Method for producing a plurality of radiation-emitting semiconductor chips

Patent metadata

Field	Value
Publication number	US-9590151-B2
Application number	US-201414785620-A
Country	US
Kind code	B2
Filing date	Apr 14, 2014
Priority date	Apr 19, 2013
Publication date	Mar 7, 2017
Grant date	Mar 7, 2017

Abstract

A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps:
providing a plurality of semiconductor bodies ( 1 ) which are suitable for emitting electromagnetic radiation from a radiation exit face ( 3 ), applying the semiconductor bodies ( 1 ) to a carrier ( 2 ), applying a first mask layer ( 4 ) to regions of the carrier ( 2 ) between the semiconductor bodies ( 1 ), applying a conversion layer ( 5 ) to the entire surface of the semiconductor bodies ( 1 ) and the first mask layer ( 4 ) using a spray coating method, and removing the first mask layer ( 4 ), such that in each case a conversion layer ( 5 ) arises on the radiation exit faces ( 3 ) of the semiconductor bodies ( 1 ).

First claim

The invention claimed is:

1. A method for producing a plurality of radiation-emitting semiconductor chips having the following steps:
providing a plurality of semiconductor bodies which are suitable for emitting electromagnetic radiation from a radiation exit face;
applying the semiconductor bodies to a carrier;
applying a first mask layer to regions of the carrier between the semiconductor bodies;
applying a conversion layer to the entire surface of the semiconductor bodies and the first mask layer using a spray coating method;
removing the first mask layer, such that in each case a conversion layer arises on the radiation exit faces of the semiconductor bodies;
applying a second mask layer to the conversion layer, which in each case completely covers the conversion layer and leaves the regions between the semiconductor bodies free;
applying a reflective layer over the entire surface of the second mask layer and the regions between the semiconductor bodies using a spray coating method; and
removing the second mask layer, such that the regions between the semiconductor bodies are covered with a reflective layer.

2. The method according to claim 1 , in which the first mask layer projects above the semiconductor bodies.

3. The method according to claim 1 , in which the conversion layer comprises an organic potting material, into which particles of an inorganic luminescent material have been introduced.

4. The method according to claim 3 , in which the spray coating method for applying the conversion layer ( 5 ) comprises the following steps:
providing a suspension of the luminescent material particles, the organic potting material and an organic solvent; and
spraying the suspension onto the surface to be coated.

5. The method according to claim 4 , in which the luminescent material particles have a concentration of between 10% by weight and 45% by weight inclusive in the suspension.

6. The method according to claim 1 , in which the diameter of the luminescent material particles has a median d 50 of at most 35 micrometers.

7. The method according to claim 1 , in which the conversion layer has a thickness of between 5 micrometers and 80 micrometers inclusive.

8. The method according to one claim 1 , in which the spray coating method for applying the conversion layer comprises a plurality of successive spraying steps, wherein in each spraying step an individual conversion layer is produced.

9. The method according to claim 8 , in which the individual conversion layers are dried between the individual spraying steps.

10. The method according to claim 1 , in which the reflective layer comprises reflective particles, which have been introduced into an organic potting material.

11. The method according to claim 1 , in which the spray coating method for applying the reflective layer comprises the following steps:
providing a suspension of reflective particles, an organic potting material and an organic solvent; and
spraying the suspension onto the surface to be coated.

12. The method according to claim 1 , in which the reflective layer has a thickness of between 5 micrometers and 30 micrometers inclusive.

13. The method according to claim 1 , in which one of the following devices is used as first mask layer and/or second mask layer: a patterned photoresist layer, a stencil or a prepatterned film.

14. A method for producing a plurality of radiation-emitting semiconductor chips having the following steps:
providing a plurality of semiconductor bodies which are suitable for emitting electromagnetic radiation from a radiation exit face;
applying the semiconductor bodies to a carrier;
applying a first mask layer to regions of the carrier between the semiconductor bodies;
applying a conversion layer to the entire surface of the semiconductor bodies and the first mask layer using a spray coating method;
removing the first mask layer, such that in each case a conversion layer arises on the radiation exit faces of the semiconductor bodies; and
applying an adhesion promoting layer over the entire surface of the carrier with the semiconductor bodies, wherein in each case a conversion layer is arranged on the radiation exit face.

15. A method for producing a plurality of radiation-emitting semiconductor chips having the following steps:
providing a plurality of semiconductor bodies which are suitable for emitting electromagnetic radiation from a radiation exit face;
applying the semiconductor bodies to a carrier;
applying a first mask layer to regions of the carrier between the semiconductor bodies;
applying a conversion layer to the entire surface of the semiconductor bodies and the first mask layer using a spray coating method;
removing the first mask layer, such that in each case a conversion layer arises on the radiation exit faces of the semiconductor bodies; and
applying a reflective layer over the entire surface of the semiconductor bodies, such that a reflective layer is arranged in the beam path of the semiconductor bodies of the subsequent semiconductor chips.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Richter Markus
• Baumgartner Alexander
• Gallmeier Hans-Christoph
• Albrecht Tony

Classifications

• H01L2933/0058

  Electricity · mapped topic

• H01L33/508

  Electricity · mapped topic

• H01L2933/0041

  Electricity · mapped topic

• H01L33/54

  Electricity · mapped topic

• H01L33/56

  Electricity · mapped topic