Organosilane precursors for ALD/CVD silicon-containing film applications

Patent metadata

Field	Value
Publication number	US-9593133-B2
Application number	US-201314415647-A
Country	US
Kind code	B2
Filing date	Jul 19, 2013
Priority date	Jul 20, 2012
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

First claim

What is claimed is:

1. A Si-containing thin film forming precursor having the following formula:

wherein each L 1 and L 2 is a nitrogen atom; L 1 and L 2 being joined together via a carbon bridge having two to three carbon atoms; L 1 , L 2 and the carbon bridge forming a monoanionic ligand bonded to silicon.

2. The Si-containing thin film forming precursor of claim 1 , having the following formula:

wherein R 1 , R 2 , R 3 , R 4 , and R 5 may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle.

3. The Si-containing thin film forming precursor of claim 2 , wherein the Si-containing thin film forming precursor is H 3 Si(-(iPr)N—C 3 H 3 —N(iPr)-).

4. The Si-containing thin film forming precursor of claim 1 , having the following formula:

wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle.

5. The Si-containing thin film forming precursor of claim 4 , wherein the Si-containing thin film forming precursor is H 3 Si(-(iPr)N—C 3 H 6 —N(Me) 2 -).

6. The Si-containing thin film forming precursor of claim 1 , having the following formula:

wherein R 1 , R 2 , R 3 , R 4 , and R 5 may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle.

7. The Si-containing thin film forming precursor of claim 6 , wherein the Si-containing thin film forming precursor is H 3 Si(-(iPr)N—CH 2 CH═N(iPr)-).

8. The Si-containing thin film forming precursor of claim 1 , having the following formula:

wherein R 1 , R 2 , R 3 , R 4 , and R 5 may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle.

9. The Si-containing thin film forming precursor of claim 8 , wherein the Si-containing thin film forming precursor is H 3 Si((iPr)NC 2 H 4 N(Me) 2 .

10. A method of depositing a Si-containing layer on a substrate, the method comprising:
introducing at least one Si-containing thin film forming precursor of claim 1 into a reactor having at least one substrate disposed therein;
depositing at least part of the Si-containing thin film forming precursor onto the at least one substrate to form a Si-containing layer using a vapor deposition method.

11. The method of claim 10 , further comprising introducing into the reactor at least one co-reactant.

12. The method of claim 11 , wherein the co-reactant is selected from the group consisting of O 2 , O 3 , H 2 O, H 2 O 2 , NO, NO 2 , a carboxylic acid, radicals thereof, and combinations thereof.

13. The method of claim 11 , wherein the co-reactant is selected from the group consisting of H 2 , NH 3 , (SiH 3 ) 3 N, hydridosilanes, chlorosilanes and chloropolysilanes, alkysilanes, hydrazines, organic amines, pyrazoline, pyridine, B-containing molecules, alkyl metals, radical species thereof, and mixtures thereof.

14. The method of claim 13 , wherein the co-reactant is selected from the group consisting of H 2 , NH 3 , SiH 4 , Si 2 H 6 , Si 3 H 8 , SiH 2 Me 2 , SiH 2 Et 2 , N(SiH 3 ) 3 , hydrogen radicals thereof, and mixtures thereof.

15. The method of claim 13 , wherein the co-reactant is selected from the group consisting of SiHCl 3 , Si 2 Cl 6 , Si 2 HCl 5 , Si 2 H 2 Cl 4 , and cyclo-Si 6 H 6 Cl 6 .

Assignees

• Air Liquide American
• America Air Liquide Inc

Inventors

• Dussarrat Christian
• Kuchenbeiser Glenn
• Pallem Venkateswara R

Classifications

• C23C16/44

  characterised by the method of coating (C23C16/04 takes precedence) · CPC title

• B05D1/60

  Deposition of organic layers from vapour phase (vapour phase deposition in general C23C14/00, C23C16/00) · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title