

15. The semiconductor structure as claimed in claim 9 , wherein the region of the second conductivity type is further coupleable to a supply potential terminal via a reset gate.

16. The semiconductor structure as claimed in claim 9 , the semiconductor structure being implemented in CMOS.

17. The semiconductor structure as claimed in claim 9 , wherein the photosensitive zone is linked to at least one collection gate which is adjoined by at least one transfer gate to which a region may be read out via a JFET structure.

18. The semiconductor structure as claimed in claim 9 , wherein the photosensitive zone and/or a collection gate are connectable, via several transfer gates, to several regions which are linked at least partly to JFET readout structures.

Assignees

• Fraunhofer Ges Forschung

Inventors

• Suess Andreas
• Brockherde Werner
• Hosticka Bedrich

Classifications

• H10F39/8037

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