Thermoelectric conversion material, thermoelectric conversion module using the same, and manufacturing method of the same

US9570667B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9570667-B2
Application numberUS-201514597609-A
CountryUS
Kind codeB2
Filing dateJan 15, 2015
Priority dateJul 17, 2012
Publication dateFeb 14, 2017
Grant dateFeb 14, 2017

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

According to an embodiment, a thermoelectric conversion material is made of a polycrystalline material which is represented by a composition formula (1) shown below and has a MgAgAs type crystal structure. The polycrystalline material includes a MgAgAs type crystal grain having regions of different Ti concentrations. (A a Ti b ) c D d X e   Composition formula (1) wherein 0.2≦a≦0.7, 0.3≦b≦0.8, a+b=1, 0.93≦c≦1.08, and 0.93≦e≦1.08 hold when d=1; A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb.

First claim

Opening claim text (preview).

What is claimed is: 1. A thermoelectric conversion material made of a polycrystalline material which is represented by a composition formula (1) shown below and has a MgAgAs type crystal structure, the polycrystalline material comprising: MgAgAs type crystal grains having regions of different Ti concentrations, (A a Ti b ) c D d X e   Composition formula (1) wherein 0.2≦a≦0.7, 0.3≦b≦0.8, a+b=1, 0.93≦c≦1.08, 0.93≦e≦1.08, and d=1; A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb. 2. The thermoelectric conversion material according to claim 1 , which comprises MgAgAs type crystal grains for which two or more peaks are present in a frequency graph in which a strength ratio of characteristic X-rays of Ti is plotted on a horizontal axis and a frequency for each strength of the characteristic X-rays of Ti is plotted on a vertical axis when the characteristic X-rays of Ti are measured at intervals of 0.2 μm in a MgAgAs type crystal grain on any cross section of the thermoelectric conversion material by EBSD (backscattering electron beam diffraction). 3. The thermoelectric conversion material according to claim 1 , which comprises MgAgAs type crystal grains for which two or more peaks are present in a frequency graph in which a strength ratio of characteristic X-rays of Ti is plotted on a horizontal axis and a frequency for each strength of the characteristic X-rays of Ti is plotted on a vertical axis when the characteristic X-rays of Ti are measured at intervals of 0.2 μm in a MgAgAs type crystal grain on any cross section of the thermoelectric conversion material by EBSD (backscattering electron beam diffraction), and a ratio (K1/K2) of a frequency K1 of a highest peak to a frequency K2 of a lowest peak is 1.2 or greater. 4. The thermoelectric conversion material according to claim 1 , which comprises MgAgAs type crystal grains for which two or more peaks are present in a frequency graph in which a strength ratio of characteristic X-rays of Ti is plotted on a horizontal axis and a frequency for each strength of the characteristic X-rays of Ti is plotted on a vertical axis when the characteristic X-rays of Ti are measured at intervals of 0.2 μm in a MgAgAs type crystal grain in a unit area of 240 μm×80 μm on any cross section of the thermoelectric conversion material by EBSD (backscattering electron beam diffraction), and the MgAgAs type crystal grains have a number ratio of crystal grains of 30% or more and 100% or less. 5. The thermoelectric conversion material according to claim 2 , wherein a value obtained by subtracting a lower limit from an upper limit of the frequency graph is 10 or more. 6. The thermoelectric conversion material according to claim 1 , wherein when characteristic X-rays of Ti are measured at intervals of 0.2 μm in the MgAgAs type crystal grain on any cross section of the thermoelectric conversion material by EBSD (backscattering electron beam diffraction) to create a frequency graph in which a strength ratio of the characteristic X-rays of Ti is plotted on a horizontal axis and a frequency for each strength of the characteristic X-rays of Ti is plotted on a vertical axis, the frequency graph has one peak and a lower limit of the frequency graph is smaller than a frequency indicating a peak by 5 or more and an upper limit of the frequency graph is larger than the frequency indicating the peak by 5 or more. 7. The thermoelectric conversion material according to claim 6 , wherein a value obtained by subtracting the lower limit from the upper limit of the frequency graph is 15 or more. 8. The thermoelectric conversion material according to claim 1 , wherein when an area of 240 μm×80 μm on any sintered surface of the thermoelectric conversion material is analyzed by EBSD (backscattering electron beam diffraction) and a total number of crystal grains per unit area is set to 1, a number ratio of crystal grains comprising any crystal orientation of a (001) plane, a (101) plane, and a (111) plane is less than 0.5. 9. The thermoelectric conversion material according to claim 1 , wherein an average crystal grain size is 2 to 40 μm. 10. The thermoelectric conversion material according to claim 1 , wherein the polycrystalline material is a sintered body. 11. The thermoelectric conversion material according to claim 1 , wherein MgAgAs type crystal grains have an area ratio of 92% or more in an area of 240 μm×80 μm. 12. The thermoelectric conversion material according to claim 1 , wherein the D is at least one element selected from the group consisting of Ni and Co. 13. A thermoelectric conversion module, which comprises the thermoelectric conversion material according to claim 1 . 14. A manufacturing method of the thermoelectric conversion material according to claim 1 , comprising: preparing a raw material molten metal satisfying the composition formula (1); preparing a raw material powder by cooling the raw material molten metal at a cooling rate of 100° C./s or slower; molding the obtained raw material powder; and sintering the obtained molded body. 15. The manufacturing method of the thermoelectric conversion material according to claim 14 , wherein the preparing the raw material powder comprises producing an ingot by the cooling and pulverizing the ingot. 16. A manufacturing method of the thermoelectric conversion material according to claim 1 , comprising: preparing the raw material molten metal satisfying the composition formula (1); preparing the raw material powder by rapidly cooling the raw material molten metal at the cooling rate exceeding 100° C./s; heat-treating the obtained raw material powder in order to form the MgAgAs type crystal grains having the regions of different Ti concentrations; molding the heat-treated raw material powder; and sintering the obtained molded body. 17. A manufacturing method of the thermoelectric conversion material according to claim 1 , comprising: preparing the raw material molten metal satisfying the composition formula (1); preparing the raw material powder by rapidly cooling the raw material molten metal at the cooling rate exceeding 100° C./s; molding the obtained raw material powder; sintering the obtained molded body; and heat-treating the obtained sintered body in order to form the MgAgAs type crystal grains having the regions of different Ti concentrations. 18. The manufacturing method of the thermoelectric conversion material according to claim 16 , wherein the preparing the raw material powder by rapidly cooling the raw material molten metal at the cooling rate exceeding 100° C./s is an atomizing method.

Assignees

Inventors

Classifications

  • Thermal after-treatment · CPC title

  • Electricity · mapped topic

  • Alloys based on refractory metals · CPC title

  • starting from solid material, e.g. by crushing, grinding or milling ({C22C1/1084 takes precedence}; crushing, grinding or milling, in general, see the relevant subclasses, e.g. B02C) · CPC title

  • Both compacting and sintering (by forging B22F3/17) · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9570667B2 cover?
According to an embodiment, a thermoelectric conversion material is made of a polycrystalline material which is represented by a composition formula (1) shown below and has a MgAgAs type crystal structure. The polycrystalline material includes a MgAgAs type crystal grain having regions of different Ti concentrations. (A a Ti b ) c D d X e   Composition formula (1) wherein 0.2≦a≦0.7, 0.3≦b≦0…
Who is the assignee on this patent?
Toshiba Kk, Toshiba Materials Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01L35/20. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 14 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).