Contact area structure and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9576901-B1
Application number	US-201615053106-A
Country	US
Kind code	B1
Filing date	Feb 25, 2016
Priority date	Feb 25, 2016
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

A method for manufacturing a semiconductor device includes forming a contact area opening in a dielectric structure, depositing a contact area metal in the contact area opening, forming a metal cap layer on the contact area metal, forming one or more dielectric layers on the metal cap layer, forming one or more hard mask layers on the one or more dielectric layers, forming a metallization opening through the one or more dielectric and hard mask layers, wherein the metallization opening exposes the metal cap layer, removing the one or more hard mask layers, and forming a metallization layer in the metallization opening on the metal cap layer.

First claim

We claim:

1. A method for manufacturing a semiconductor device, comprising:
forming a contact area opening in a dielectric structure;
depositing a contact area metal in the contact area opening;
forming a metal cap layer on the contact area metal;
forming one or more dielectric layers on the metal cap layer;
forming one or more hard mask layers on the one or more dielectric layers;
forming a metallization opening through the one or more dielectric and hard mask layers, wherein the metallization opening exposes the metal cap layer;
removing the one or more hard mask layers; and
forming a metallization layer in the metallization opening on the metal cap layer;
wherein the contact area metal comprises cobalt and the metal cap layer comprises ruthenium.

2. The method according to claim 1 , wherein the dielectric structure comprises a plurality of dielectric layers in a stacked configuration.

3. The method according to claim 1 , wherein the ruthenium is deposited using chemical vapor deposition.

4. A method for manufacturing a semiconductor device, comprising:
forming a contact area opening in a dielectric structure;
depositing a contact area metal in the contact area opening;
forming a metal cap layer on the contact area metal;
forming one or more dielectric layers on the metal cap layer;
forming one or more hard mask layers on the one or more dielectric layers;
forming a metallization opening through the one or more dielectric and hard mask layers, wherein the metallization opening exposes the metal cap layer;
removing the one or more hard mask layers; and
forming a metallization layer in the metallization opening on the metal cap layer;
wherein the contact area metal comprises tungsten and the metal cap layer comprises cobalt.

5. The method according to claim 4 , wherein the cobalt is deposited using chemical vapor deposition.

6. A method for manufacturing a semiconductor device, comprising:
forming a contact area opening in a dielectric structure;
depositing a contact area metal in the contact area opening;
forming a metal cap layer on the contact area metal;
forming one or more dielectric layers on the metal cap layer;
forming one or more hard mask layers on the one or more dielectric layers;
forming a metallization opening through the one or more dielectric and hard mask layers, wherein the metallization opening exposes the metal cap layer;
removing the one or more hard mask layers;
forming a metallization layer in the metallization opening on the metal cap layer;
planarizing the contact area metal on the dielectric structure after depositing the contact area metal in the contact area opening; and
removing an upper portion of the contact area metal from the contact area opening to form a recessed area in the contact area opening.

7. The method according to claim 6 , wherein a depth of the recessed area from a top surface of the dielectric structure is in a range of about 3 nm to about 10 nm.

8. The method according to claim 6 , wherein the metal cap layer is formed in the recessed area.

9. The method according to claim 8 , wherein the metallization opening extends into the dielectric structure along a side of the metal cap layer.

10. The method according to claim 1 , further comprising depositing a flash film in the contact area opening prior to depositing the contact area metal in the contact area opening, wherein the flash film is deposited on sides and a bottom of the contact area opening.

11. A method for manufacturing a semiconductor device, comprising:
forming a contact area opening in a dielectric structure;
depositing a contact area metal in the contact area opening;
forming a metal cap layer on the contact area metal;
forming one or more dielectric layers on the metal cap layer;
forming one or more hard mask layers on the one or more dielectric layers;
forming a metallization opening through the one or more dielectric and hard mask layers, wherein the metallization opening exposes the metal cap layer;
removing the one or more hard mask layers;
forming a metallization layer in the metallization opening on the metal cap layer; and
depositing a flash film in the contact area opening prior to depositing the contact area metal in the contact area opening, wherein the flash film is deposited on sides and a bottom of the contact area opening;
wherein the contact area metal comprises cobalt and the flash film comprises ruthenium.

12. A method for manufacturing a semiconductor device, comprising:
forming a contact area opening in a dielectric structure;
depositing a contact area metal in the contact area opening;
forming a metal cap layer on the contact area metal;
forming one or more dielectric layers on the metal cap layer;
forming one or more hard mask layers on the one or more dielectric layers;
forming a metallization opening through the one or more dielectric and hard mask layers, wherein the metallization opening exposes the metal cap layer;
removing the one or more hard mask layers;
forming a metallization layer in the metallization opening on the metal cap layer; and
depositing a flash film in the contact area opening prior to depositing the contact area metal in the contact area opening, wherein the flash film is deposited on sides and a bottom of the contact area opening;
wherein the contact area metal comprises tungsten and the flash film comprises cobalt.

13. A method for manufacturing a semiconductor device, comprising:
forming a contact area opening in a dielectric structure;
depositing a contact area metal in the contact area opening;
forming a metal cap layer on the contact area metal;
forming one or more dielectric layers on the metal cap layer;
forming one or more hard mask layers on the one or more dielectric layers;
forming a metallization opening through the one or more dielectric and hard mask layers, wherein the metallization opening exposes the metal cap layer;
removing the one or more hard mask layers;
forming a metallization layer in the metallization opening on the metal cap layer; and
depositing a flash film in the contact area opening prior to depositing the contact area metal in the contact area opening, wherein the flash film is deposited on sides and a bottom of the contact area opening;
wherein a thickness of the flash film is in a range of about 2 nm to about 5 nm.

14. A method for manufacturing a semiconductor device, comprising:
forming a contact area opening in a dielectric structure;
depositing a contact area metal in the contact area opening;
forming a metal cap layer on the contact area metal;
forming one or more dielectric layers on the metal cap layer;
forming one or more hard mask layers on the one or more dielectric layers;
forming a metallization opening through the one or more dielectric and hard mask layers, wherein the metallization opening exposes the metal cap layer;
removing the one or more hard mask layers;
forming a metallization layer in the metallization opening on the metal cap layer; and
depositing a flash film in the contact area opening prior to depositing the contact area metal in the contact area opening, wherein the flash film is deposited on sides and a bottom of the contact area opening;
wherein the metallization opening extends into the dielectric structure along a side of the contact area opening comprising the flash film.

15. A semiconductor device, comprising:
a contact area opening in a dielectric structure;
a contact area metal formed in the contact area opening;
a metal cap layer on the contact area metal;
one or more dielectric layer

Assignees

• IBM

Inventors

• Chen Hsueh-Chung
• Fan Su Chen
• Yang Chih-Chao

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10W20/48

  Insulating materials thereof · CPC title

• H10W20/089

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H10W20/087

  involving multiple stacked pre-patterned masks · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title