Light emitting element

Patent metadata

Field	Value
Publication number	US-9577152-B2
Application number	US-201414560224-A
Country	US
Kind code	B2
Filing date	Dec 4, 2014
Priority date	Dec 9, 2013
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

A light emitting element having; a first and a second conductivity type semiconductor layers, a first and a second electrodes formed on the first and second conductivity type semiconductor layer, the first and the second electrodes being disposed on the same face side of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in plan view, the first electrode having a first connecting portion, a first extending portion, and two second extending portions, the second electrode having a second connecting portion and two third extending portions, the first extending portion of the first electrode extending linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extending parallel to the first extending portion on two sides of the first extending portion, the two third extending portions of the second electrode extending parallel to the first extending portion between the first extending portion and the two second extending portions.

First claim

What is claimed is:

1. A light emitting element comprising;
a semiconductor stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer with the second conductivity type semiconductor layer being disposed over the first conductivity type semiconductor layer, the second conductivity type semiconductor layer being a p-type semiconductor layer,
a first electrode formed on the first conductivity type semiconductor layer, and
a second electrode formed on the second conductivity type semiconductor layer,
the first electrode and the second electrode being disposed on the same face side of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
in plan view,
the first electrode and the second electrode are entirely surrounded by the p-type semiconductor layer of the semiconductor stack,
the first electrode having a first connecting portion, a first extending portion, and two second extending portions,
the second electrode having a second connecting portion, two third extending portions, and two fourth extending portions,
the first extending portion extending linearly from the first connecting portion toward the second connecting portion,
the two second extending portions extending parallel to the first extending portion on two sides of the first extending portion,
the two third extending portions each extending parallel to the first extending portion between the first extending portion and the two second extending portions,
the two fourth extending portions each extending on the outside of the second extending portions and parallel to the first extending portion, and being bent toward the first connecting portion at distal ends, with the fourth extending portions each having two bent portions,
each of the distal ends of the fourth extending portions including a portion parallel to a first portion of a corresponding one of the second extending portions on the outside of the corresponding one of the second extending portions, and extending closer to the first connecting portion than an imaginary line that extends along a second portion of the corresponding one of the second extending portions, with the second portion extending parallel to the first extending portion, and
distances between second extending portions and third extending portions adjacent to each other in a direction perpendicular to the first extending portion being shorter than distances between the first extending portion and the respective third extending portions.

2. The light emitting element according to claim 1 , wherein
distances between the first extending portion and the respective second extending portions are the same, and
the distances between the first extending portion and the respective third extending portions are the same.

3. The light emitting element according to claim 1 , wherein
the third extending portion has a distal end that bends toward the first connecting portion, or
the two third extending portions extend to form a U shape.

4. The light emitting element according to claim 1 , wherein
in plan view,
the semiconductor stack is rectangular, and
the first extending portion is parallel to one side of the semiconductor stack.

5. The light emitting element according to claim 1 , wherein
the second extending portions extend from the first connecting portion, and
the third extending portions extend from the second connecting portion.

6. The light emitting element according to claim 1 , wherein
distance between the respective distal ends of the fourth extending portions and the respective second extending portions in the extending direction of the first extending portion is longer than distances between portions of the respective fourth extending portions extending parallel to the first extending portion and the second portions of the respective second extending portions extending parallel to the first extending portion in the direction perpendicular to the first extending portion.

7. The light emitting element according to claim 1 , wherein
the third extending portions extend from the second connecting portion.

8. A light emitting element comprising;
a semiconductor stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer with the second conductivity type semiconductor layer being disposed over the first conductivity type semiconductor layer, the second conductivity type semiconductor layer being a p-type semiconductor layer,
a first electrode formed on the first conductivity type semiconductor layer, and
a second electrode formed on the second conductivity type semiconductor layer,
the first electrode and the second electrode being disposed on the same face side of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
in plan view,
the first electrode and the second electrode are entirely surrounded by the p-type semiconductor layer of the semiconductor stack,
the first electrode having a first connecting portion, a first extending portion, and two second extending portions,
the second electrode having a second connecting portion, and two third extending portions,
the first extending portion extending linearly from the first connecting portion toward the second connecting portion,
the two second extending portions extending parallel to the first extending portion on two sides of the first extending portion, the second extending portions each having two bent portions,
the two third extending portions extending parallel to the first extending portion between the first extending portion and the two second extending portions, and extending to form a U shape,
each of distal ends of the second extending portions including a portion parallel to a first portion of a corresponding one of the third extending portions on the outside of the corresponding one of the third extending portions, and extending closer to the second connecting portion than an imaginary line that extends along a second portion of the corresponding one of the third extending portions, with the second portion extending parallel to the first extending portion, and
in a direction perpendicular to the first extending portion,
distances between the second extending portions and the third extending portions adjacent to each other being shorter than distances between the first extending portion and the respective third extending portions.

9. The light emitting element according to claim 8 , wherein
distances between the first extending portion and the respective second extending portions are the same, and
the distances between the first extending portion and the respective third extending portions are the same.

10. The light emitting element according to claim 8 , wherein
the third extending portion has a distal end that is bent toward the first connecting portion.

11. The light emitting element according to claim 8 , wherein
in plan view,
the semiconductor stack is rectangular, and
the first extending portion is parallel to one side of the semiconductor stack.

12. The light emitting element according to claim 8 , wherein
the second extending portions extend from the first connecting portion, and
the third extending portions extend from the second connecting portion.

13. The light emitting element according to claim 8 , wherein
the second electrode further has fourth extending portions that extend parallel to the first extending portion on the outside of the second extending portions, and
the distal ends of the fourth extending portions are bent toward t

Assignees

• Nichia Corp

Inventors

• Sato Kosuke
• Emura Keiji

Classifications

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• H10H20/83 Primary

  Electrodes · CPC title

• H01L33/387 Primary

  Electricity · mapped topic

• H01L33/38

  Electricity · mapped topic

• H10H20/831 Primary

  characterised by their shape · CPC title