Copper alloy for electronic equipment, method for producing copper alloy for electronic equipment, rolled copper alloy material for electronic equipment, and part for electronic equipment

US9587299B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9587299-B2
Application numberUS-201214349937-A
CountryUS
Kind codeB2
Filing dateOct 26, 2012
Priority dateOct 28, 2011
Publication dateMar 7, 2017
Grant dateMar 7, 2017

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  2. Abstract

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  5. First independent claim

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Abstract

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This copper alloy for electronic devices includes Mg at a content of 3.3 at % or more and 6.9 at % or less, with a remainder substantially being Cu and unavoidable impurities. When a concentration of Mg is given as X at %, an electrical conductivity σ (% IACS) is in a range of σ≦{1.7241/(−0.0347×X 2 +0.6569×X+1.7)}×100, and a stress relaxation rate at 150° C. after 1,000 hours is in a range of 50% or less.

First claim

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The invention claimed is: 1. A rolled copper alloy material for electronic devices, consisting of: a binary alloy of Cu and Mg, wherein the binary alloy is a Cu—Mg solid solution alloy supersaturated with Mg, the binary alloy consists of Mg at a content of 3.3 at % or more and 6.9 at % or less, and a remainder of Cu and unavoidable impurities, an amount of Zn as an unavoidable impurity is less than 0.01 mass %, a total amount of the unavoidable impurities is in a range of 0.3 mass % or less, the rolled copper alloy material is a sheet or a strip, the binary alloy has a measured value of electrical conductivity, σ, in a range of 31.2-44.1% IACS, wherein the measured value of electrical conductivity is less than or equal to an upper limit of electrical conductivity, in %, calculated by the formulaic expression, {1.7241/(−0.0347×X 2 +0.6569×X+1.7)}×100, wherein X is the content of the Mg in the binary alloy; a stress relaxation rate is in a range of 50% or less after heating at 150° C. for 1,000 hours, and a 0.2% proof stress σ 0.2 in a direction parallel to a rolling direction is in a range of 400 MPa or more. 2. The rolled copper alloy material for electronic devices according to claim 1 , wherein an average number of intermetallic compounds mainly containing Cu and Mg and having grain sizes of 0.1 μm or greater is in a range of 1 piece/μm 2 or less during observation by a scanning electron microscope. 3. The rolled copper alloy material for electronic devices according to claim 1 , wherein a Young's modulus E in a direction parallel to a rolling direction is in a range of 125 GPa or less. 4. The rolled copper alloy material for electronic devices according to claim 1 , wherein the rolled copper alloy material is used as a copper material included in a part for a terminal, a connector, a relay, or a lead frame. 5. A part for electronic devices, comprising the rolled copper alloy material according to claim 1 . 6. The rolled copper alloy material for electronic devices according to claim 2 , wherein a Young's modulus E in a direction parallel to a rolling direction is in a range of 125 GPa or less. 7. The rolled copper alloy material for electronic devices according to claim 2 , wherein the rolled copper alloy material is used as a copper material included in a part for a terminal, a connector, a relay, or a lead frame. 8. A part for electronic devices, comprising the rolled copper alloy material according to claim 2 . 9. A method for producing a rolled copper alloy material for electronic devices, the method comprising: a heating process of heating an ingot consisting of a binary alloy of Cu and Mg at a temperature of 400 to 900° C. to obtain a copper material; a first rapid cooling process of cooling the copper material; an intermediate heat treatment process of heating the copper material; a second rapid cooling process of cooling the copper material; a finishing working process of subjecting the copper material to rolling into a predetermined shape; a finishing heat treatment process of subjecting the copper material to a heat treatment after the finishing working process; and a third rapid cooling process of cooling the copper material, wherein in the first, second and third rapid cooling processes, the copper material is cooled to a temperature of 200° C. or lower at a cooling rate of 200° C./min or higher, wherein the produced rolled copper alloy material consists of the binary alloy of Cu and Mg, the rolled alloy material is a solution alloy supersaturated with Mg, the binary alloy consists of Mg at a content of 3.3 at % or more and 6.9 at % or less, and a remainder of Cu and unavoidable impurities, an amount of Zn as an unavoidable impurity is less than 0.01 mass %, a total amount of