Compound semiconductor device and method of manufacturing the same
US-2015372125-A1 · Dec 24, 2015 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/201 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 403 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 92 |
| 2016 | 89 |
| 2017 | 75 |
| 2018 | 39 |
| 2019 | 30 |
| 2020 | 25 |
| 2021 | 19 |
| 2022 | 12 |
| 2023 | 10 |
| 2024 | 10 |
| 2025 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interface
US-9214518-B1 · Dec 15, 2015 · US
Field effect transistor with conduction band electron channel and uni-terminal response
US-9209180-B2 · Dec 8, 2015 · US
Nitride semiconductor wafer, nitride semiconductor element, and method for manufacturing nitride semiconductor wafer
US-9184242-B2 · Nov 10, 2015 · US
Mixed n/p type non-planar semiconductor structure with multiple epitaxial heads and method of making same
US-2015318217-A1 · Nov 5, 2015 · US
Low interfacial defect field effect transistor
US-2015311302-A1 · Oct 29, 2015 · US
Fet transistor on a iii-v material structure with substrate transfer
US-2015311330-A1 · Oct 29, 2015 · US
Switching device
US-2015295073-A1 · Oct 15, 2015 · US
Electronic device having quantum dots and method of manufacturing the same
US-2015295128-A1 · Oct 15, 2015 · US
Method of manufacturing a semiconductor device
US-2015287806-A1 · Oct 8, 2015 · US
Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
US-2015287589-A1 · Oct 8, 2015 · US
Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device
US-2015287878-A1 · Oct 8, 2015 · US
Tunneling field effect transistor device and related manufacturing method
US-9153585-B2 · Oct 6, 2015 · US
Fault tolerant design for large area nitride semiconductor devices
US-9153509-B2 · Oct 6, 2015 · US
Semiconductor manufacturing method and semiconductor device
US-2015279747-A1 · Oct 1, 2015 · US
Compound semiconductor device having gallium nitride gate structures
US-2015270371-A1 · Sep 24, 2015 · US
Heterostructure field effect transistor having high efficiency and method of preparing the same
US-2015270381-A1 · Sep 24, 2015 · US
Operational gallium nitride devices
US-2015263100-A1 · Sep 17, 2015 · US
Semiconductor device
US-2015263099-A1 · Sep 17, 2015 · US
Group iii nitride semiconductor device, p-type contact structure, and method for fabricating group iii nitride semiconductor device
US-2015255958-A1 · Sep 10, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/201?
- CPC H01L29/201 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/201 (Electricity)?
- Our database includes 403 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/201 growing?
- Publication counts under this code: 10 in 2024 vs 2 in 2025 (latest complete years).