Resin-sealed semiconductor device and method of manufacturing resin-sealed semiconductor device

Patent metadata

Field	Value
Publication number	US-9570408-B2
Application number	US-201214369729-A
Country	US
Kind code	B2
Filing date	May 8, 2012
Priority date	May 8, 2012
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A resin-sealed semiconductor device 10 of the present invention includes: a mesa-type semiconductor element 100 which includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin 40 which seals the mesa-type semiconductor element 100 , wherein the mesa-type semiconductor element 100 includes a glass layer which substantially contains no Pb as the glass layer. The resin-sealed semiconductor device of the present invention can acquire higher resistance to a reverse bias at a high temperature than a conventional resin-sealed semiconductor device, although the resin-sealed semiconductor device of the present invention has the structure where the mesa-type semiconductor element is molded with a resin in the same manner as the conventional resin-sealed semiconductor device.

First claim

The invention claimed is:

1. A resin-sealed semiconductor device comprising:
a mesa-type semiconductor element which includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and
a molding resin which seals the mesa-type semiconductor element,
wherein
the mesa-type semiconductor element includes, as the glass layer, a glass layer which is formed by baking a glass composition for protecting a semiconductor junction which is made of fine glass particles prepared from a material in a molten state,
the glass layer is formed using a glass composition which substantially contains none of Pb, P, As, Sb, Li, Na and K,
the glass composition contains at least SiO 2 , Al 2 O 3 , an oxide of alkaline earth metal, and
the glass composition can be baked at 1100° C. or below, and
(i) the content of SiO 2 falls within a range of 53 mol % to 73 mol %,
the content of Al 2 O 3 falls within a range of 11 mol % to 21 mol %,
a content of CaO falls within a range of 3 mol % to 9 mol %,
a content of MgO falls within a range of 11 mol % to 21 mol %,
the content of nickel oxide falls within a range of 0.01 mol % to 3 mol %, or,

(ii) the content of SiO 2 falls within a range of 32 mol % to 48 mol %,
the content of Al 2 O 3 falls within a range of 9 mol % to 13 mol %,
the content of CaO falls within a range of 15 mol % to 23 mol %,
a content of ZnO falls within a range of 18 mol % to 28 mol %,
a content of B 2 O 3 falls within a range of 3 mol % to 10 mol %,
the content of nickel oxide falls within a range of 0.01 mol % to 3 mol %.

Assignees

• Ogasawara Atsushi
• Ito Koji
• Ito Kazuhiko
• Muyari Koya
• Shindengen Electric Mfg

Inventors

• Ogasawara Atsushi
• Ito Koji
• Ito Kazuhiko
• Muyari Koya

Classifications

• H10W72/5522

  comprising gold [Au] · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title