High breakdown voltage microelectronic device isolation structure with improved reliability

Patent metadata

Field	Value
Publication number	US-9583558-B2
Application number	US-201615045421-A
Country	US
Kind code	B2
Filing date	Feb 17, 2016
Priority date	May 15, 2014
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

A microelectronic device contains a high voltage component having a high voltage node and a low voltage node. The high voltage node is isolated from the low voltage node by a main dielectric between the high voltage node and low voltage elements at a surface of the substrate of the microelectronic device. A lower-bandgap dielectric layer is disposed between the high voltage node and the main dielectric. The lower-bandgap dielectric layer contains at least one sub-layer with a bandgap energy less than a bandgap energy of the main dielectric. The lower-bandgap dielectric layer extends beyond the high voltage node continuously around the high voltage node. The lower-bandgap dielectric layer has an isolation break surrounding the high voltage node at a distance of at least twice the thickness of the lower-bandgap dielectric layer from the high voltage node.

First claim

What is claimed is:

1. A method, comprising:
forming a first voltage node of a high voltage component of a microelectronic device;
forming a main dielectric layer at least 2 microns thick above the first voltage node;
forming a lower-bandgap dielectric layer above the main dielectric layer opposite from the first voltage node, the lower-bandgap dielectric layer comprising a first sub-layer having lower bandgap energy than a portion of the main dielectric layer;
forming a second voltage node of the high voltage component above the lower-bandgap dielectric layer; and
defining an isolation break in the lower-bandgap dielectric layer, the isolation break laterally surrounding the second voltage node and extending beyond the second voltage node by a distance at least twice a thickness of the lower-bandgap dielectric layer, the isolation break dividing the lower-bandgap dielectric layer into discontinuous portions.

2. The method of claim 1 , wherein the forming the lower-bandgap dielectric layer further comprises forming a second sub-layer disposed between the first sub-layer and the second voltage node, the second sub-layer having lower bandgap energy than the first sub-layer.

3. The method of claim 2 , wherein:
the portion of the main dielectric layer adjacent to the lower-bandgap dielectric layer comprises silicon dioxide-based dielectric material;
the first sub-layer comprises silicon oxide nitride; and
the second sub-layer comprises silicon nitride.

4. The method of claim 1 , wherein the high voltage component includes a high voltage capacitor having an upper plate and a lower plate, the upper plate includes the second voltage node, and the lower plate includes the first voltage node.

5. The method of claim 1 , wherein the main dielectric layer comprises a plurality of IMD layers silicon dioxide-based dielectric material.

6. The method of claim 1 , further comprising forming a low voltage component disposed outside of the isolation break surrounding an inner portion of the lower-bandgap dielectric layer.

7. The method of claim 6 , wherein the low voltage component includes a MOS transistor having a gate dielectric layer less than 70 nanometers thick.

8. The method of claim 1 , wherein:
the forming the lower-bandgap dielectric layer comprises forming the first sub-layer over the main dielectric layer; and
the forming the isolation break comprises removing the first sub-layer in an area defined by the isolation break and leaving a portion of the lower-bandgap dielectric layer unremoved outside of the isolation break.

9. The method of claim 8 , wherein the portion of the lower-bandgap dielectric layer remained outside of the isolation break contacts a low voltage element of the microelectronic device.

10. The method of claim 1 , further comprising forming a barrier on an edge of the lower-bandgap dielectric layer and within the isolation break.

11. A method, comprising:
forming a lower plate above a substrate;
forming a first dielectric layer on the lower plate, the first dielectric layer having a first bandgap energy;
forming a second dielectric layer on the first dielectric layer, the second dielectric layer having a second bandgap energy lower than the first bandgap energy;
defining an isolation ring in the second dielectric layer to separate the second dielectric layer into a first portion co-extending with the lower plate and a second portion free of overlapping with the lower plate; and
forming an upper plate on the first portion of the second dielectric layer to establish a capacitor with the lower plate.

12. The method of claim 11 , further comprising:
forming a pre-metal dielectric layer on the substrate,
wherein the forming the lower plate includes forming the lower plate on the pre-metal dielectric layer.

13. The method of claim 11 , wherein the forming the second dielectric layer includes:
forming a first sub-layer on the first dielectric layer, the first sub-layer having the first bandgap energy;
forming a second sub-layer on the first sub-layer, the second sub-layer having a third bandgap energy lower than the second bandgap energy.

14. The method of claim 11 , wherein the second dielectric layer includes a silicon nitride layer.

15. The method of claim 11 , wherein the second dielectric layer includes a silicon oxynitride layer.

16. The method of claim 11 , wherein the forming the second dielectric layer includes:
forming a silicon oxynitride layer on the first dielectric layer;
forming a silicon nitride layer on the silicon oxynitride layer.

17. The method of claim 11 , wherein the first portion of the second dielectric layer extends beyond the lower plate.

18. The method of claim 11 , wherein the first dielectric layer has a thickness of at 2 microns.

19. The method of claim 11 , wherein the upper plate is smaller than the lower plate.

20. The method of claim 11 , further comprising:
forming a circuit under the second portion of the second dielectric layer, the circuit coupled to an interconnect layer for receiving a first voltage; and
forming a bond pad on the upper plate for receiving a second voltage substantially higher than the first voltage.

Assignees

• Texas Instruments Inc

Inventors

• West Jeffrey Alan
• Bonifield Thomas D
• Williams Byron Lovell

Classifications

• H10D84/813

  Combinations of field-effect devices and capacitor only · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title