MEMS device and method of making a MEMS device

Patent metadata

Field	Value
Publication number	US-9409763-B2
Application number	US-201213439729-A
Country	US
Kind code	B2
Filing date	Apr 4, 2012
Priority date	Apr 4, 2012
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

A MEMS device and a method of making a MEMS device are disclosed. In one embodiment a semiconductor device comprises a substrate, a moveable electrode and a counter electrode, wherein the moveable electrode and the counter electrode are mechanically connected to the substrate. The movable electrode is configured to stiffen an inner region of the movable membrane.

First claim

What is claimed is:

1. A method of making an electrode of a MEMS device, the method comprising:
forming elongated radial openings in a mask layer, the mask layer disposed over a first sacrificial layer, the elongated radial openings exposing first surface portions of the first sacrificial layer, the elongated radial openings leading away from a center point of the first sacrificial layer;
forming first elongated isolation regions at the exposed first surface portions;
forming a second sacrificial layer over the first sacrificial layer;
forming a conductive layer over the second sacrificial layer;
removing a first portion of the first sacrificial layer forming a first spacer; and
removing a second portion of the second sacrificial layer forming a second spacer.

2. The method according to claim 1 , wherein forming first elongated isolation regions comprises oxidizing or nitriding the exposed first surface portions.

3. The method according to claim 1 , further comprising removing the mask layer and the first elongated isolation regions before forming the second sacrificial layer.

4. The method according to claim 1 , wherein the elongated radial openings are located in an inner region of the first sacrificial layer.

5. The method according to claim 1 , further comprising forming radial openings in an outer region of the first sacrificial layer, wherein the elongated radial openings and the radial openings all have substantially the same width.

6. The method according to claim 1 , further comprising forming circumferential openings thereby exposing second surface portions of the first sacrificial layer, and forming second isolation regions at the second surface portions.

7. The method according to claim 6 , wherein the elongated radial openings are disposed in an inner region of the mask layer, and wherein the circumferential openings are disposed in an outer region of the mask layer.

8. A method of making an electrode of a MEMS device, the method comprising:
forming first elongated isolation regions at a surface of a first sacrificial layer, wherein the first elongated isolation regions radiate away from a center point of the first sacrificial layer;
forming a second sacrificial layer over the first sacrificial layer;
forming a conductive layer over the second sacrificial layer;
removing a portion of the first sacrificial layer thereby forming a first spacer; and
removing a portion of the second sacrificial layer thereby forming a second spacer and thereby exposing a portion of the conductive layer.

9. The method according to claim 8 , wherein the first elongated isolation regions are disposed in an inner region of the first sacrificial layer.

10. The method according to claim 9 , further comprising forming second elongated isolation regions in the first sacrificial layer, wherein the second elongated isolation regions are disposed circumferential to the center point of the first sacrificial layer.

11. The method according to claim 10 , wherein the second elongated isolation regions are disposed in an outer region of the first sacrificial layer.

12. The method according to claim 11 , further comprising removing the first and second isolation regions.

13. The method according to claim 12 , further comprising forming the first and second isolation regions by an thermal oxidation process.

14. The method according to claim 8 , wherein removing the portion of the first sacrificial layer comprises applying a Bosch process.

15. The method according to claim 8 , wherein removing the portion of the second sacrificial layer comprises applying a wet chemical etch.

16. The method according to claim 8 , wherein the first sacrificial layer comprises a bulk mono-crystalline silicon substrate layer, a {110} silicon layer, a {100} silicon layer.

17. The method according to claim 8 , wherein the first sacrificial layer comprises a compound semiconductor substrate.

18. A method of making a MEMS device, the method comprising:
forming a moveable electrode, wherein the moveable electrode comprises radial corrugation lines radiating away from a center point of the moveable electrode; and
forming a perforated counter electrode comprising first ridges, wherein the moveable electrode and the perforated counter electrode are mechanically supported by a substrate.

19. The method according to claim 18 , wherein moveable electrode is arranged below the perforated counter electrode closer to the substrate.

20. The method according to claim 18 , wherein the moveable electrode comprises a first moveable electrode and a second moveable electrode, wherein the radial corrugation lines are disposed in the first electrode.

21. The method according to claim 20 , wherein moveable electrode comprises a radius, wherein the first moveable electrode is defined by about 80% of the radius, and wherein the second moveable electrode is defined by about 20% of the radius.

22. The method according to claim 18 , wherein forming the moveable electrode comprises:
forming first elongated isolation regions at a surface of a first sacrificial layer, wherein the first elongated isolation regions radiate away from a center point of the first sacrificial layer;
forming a second sacrificial layer over the first sacrificial layer;
forming a conductive layer over the second sacrificial layer;
removing a portion of the first sacrificial layer thereby forming a first spacer; and
removing a portion of the second sacrificial layer thereby forming a second spacer and thereby exposing a portion of the conductive layer.

23. The method according to claim 22 , wherein forming the conductive layer over the second sacrificial layer comprises forming the radial corrugation lines imaging the first elongated isolation regions.

24. The method according to claim 22 , further comprising removing the first elongated isolation regions thereby forming radial corrugation lines in the first sacrificial layer and wherein forming the conducive layer comprises forming radial corrugation lines in the moveable electrode.

25. The method according to claim 22 , further comprising forming second elongated isolation regions in the first sacrificial layer, wherein the second elongated isolation regions are disposed circumferential to the center point of the first sacrificial layer.

26. The method according to claim 1 , further comprising removing the first elongated isolation regions thereby forming radial corrugation lines in the first sacrificial layer and wherein forming the conducive layer comprises forming the radial corrugation lines in the conductive layer.

27. A method of making a movable electrode of a MEMS device, the method comprising:
forming first elongated isolation regions at an inner region but not an outer region of a surface of a first sacrificial layer, wherein the first elongated isolation regions radiate away from a center point of the first sacrificial layer;
removing the first elongated isolation regions thereby forming radial corrugation lines in the first sacrificial layer;
forming a second sacrificial layer over the first sacrificial layer thereby forming the radial corrugation lines in the second sacrificial layer;
forming a conductive layer over the second sacrificial layer thereby forming radial corrugation lines in the conductive layer;
removing a portion of the first sacrificial layer thereby forming a first spacer; and

Assignees

• Dehe Alfons
• Wurzer Martin
• Herzum Christian
• Infineon Technologies Ag

Inventors

• Dehe Alfons
• Wurzer Martin
• Herzum Christian

Classifications

• B81B3/007 Primary

  For controlling stiffness, e.g. ribs · CPC title

• H04R19/005

  using semiconductor materials · CPC title

• B81B3/0035

  Constitution or structural means for controlling the movement of the flexible or deformable elements · CPC title

• B81B2201/0257

  Microphones or microspeakers · CPC title

• H04R19/04

  Microphones (H04R19/01 takes precedence) · CPC title