Electronic component metal material and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9580783-B2
Application number	US-201214432978-A
Country	US
Kind code	B2
Filing date	Oct 31, 2012
Priority date	Oct 4, 2011
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

There are provided an electronic component metal material which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The electronic component metal material 10 includes a base material 11 , an A layer 14 constituting an outermost surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer) 14 has a thickness of 0.002 to 0.2 μm, and the middle layer (B layer) 13 has a thickness larger than 0.3 μm.

First claim

The invention claimed is:

1. An electronic component metal material having low whisker formability and high durability, comprising:
a base material;
an A layer constituting an outermost surface layer on the base material and being formed of Sn, In or an alloy thereof;
a B layer constituting a middle layer provided between the base material and the A layer and being formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, and satisfying the following (a) or (b):
(a) wherein the outermost surface layer (A layer) has a thickness of 0.002 to 0.2 μm; and the middle layer (B layer) has a thickness larger than 0.3 μm,
(b) wherein the outermost surface layer (A layer) has a deposition amount of Sn, In of 1 to 150 μg/cm 2 ; and
the middle layer (B layer) has a deposition amount of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir of larger than 330 μg/cm 2 , and
(c) wherein the outermost surface layer (A layer) has a surface arithmetic average height (RA) of 0.1 μm or lower.

2. The electronic component metal material according to claim 1 , wherein the outermost surface layer (A layer) has an alloy composition comprising 50 mass % or more of Sn, In or a total of Sn and In, and the other alloy component(s) comprising one or two or more metals selected from the group consisting of Ag, As, Au, Bi, Cd, Co, Cr, Cu, Fe, Mn, Mo, Ni, Pb, Sb, W, and Zn.

3. The electronic component metal material according to claim 1 , wherein the middle layer (B layer) has an alloy composition comprising 50 mass % or more of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or a total of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir, and the other alloy component(s) comprising one or two or more metals selected from the group consisting of Bi, Cd, Co, Cu, Fe, In, Mn, Mo, Ni, Pb, Sb, Se, Sn, W, Tl, and Zn.

4. The electronic component metal material according to claim 1 , wherein the outermost surface layer (A layer) has a surface maximum height (Rz) of 1 μm or lower.

5. The electronic component metal material according to claim 1 , wherein when a depth analysis by X-ray photoelectron spectroscopy (XPS) is carried out, a position (D 1 ) where an atomic concentration (at %) of Sn or In in the outermost surface layer (A layer) is a maximum value and a position (D 2 ) where an atomic concentration (at %) of Ag, Au, Pt, Pd, Ru, Rh, Os or Ir in the middle layer (B layer) is a maximum value are present in the order of D 1 and D 2 from the outermost surface.

6. The electronic component metal material according to claim 1 , wherein when a depth analysis by X-ray photoelectron spectroscopy (XPS) is carried out, the outermost surface layer (A layer) has a maximum value of an atomic concentration (at %) of Sn or In of 10 at % or higher.

7. The electronic component metal material according to claim 1 , further comprising a C layer provided between the base material and the B layer and constituting an underlayer, and formed of one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu.

8. The electronic component metal material according to claim 7 , wherein the underlayer (C layer) has an alloy composition comprising 50 mass % or more of a total of Ni, Cr, Mn, Fe, Co, and Cu, and further comprising one or two or more selected from the group consisting of B, P, Sn, and Zn.

9. The electronic component metal material according to claim 7 , wherein when a depth analysis by X-ray photoelectron spectroscopy (XPS) is carried out, a position (D 1 ) where an atomic concentration (at %) of Sn or In in the outermost surface layer (A layer) is a maximum value, a position (D 2 ) where an atomic concentration (at %) of Ag, Au, Pt, Pd, Ru, Rh, Os or Ir in the middle layer (B layer) is a maximum value and a position (D 3 ) where an atomic concentration (at %) of Ni, Cr, Mn, Fe, Co or Cu in the underlayer (C layer) is a maximum value are present in the order of D 1 , D 2 and D 3 from the outermost surface.

10. The electronic component metal material according to claim 7 , wherein when a depth analysis by X-ray photoelectron spectroscopy (XPS) is carried out, the outermost surface layer (A layer) has a maximum value of an atomic concentration (at %) of Sn or In of 10 at % or higher; and a depth where the underlayer (C layer) has an atomic concentration (at %) of Ni, Cr, Mn, Fe, Co or Cu of 25% or higher is 50 nm or more.

11. The electronic component metal material according to claim 7 , wherein the underlayer (C layer) has a thickness of 0.05 μm or larger.

12. The electronic component metal material according to claim 7 , wherein the underlayer (C layer) has a deposition amount of Ni, Cr, Mn, Fe, Co, Cu of 0.03 mg/cm 2 or larger.

13. The electronic component metal material according to claim 1 , wherein the outermost surface layer (A layer) has a thickness of 0.01 to 0.1 μm.

14. The electronic component metal material according to claim 1 being free in whiskers, wherein the outermost surface layer (A layer) has a deposition amount of Sn, In of 7 to 75 μg/cm 2 .

15. The electronic component metal material according to claim 1 , wherein the middle layer (B layer) has a thickness larger than 0.3 μm and 0.6 μm or smaller.

16. The electronic component metal material according to claim 1 , wherein the middle layer (B layer) has a deposition amount of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir of larger than 330 μg/cm 2 and 660 μg/cm 2 or smaller.

17. The electronic component metal material according to claim 1 , wherein when an elemental analysis of a surface of the outermost surface layer (A layer) is carried out by a survey measurement by X-ray photoelectron spectroscopy, (XPS) a content of Sn, In is 2 at % or higher.

18. The electronic component metal material according to claim 1 , wherein when an elemental analysis of a surface of the outermost surface layer (A layer) is carried out by a survey measurement by X-ray photoelectron spectroscopy, (XPS) a content of Ag, Au, Pt, Pd, Ru, Rh, Os or Ir is lower than 7 at %.

19. The electronic component metal material according to claim 1 , wherein when an elemental analysis of a surface of the outermost surface layer (A layer) is carried out by a survey measurement by X-ray photoelectron spectroscopy (XPS), a content of O is lower than 50 at %.

20. A connector terminal comprising an electronic component metal material according to claim 1 for a contact portion.

21. An FFC terminal comprising an electronic component metal material according to claim 1 for a contact portion.

22. An FPC terminal comprising an electronic component metal material according to claim 1 for a contact portion.

23. An electronic component comprising an electronic component metal material according to claim 1 for an electrode for external connection of the electronic component.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Shibuya Yoshitaka
• Fukamachi Kazuhiko
• Kodama Atsushi

Classifications

• C25D3/50

  of platinum group metals · CPC title

• C25D3/20

  of iron · CPC title

• C25D5/12

  at least one layer being of nickel or chromium · CPC title

• C25D3/46

  of silver · CPC title

• C25D5/505

  of electroplated tin coatings, e.g. by melting · CPC title