Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy

Patent metadata

Field	Value
Publication number	US-9589619-B2
Application number	US-201514617919-A
Country	US
Kind code	B2
Filing date	Feb 9, 2015
Priority date	Feb 9, 2015
Publication date	Mar 7, 2017
Grant date	Mar 7, 2017

Abstract

Methods and apparatus relating to spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy are disclosed. In an example, disclosed is a three-terminal magnetic tunnel junction (MTJ) storage element that is programmed via a combination of voltage-controlled magnetic anisotropy (VCMA) and spin-orbit torque (SOT) techniques. Also disclosed is a memory controller configured to program the three-terminal MTJ storage element via VCMA and SOT techniques. The disclosed devices improve efficiency over conventional devices by using less write energy, while having a design that is simpler and more scalable than conventional devices. The disclosed devices also have increased thermal stability without increasing required switching current, as critical switching current between states is essentially the same.

First claim

What is claimed is:

1. A method for writing data to a three-terminal spin-orbit-torque magnetoresistive memory having a magnetic tunnel junction (MTJ) including a free layer located between an oxide barrier layer and a substantially planar spin hall-effect material, comprising:
applying a first voltage across the MTJ to reduce a magnetic anisotropy of the free layer by inducing an electric field across the oxide barrier layer and reducing energy barrier for switching the free layer magnetization; and
applying a second voltage across the substantially planar spin hall-effect material while the first voltage is applied across the MTJ to cause a current to flow through the substantially planar spin hall-effect material and thereby apply a spin-orbit torque to the free layer, thus causing the free layer to switch between a parallel state and an antiparallel state through spin accumulation on a surface of the substantially planar spin hall-effect material.

2. The method of claim 1 , wherein the electric field is induced in a manner that reduces the magnetic anisotropy of the free layer from a naturally-occurring anisotropy of the free layer.

3. The method of claim 2 , wherein the reduced magnetic anisotropy of the free layer causes a reduction in a switching current of the MTJ.

4. The method of claim 1 , wherein the first voltage is applied across the MTJ between the substantially planar spin hall-effect material and an MTJ electrode.

5. An apparatus, comprising:
a memory controller configured to write data to a three-terminal spin-orbit-torque magnetoresistive memory having a magnetic tunnel junction (MTJ) including a free layer located between an oxide barrier layer and a substantially planar spin hall-effect material, including:
means for applying a first voltage across the MTJ to reduce a magnetic anisotropy of the free layer by inducing an electric field across the oxide barrier layer; and
means for applying a second voltage across the substantially planar spin hall-effect material while the first voltage is applied across the MTJ to cause a current to flow through the substantially planar spin hall-effect material and thereby apply a spin-orbit torque to the free layer, thus causing the free layer to switch between a parallel state and an antiparallel state through spin accumulation on a surface of the substantially planar spin hall-effect material.

6. The apparatus of claim 5 , wherein the electric field is induced in a manner that reduces the magnetic anisotropy of the free layer from a naturally-occurring anisotropy of the free layer.

7. The apparatus of claim 6 , wherein the reduced magnetic anisotropy of the free layer causes a reduction in a switching current of the MTJ.

8. The apparatus of claim 5 , wherein the means for applying the first voltage across the MTJ is configured to apply the first voltage between the substantially planar spin hall-effect material and an MTJ electrode.

9. The apparatus of claim 5 , wherein at least a part of the means for applying the voltage across the MTJ is integrated on a semiconductor die.

10. The apparatus of claim 5 , further comprising at least one of a mobile device, a base station, a terminal, a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant, a fixed location data unit, or a computer, of which the means for applying the voltage across the MTJ is a constituent part.

11. An apparatus, comprising:
a memory controller configured to write data to a three-terminal spin-orbit-torque magnetoresistive memory having a magnetic tunnel junction (MTJ) including a free layer located between an oxide barrier layer and a substantially planar spin hall-effect material,
wherein the memory controller is configured to apply a first voltage across the MTJ to reduce a magnetic anisotropy of the free layer by inducing an electric field across the oxide barrier layer; and
wherein the memory controller is configured to apply a second voltage across the substantially planar spin hall-effect material while the first voltage is applied across the MTJ to cause a current to flow through the substantially planar spin hall-effect material and thereby apply a spin-orbit torque to the free layer, thus causing the free layer to switch between a parallel state and an antiparallel state through spin accumulation on a surface of the substantially planar spin hall-effect material.

12. The apparatus of claim 11 , wherein the memory controller is configured to induce the electric field in a manner that reduces the magnetic anisotropy of the free layer from a naturally-occurring anisotropy of the free layer.

13. The apparatus of claim 12 , wherein the reduced magnetic anisotropy of the free layer causes a reduction in a switching current of the MTJ.

14. The apparatus of claim 11 , wherein the memory controller is configured to apply the first voltage across the MTJ between the substantially planar spin hall-effect material and an MTJ electrode.

15. The apparatus of claim 11 , wherein at least a part of the memory controller is integrated on a semiconductor die.

16. The apparatus of claim 11 , further comprising at least one of a base station or a mobile device, with which the memory controller is integrated.

17. The apparatus of claim 11 , further comprising at least one of a mobile device, a base station, a terminal, a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant, a fixed location data unit, or a computer, of which the memory controller is a constituent part.

18. A non-transitory computer-readable medium, comprising:
fabrication device-executable instructions stored thereon configured to cause a fabrication device to fabricate at least a part of an integrated circuit including a memory controller configured to write data to a three-terminal spin-orbit-torque magnetoresistive memory having a magnetic tunnel junction (MTJ) including a free layer located between an oxide barrier layer and a substantially planar spin hall-effect material,
wherein the memory controller is configured to apply a first voltage across the MTJ to reduce a magnetic anisotropy of the free layer by inducing an electric field across the oxide barrier layer; and
wherein the memory controller is configured to apply a second voltage across the substantially planar spin hall-effect material while the first voltage is applied across the MTJ to cause a current to flow through the substantially planar spin hall-effect material and thereby apply a spin-orbit torque to the free layer, thus causing the free layer to switch between a parallel state and an antiparallel state through spin accumulation on a surface of the substantially planar spin hall-effect material.

19. The non-transitory computer-readable medium of claim 18 , wherein the memory controller is configured to induce the electric field in a manner that reduces the magnetic anisotropy of the free layer from a naturally-occurring anisotropy of the free layer.

20. The non-transitory computer-readable medium of claim 19 , wherein the reduced magnetic anisotropy of the free layer causes a reduction in a switching current of the MTJ.

21. The non-transitory computer-readable medium of claim 18 , wherein the memory controller is configured to apply the first voltage across the MTJ between the substantially planar spin hall-effect material and an MTJ electrode.

Assignees

• Qualcomm Inc

Inventors

• Lee Kangho
• Kan Jimmy
• Kang Seung Hyuk

Classifications

• H01L43/12

  Electricity · mapped topic

• G11C11/1675 Primary

  Writing or programming circuits or methods · CPC title

• H01L43/02

  Electricity · mapped topic

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/08

  Electricity · mapped topic