Transistor having nitride semiconductor used therein and method for manufacturing transistor having nitride semiconductor used therein

Patent metadata

Field	Value
Publication number	US-9570599-B2
Application number	US-201214427960-A
Country	US
Kind code	B2
Filing date	Dec 17, 2012
Priority date	Dec 17, 2012
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A portion of an AlN spacer layer of a high electron mobility transistor (GaN HEMI) having a nitride semiconductor used therein is removed only in a region directly below a gate electrode and in a vicinity of the region, and a length of a portion where the AlN spacer layer is not present is sufficiently smaller than a distance between a source electrode and a drain electrode.

First claim

The invention claimed is:

1. A method for manufacturing a transistor having a nitride semiconductor used therein, the transistor including: a channel layer through which electrons run; a barrier layer that is provided above the channel layer and contains at least one of indium, aluminum and gallium, and nitrogen; and a gate electrode, a source electrode, and a drain electrode that are arranged on the barrier layer,
the method comprising:
a step of forming a spacer layer that is larger in polarization than the barrier layer, on the channel layer;
a step of patterning a resist on the spacer layer except a portion where the spacer layer is removed;
a step of removing by etching the spacer layer located in a region to be directly below the gate electrode using the patterned resist as a mask;
a step of removing the patterned resist;
a step of forming the barrier layer on top of the channel layer and the spacer layer;
a step of forming an insulating film layer on the barrier layer;
a step of removing the insulating film layer corresponding to positions to be formed by the source electrode and the drain electrode, and then forming the source electrode and the drain electrode;
a step of re-patterning a resist on the insulating film layer, the source electrode, and the drain electrode except a portion where the gate electrode is formed;
a step of removing by etching the insulating film layer in a region to form the gate electrode using the re-patterned resist as a mask;
a step of removing the re-patterned resist;
a step of finally patterning a resist having a larger opening than a region where the insulating film layer is removed by etching;
a step of forming the gate electrode on the region where the insulating film layer is removed by etching, and on the insulating film layer; and
a step of removing the finally patterned resist.

Assignees

• Yamaguchi Yutaro
• Oishi Toshiyuki
• Otsuka Hiroshi
• Yamanaka Koji
• Mitsubishi Electric Corp

Inventors

• Yamaguchi Yutaro
• Oishi Toshiyuki
• Otsuka Hiroshi
• Yamanaka Koji

Classifications

• H01L29/2003

  Electricity · mapped topic

• H01L29/42376

  Electricity · mapped topic

• H01L29/778

  Electricity · mapped topic

• H01L29/66462

  Electricity · mapped topic

• H01L29/201

  Electricity · mapped topic