Colloidal semiconducting structure

Patent metadata

Field	Value
Publication number	US-9577125-B2
Application number	US-201414258696-A
Country	US
Kind code	B2
Filing date	Apr 22, 2014
Priority date	Apr 22, 2013
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

The present invention is based on a unique design of a novel structure, which incorporates two quantum dots of a different bandgap separated by a tunneling barrier. Upconversion is expected to occur by the sequential absorption of two photons. In broad terms, the first photon excites an electron-hole pair via intraband absorption in the lower bandgap dot, leaving a confined hole and a relatively delocalized electron. The second absorbed photon can lead, either directly or indirectly, to further excitation of the hole, enabling it to then cross the barrier layer. This, in turn, is followed by radiative recombination with the delocalized electron.

First claim

The invention claimed is:

1. A colloidal semiconducting structure comprising:
two quantum dots of different bandgap physically coupled to one another and spaced apart via a tunneling barrier material, the first of said quantum dots being light emitting while the second of said quantum dots being capable of responding to photoexcitation by creation of excited charge carriers, the materials of the quantum dots and of the barrier are selected to form a double well structure to electrically separate carriers into two spatially distinct regions, while an oppositely charged carrier is spatially localized in a single region or further delocalized throughout an entire structure, such that said quantum dots are capable upon photoexcitation of both quantum dots to emit in at least one of two distinct spectra, wherein said quantum dots and said tunneling barrier material form a potential well in at least one of a conduction band and a valence band, and said colloidal semiconducting structure is configured and operable to exhibit efficient luminescence upconversion followed by radiative recombination.

2. The structure of claim 1 , wherein the materials of the first and second quantum dots are selected such that the material of the first quantum dot has a higher energy band gap than the energy band gap of the second quantum dot.

3. The structure of claim 1 , wherein at least one of said first and second quantum dots comprises at least one nanoparticle.

4. The structure of claim 1 , wherein said first and second quantum dots are made of different materials.

5. The structure of claim 1 , wherein said second quantum dot comprises an emitting quantum dot.

6. The structure of claim 1 , wherein at least one of said first and second quantum dots is embedded in the barrier material.

7. The structure of claim 6 , wherein said second quantum dot is embedded in the barrier material forming a first arrangement being coated by said first quantum dot.

8. The structure of claim 1 , wherein said barrier has a rod-like shape.

9. The structure of claim 8 , wherein said second particle is located at the tip of the rod-like barrier.

10. The structure of claim 8 , wherein said barrier comprises nanorods made of at least one of CdS, ZnSe and CdSeS alloy.

11. The structure of claim 1 , wherein at least one of said first and second quantum dots materials comprises semiconducting nanocrystals.

12. The structure of claim 11 , wherein at least one of said semiconducting nanocrystals comprises Group II-VI compound semiconductor nanocrystals, Group III-V or IV-VI compound semiconductor nanocrystals.

13. The structure of claim 11 , wherein at least one of said first and second quantum dots being made of one or more indirect band gap materials.

14. The structure of claim 11 , wherein said second quantum dot comprises at least one of Te-doped CdSe, CdTe, ZnTe, Te-doped ZnSe, PbS, Ag 2 S, CuInS 2 , InAs, InSb, PbSe.

15. The structure of claim 10 , wherein said first quantum dot comprises at least one of CdZnSe and CdSe, ZnSe.

16. The structure of claim 1 , wherein at least one of a size of at least one of said first and second nanoparticles and relative concentration of the materials is selectable to provide tunability of absorption edge and luminescence color.

17. The structure of claim 1 , wherein said first and second quantum dots are coupled via Coulomb-mediated exciton-exciton interactions.

18. The structure of claim 1 , wherein said first and second quantum dots are coupled via Auger recombination or direct intraband absorption.

19. The structure of claim 1 , wherein each of said first and second quantum dots is a single particle.

20. The structure of claim 1 , wherein each of said first and second quantum dots forms a layer respectively creating a multi-layer structure.

21. The structure of claim 20 , wherein said multi-layer structure is achieved by self-assembly or layer-by-layer deposition.

22. The structure of claim 20 , further comprising rare-earth doped nanocrystals.

23. The structure of claim 1 , wherein said potential well is a double potential well and charge carriers of the same type are confined in two spatially distinct regions of said double potential well.

Assignees

• Yeda Res & Dev

Inventors

• Oron Dan
• Deutsch Zvi
• Neeman Lior

Classifications

• H01L31/035218 Primary

  Electricity · mapped topic

• H01L31/055

  Electricity · mapped topic

• C09K11/54

  containing zinc or cadmium · CPC title

• H01L31/02322

  Electricity · mapped topic

• Y02E10/52

  PV systems with concentrators · CPC title