Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles

Patent metadata

Field	Value
Publication number	US-9583369-B2
Application number	US-201314034315-A
Country	US
Kind code	B2
Filing date	Sep 23, 2013
Priority date	Jul 20, 2013
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less.

First claim

What is claimed is:

1. A chamber component for a processing chamber comprising:
a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches; and
a conformal protective layer on the at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film selected from a group consisting of Y 4 Al 2 O 9 , Er 2 O 3 ,Gd 2 O 3 , YF 3 , Er 4 Al 2 O 9 , ErAlO 3 , Gd 4 Al 2 O 9 , GdAlO 3 , Nd 4 Al 2 O 9 , NdAlO 3 , a first ceramic compound comprising a mixture of Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 , and a second ceramic compound comprising a mixture of Y 2 O 3 , ZrO 2 , Er 2 O 3 , Gd 2 O 3 and SiO 2 , the conformal protective layer having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

2. The chamber component of claim 1 , wherein the conformal protective layer has a thickness of 10-30 μm.

3. The chamber component of claim 1 , wherein the conformal protective layer is the first ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 , wherein the ceramic compound has a composition selected from a list consisting of:
40 mol % to below 100 mol % of Y 2 O 3 , above 0 mol % to 60 mol % of ZrO 2 , and above 0 mol % to 10 mol % of Al 2 O 3 ;
40 mol % to 60 mol % of Y 2 O 3 , 30 mol % to 50 mol % of ZrO 2 , and 10 mol % to 20 mol % of Al 2 O 3 ;
40 mol % to 50 mol % of Y 2 O 3 , 20 mol % to 40 mol % of ZrO 2 , and 20 mol % to 40 mol % of Al 2 O 3 ;
70 mol % to below 90 mol % of Y 2 O 3 , above 0 mol % to 20 mol % of ZrO 2 , and 10 mol % to 20 mol % of Al 2 O 3 ;
60 mol % to below 80 mol % of Y 2 O 3 , above 0 mol % to 10 mol % of ZrO 2 , and 20 mol % to 40 mol % of Al 2 O 3 ; and
40 mol % to below 60 mol % of Y 2 O 3 , above 0 mol % to 20 mol % of ZrO 2 , and 30 mol % to 40 mol % of Al 2 O 3 .

4. The chamber component of claim 1 , wherein the conformal protective layer has a composition of 40-45 mol % of Y 2 O 3 , 5-10 mol % of ZrO 2 , 35-40 mol % of Er 2 O 3 , 5-10 mol % of Gd 2 O 3 , and 5-15 mol % of SiO 2 .

5. The chamber component of claim 1 , wherein a porosity of the conformal protective layer is below 1%.

6. The chamber component of claim 1 , wherein the conformal protective layer has a post polished roughness of less than 8 micro-inches.

7. The chamber component of claim 1 , wherein the ceramic body is a bulk sintered ceramic body comprising at least one of Y 2 O 3 or the ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 .

8. The chamber component of claim 1 , where the conformal protective layer comprises a conformal protective layer stack comprising a first plasma resistant rare earth oxide film on the at least one surface and a second plasma resistant rare earth oxide film on the first plasma resistant rare earth oxide film, wherein the first plasma resistant rare earth oxide film comprises a coloring agent that causes the first plasma resistant rare earth oxide film to have a different color than the second plasma resistant rare earth oxide film.

9. The chamber component of claim 8 , wherein the coloring agent comprises at least one of Sm 2 O 3 or Er 2 O 3 .

10. The chamber component of claim 1 , where the chamber component is a nozzle.

11. A plasma resistant lid or nozzle for a processing chamber comprising a ceramic body and a conformal protective layer on at least one surface of the ceramic body, the lid or nozzle having been manufactured by a process comprising:
providing the lid or nozzle having a first average surface roughness of approximately 8-16 micro-inches;
performing electron beam ion assisted deposition to deposit the conformal protective layer on the at least one surface of the lid or nozzle, the conformal protective layer having the first average surface roughness after deposition, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 50 μm over the at least one surface, and wherein the conformal protective layer is selected from a group consisting of Y 4 Al 2 O 9 , Er 2 O 3 , Gd 2 O 3 , Nd 2 O 3 , YF 3 , Er 4 Al 2 O 9 , ErAlO 3 , Gd 4 Al 2 O 9 , GdAlO 3 , Nd 4 Al 2 O 9 , NdAlO 3 , a first ceramic compound comprising of a mixture of Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 , and a second ceramic compound comprising a mixture of Y 2 O 3 , ZrO 2 , Er 2 O 3 , Gd 2 O 3 , and SiO 2 ; and
polishing the conformal protective layer to a second average surface roughness of below 10 micro-inches.

Assignees

• Applied Materials Inc

Inventors

• Sun Jennifer Y
• Kanungo Biraja P
• Firouzdor Vahid
• Zhang Ying

Classifications

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P72/0418

  for etching · CPC title

• H10P72/0404 Primary

  for general liquid treatment, e.g. etching followed by cleaning · CPC title