MEMS device and method of making a MEMS device

US9580299B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9580299-B2
Application numberUS-201514971879-A
CountryUS
Kind codeB2
Filing dateDec 16, 2015
Priority dateApr 4, 2012
Publication dateFeb 28, 2017
Grant dateFeb 28, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A MEMS device and a method of making a MEMS device are disclosed. In one embodiment a semiconductor device comprises a substrate, a moveable electrode and a counter electrode, wherein the moveable electrode and the counter electrode are mechanically connected to the substrate. The movable electrode is configured to stiffen an inner region of the movable membrane.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor device comprising: a substrate; a moveable electrode comprising a corrugation line, the corrugation line configured to stiffen an inner region of the moveable electrode; and a first counter electrode, wherein the moveable electrode and the first counter electrode are mechanically connected to the substrate. 2. The semiconductor device according to claim 1 , wherein the corrugation line comprises a plurality of radial corrugation lines. 3. The semiconductor device according to claim 2 , wherein the moveable electrode further comprises a circumferential corrugation line. 4. The semiconductor device according to claim 3 , wherein the radial corrugation lines are located in an inner region of the moveable electrode, and wherein the circumferential corrugation line is located in an outer region of the moveable electrode. 5. The semiconductor device according to claim 1 , wherein the moveable electrode and the first counter electrode comprise a plurality of electrodes. 6. The semiconductor device according to claim 1 , further comprising a second counter electrode, the second counter electrode arranged such that the moveable electrode is located between the first counter electrode and the second counter electrode. 7. The semiconductor device according to claim 6 , wherein the first counter electrode comprises first corrugation lines, and wherein the second counter electrode comprises second corrugation lines. 8. A MEMS structure comprising: a substrate; a moveable electrode comprising radial corrugation lines in an inner region and circular corrugation lines in an outer region; and a first perforated counter electrode comprising first ridges, wherein the moveable electrode and the first perforated counter electrode are mechanically connected to the substrate. 9. The MEMS structure according to claim 8 , wherein moveable electrode is arranged below the first perforated counter electrode closer to the substrate. 10. The MEMS structure according to claim 8 , wherein the first perforated counter electrode is arranged below the moveable electrode closer to the substrate. 11. The MEMS structure according to claim 8 , further comprising a second perforated counter electrode comprising second ridges, and wherein the moveable electrode is arranged between the first perforated counter electrode and the second perforated counter electrode. 12. The MEMS structure according to claim 8 , wherein the first perforated counter electrode comprises a first counter electrode and a second counter electrode, wherein the first counter electrode is in register with the inner region of the moveable electrode, and wherein the second counter electrode is in register with the outer region of the moveable electrode. 13. The MEMS structure according to claim 12 , wherein the moveable electrode comprises a first moveable electrode and a second moveable electrode, wherein the inner region comprise the first moveable electrode, and wherein the outer region comprises the second moveable electrode. 14. The MEMS structure according to claim 8 , wherein moveable electrode comprises a radius, wherein an inner area of the inner region is defined by about 80% of the radius, and wherein an outer area of the outer region is defined by about 20% of the radius. 15. A method of making an electrode of a MEMS device, the method comprising: forming trenches in a first sacrificial layer, each trench has substantially the same depth; forming a second sacrificial layer lining a top surface of the first sacrificial layer, sidewalls and a bottom surface of the trenches; forming a conductive material layer over a top surface of the second sacrificial layer and filling the trenches; removing a first portion of the first sacrificial layer forming a first spacer; and removing a second portion of the second sacrificial layer forming a second spacer thereby exposing the conductive material layer. 16. The method according to claim 15 , wherein forming the conductive material layer comprises forming fin lines, and wherein two parallel fin lines are connected via a connecting fin line. 17. The method according to claim 15 , wherein forming the conductive material layer comprises forming fin lines, and wherein the fin lines form a honeycomb configuration. 18. A method of making an electrode of a MEMS device, the method comprising: forming a first sacrificial layer over a substrate; forming mesas in the first sacrificial layer; forming a second sacrificial layer over the mesas; forming a conductive layer over the second sacrificial layer and the mesas; removing a first portion of the substrate forming a first spacer; removing a second portion of the second sacrificial layer forming a second spacer; and removing the mesas. 19. The method according to claim 18 , wherein the mesas are radial mesas leading away from a central point of the substrate. 20. The method according to claim 19 , further comprising circumferential mesas, wherein the radial mesas are supported by an inner region of the substrate, and wherein the circumferential mesas are supported by an outer region of the substrate.

Assignees

Inventors

Classifications

  • comprising a plurality of sections or layers · CPC title

  • Constitution or structural means for controlling the movement of the flexible or deformable elements · CPC title

  • For defining the movement, i.e. structures that guide or limit the movement of an element (mechanical arrangements for preventing or damping vibration or shock H01H3/60) · CPC title

  • Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators · CPC title

  • B81B3/007Primary

    For controlling stiffness, e.g. ribs · CPC title

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Frequently asked questions

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What does patent US9580299B2 cover?
A MEMS device and a method of making a MEMS device are disclosed. In one embodiment a semiconductor device comprises a substrate, a moveable electrode and a counter electrode, wherein the moveable electrode and the counter electrode are mechanically connected to the substrate. The movable electrode is configured to stiffen an inner region of the movable membrane.
Who is the assignee on this patent?
Infineon Technologies Ag
What technology area does this patent fall under?
Primary CPC classification B81B3/007. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Feb 28 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).