the unavoidable impurities is in a range of 0.3 mass % or less, the rolled copper alloy material is a sheet or a strip, the binary alloy has a measured value of electrical conductivity, σ, in a range of 31.2-44.1% IACS, wherein the measured value of electrical conductivity is less than or equal to an upper limit of electrical conductivity, in %, calculated by the formulaic expression, {1.7241/(−0.0347×X 2 +0.6569×X+1.7)}×100, wherein X is the content of the Mg in the binary alloy; a stress relaxation rate of the rolled copper alloy material is in a range of 50% or less after heating at 150° C. for 1,000 hours, and a 0.2% proof stress σ 0.2 of the rolled copper alloy material in a direction parallel to a rolling direction is in a range of 400 MPa or more. 10. The method for producing a rolled copper alloy material for electronic devices according to claim 9 , wherein, in the intermediate heat treatment process, the heat treatment is performed at a temperature of 400° C. or higher and 900° C. or lower, and in the finishing heat treatment process, the heat treatment is performed at a temperature of higher than 200° C. and 800° C. or lower. 11. A method for producing a rolled copper alloy material for electronic devices, the method comprising: a heating process of heating an ingot consisting of a binary alloy of Cu and Mg at a temperature of 400 to 900° C. to obtain a copper material; a first rapid cooling process of cooling the copper material; an intermediate heat treatment process of heating the copper material; a second rapid cooling process of cooling the copper material; a finishing working process of subjecting the copper material to rolling into a predetermined shape; a finishing heat treatment process of subjecting the copper material to a heat treatment after the finishing working process; and a third rapid cooling process of the cooling copper material, wherein in the first, second and third rapid cooling processes, the copper material is cooled to a temperature of 200° C. or lower at a cooling rate of 200° C./min or higher, wherein the produced rolled copper alloy material consists of the binary alloy of Cu and Mg, the rolled copper alloy material is a Cu—Mg solid solution alloy supersaturated with Mg, the binary alloy consists of Mg at a content of 3.3 at % or more and 6.9 at % or less, and a remainder of Cu and unavoidable impurities, an amount of Zn as an unavoidable impurity is less than 0.01 mass %, a total amount of the unavoidable impurities is in a range of 0.3 mass % or less, the rolled copper alloy material is a sheet or a strip, the binary alloy has a measured value of electrical conductivity, σ, in a range of 31.2-44.1% IACS, wherein the measured value of electrical conductivity is less than or equal to an upper limit of electrical conductivity, in %, calculated by the formulaic expression, {1.7241/(−0.0347×X 2 +0.6569×X+1.7)}×100, wherein X is the content of the Mg in the binary alloy; a stress relaxation rate of the rolled copper alloy material is in a range of 50% or less after heating at 150° C. for 1,000 hours, a 0.2% proof stress σ 0.2 of the rolled copper alloy material in a direction parallel to a rolling direction is in a range of 400 MPa or more, and an average number of intermetallic compounds mainly containing Cu and Mg and having grain sizes of 0.1 μm or greater in the rolled copper alloy material is in a range of 1 piece/μm 2 or less during observation by a scanning electron microscope. 12. The method for producing a rolled copper alloy material for electronic devices according to claim 11 , wherein in the intermediate heat treatment process, the heat treatment is performed at a temperature of 400° C. or higher and 900° C. or lower, and in the finishing heat treatment process, the heat treatment is performed at a temperature of higher than 200° C. and 800° C. or lower.

Assignees

Inventors

Classifications

  • for heat treatment · CPC title

  • Alloys based on copper · CPC title

  • C22F1/08Primary

    of copper or alloys based thereon · CPC title

  • with tin as the next major constituent · CPC title

  • with manganese as the next major constituent · CPC title

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What does patent US9587299B2 cover?
This copper alloy for electronic devices includes Mg at a content of 3.3 at % or more and 6.9 at % or less, with a remainder substantially being Cu and unavoidable impurities. When a concentration of Mg is given as X at %, an electrical conductivity σ (% IACS) is in a range of σ≦{1.7241/(−0.0347×X 2 +0.6569×X+1.7)}×100, and a stress relaxation rate at 150° C. after 1,000 hours is in a range of …
Who is the assignee on this patent?
Mitsubishi Materials Corp
What technology area does this patent fall under?
Primary CPC classification C22F1/08. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 07 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).