Substrate correction device, substrate lamination device, substrate processing system, substrate correction method, substrate processing method, and semiconductor device manufacturing method
US-2024404859-A1 · Dec 5, 2024 · US
US9589820B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9589820-B2 |
| Application number | US-201514725317-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 29, 2015 |
| Priority date | May 29, 2015 |
| Publication date | Mar 7, 2017 |
| Grant date | Mar 7, 2017 |
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Official abstract text for this publication.
A semiconductor apparatus is provided. The semiconductor apparatus includes a wafer chuck configured to hold a wafer, and a first nozzle configured to dispense first chemical liquid onto the wafer. The semiconductor apparatus also includes a second nozzle configured to dispense second chemical liquid onto the wafer at a first dispensing time after the first nozzle stops dispensing the first chemical liquid. The semiconductor apparatus also includes an image device configured to take images of the first nozzle and the second nozzle in sequence, and a processing module configured to analyze the images. The processing module adjusts the first dispensing time when a first defect image shows the first chemical liquid and the second chemical liquid existing in a space close to the first and the second nozzles and flowing to the wafer.
Opening claim text (preview).
What is claimed is: 1. An adjustment method for a semiconductor apparatus, comprising: dispensing first chemical liquid by a first nozzle onto a wafer; continually taking images of the first nozzle and a second nozzle in sequence by an image device; dispensing second chemical liquid by the second nozzle onto the wafer at a first dispensing time; analyzing each of the images by a processing module; and processing an adjustment process when a first defective feature is shown in a first defect image of the images, wherein the first defective feature is that the first chemical liquid and the second chemical liquid existing in a space close to the first and the second nozzles, and flowing to the wafer, wherein the adjustment process further comprises adjusting the first dispensing time by the processing module. 2. The adjustment method as claimed in claim 1 , further comprising continually taking the images of the first nozzle and the second nozzle in sequence by the image device from the first nozzle dispensing the first chemical liquid to the second nozzle dispensing the second chemical liquid. 3. The adjustment method as claimed in claim 1 , further comprising: dispensing the first chemical liquid by the first nozzle onto the wafer at a starting time; stopping dispensing of the first chemical liquid at a first stopping time; and stopping dispensing of the second chemical liquid at a second stopping time, wherein the image device takes the images in sequence during the first starting time and the second stopping time, and the first dispensing time is later than the first stopping time. 4. The adjustment method as claimed in claim 1 , wherein the first defective feature further comprises that the first chemical liquid is mixed or interferes with the second chemical liquid in the space. 5. The adjustment method as claimed in claim 1 , further comprising: setting the second nozzle dispensing the second chemical liquid at a second dispensing time by the processing module according to a shooting time of the first defect image, wherein the second dispensing time is later than the first dispensing time. 6. The adjustment method as claimed in claim 5 , wherein the image device stops taking the images of the first nozzle and the second nozzle after the second dispensing time or after the second nozzle starts to dispense the second chemical liquid. 7. The adjustment method as claimed in claim 1 , further comprising: drawing a first volume of the first chemical liquid in the first nozzle by a flow controller when the first nozzle stops dispensing the first chemical liquid, processing the adjustment process when a second defective feature is shown in a second defect image of the images, wherein the first chemical liquid is dispensed via an opening formed on a bottom surface of the nozzle, and the second defective feature is that the first chemical liquid protrudes over the opening and the bottom surface, wherein the adjustment process further comprises: adjusting the first volume by the processing module. 8. The adjustment method as claimed in claim 7 , further comprising: setting the first volume to a second volume by the processing module, wherein the second volume is greater than the first volume. 9. The adjustment method as claimed in claim 8 , wherein the second volume is determined by the first volume plus an adjusting volume, and the adjusting volume is in a range from about 0.01 ml to about 0.1 ml. 10. The adjustment method as claimed in claim 7 , wherein the first volume of the first chemical liquid is in a range from about 0.5 ml to about 300 ml. 11. The adjustment method as claimed in claim 1 , wherein the number of images taken by the image device per second is in a range from about 5 to about 1200. 12. The adjustment method as claimed in claim 1 , further comprising: holding the wafer on a wafer chuck; and moving the first nozzle and the second nozzle to a dispensing positon close to the wafer and located over a central area of the wafer. 13. The adjustment method as claimed in claim 1 , further comprising: continually taking the images of the first nozzle and the second nozzle in sequence by the image device in an image time period, which is in a range from about 0.0008 seconds to 0.2 seconds. 14. An adjustment method for a semiconductor apparatus, comprising: dispensing first chemical liquid onto a wafer via an opening by a first nozzle, wherein the opening is formed on a bottom surface of the first nozzle; continually taking images of the first nozzle and a second nozzle in sequence by an image device; dispensing second chemical liquid by the second nozzle onto the wafer at a first dispensing time; stopping dispensing of the first chemical liquid; drawing back a first volume of the first chemical liquid in the first nozzle by a flow controller when the first nozzle stops dispensing the first chemical liquid; analyzing each of the images by a processing module; adjusting the first volume by the processing module when one of the images shows the first chemical liquid protrudes over the opening and the bottom surface; and processing an adjustment process when a first defective feature is shown in a first defect image of the images, wherein the first defective feature is that the first chemical liquid and the second chemical liquid existing in a space close to the first and the second nozzles, and flowing to the wafer, wherein the adjustment process further comprises adjusting the first dispensing time by the processing module. 15. The adjustment method as claimed in claim 14 , further comprising: setting the first volume to a second volume by the processing module, wherein the second volume is greater than the first volume. 16. The adjustment method as claimed in claim 15 , wherein the second volume is determined by the first volume plus an adjusting volume, and the adjusting volume is in a range from about 0.01 ml to about 0.1 ml. 17. The semiconductor method as claimed in claim 14 , wherein the number of images taken by the image device per second is in a range from about 5 to about 1200. 18. The adjustment method as claimed in claim 14 , further comprising: holding the wafer on a wafer chuck; and moving the first nozzle to a dispensing positon close to the wafer and located over a central area of the wafer. 19. The adjustment method as claimed in claim 14 , wherein the first volume of the first chemical liquid is in a range from about 0.5 ml to about 300 ml.
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