Method for making epitaxial base

Patent metadata

Field	Value
Publication number	US-9570293-B2
Application number	US-201213647443-A
Country	US
Kind code	B2
Filing date	Oct 9, 2012
Priority date	Mar 28, 2012
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A method for making an epitaxial base includes the following steps. A plurality of grooves and a plurality of bulges are formed on an epitaxial growth surface of a substrate by etching the epitaxial growth surface. A carbon nanotube layer is located on the epitaxial growth surface, wherein the carbon nanotube layer defines a first part attached on top surface of bulges, and a second part suspended on the grooves. The second part of the carbon nanotube layer is attached on bottom surface of the grooves by treating the carbon nanotube layer.

First claim

What is claimed is:

1. A method for making an epitaxial base, the method comprising:
forming a plurality of grooves and a plurality of bulges on an epitaxial growth surface of a substrate;
placing a carbon nanotube layer on the substrate, wherein the carbon nanotube layer defines a first part attached to top surfaces of the plurality of bulges, and a second part suspended between the plurality of grooves; and
attaching the second part of the carbon nanotube layer to at least bottom surfaces of the plurality of grooves by treating the carbon nanotube layer.

2. The method of claim 1 , comprising fabricating the carbon nanotube layer which is a free-standing structure.

3. The method of claim 2 , further comprising fabricating the carbon nanotube layer from a carbon nanotube film or from a plurality of carbon nanotube wires.

4. The method of claim 3 , further comprising successively orienting a plurality of carbon nanotube segments, and drawing the carbon nanotube film from the plurality of carbon nanotube segments so that the plurality of carbon nanotube segments are serially joined from end-to-end.

5. The method of claim 4 , further comprising arranging a plurality of carbon nanotubes parallel to each other, and fabricating the plurality of carbon nanotube segments from the plurality of carbon nanotubes.

6. The method of claim 5 , further comprising arranging the plurality of carbon nanotubes parallel with the epitaxial growth surface.

7. The method of claim 1 , comprising forming each of the plurality of bulges which is bar-shaped and extends along a first direction.

8. The method of claim 7 , further comprising fabricating the carbon nanotube layer from a plurality of carbon nanotubes, and arranging the plurality of carbon nanotubes extending along a second direction perpendicular to the first direction.

9. The method of claim 1 , comprising forming the epitaxial growth surface which is patterned by following steps:
placing a patterned mask layer on the epitaxial growth surface;
etching the epitaxial growth surface to form a patterned surface; and
removing the patterned mask layer.

10. The method of claim 1 , comprising treating the carbon nanotube layer with a volatile organic solvent, mechanical compression, or electrostatic adsorption.

11. The method of claim 10 , further comprising treating the carbon nanotube layer with the volatile organic solvent by dripping the volatile organic solvent on the carbon nanotube layer.

12. The method of claim 1 , comprising attaching the second part of the carbon nanotube layer to side surfaces of the plurality of grooves.

13. The method of claim 12 , further comprising fabricating the carbon nanotube layer which is a continuous and free-standing structure, wherein the free-standing structure is capable of maintaining the continuous and free-standing structure after the carbon nanotube layer is being treated.

14. The method of claim 1 , comprising separating the first part from the second part of the carbon nanotube layer, and attaching the second part to only the bottom surfaces of the plurality of grooves.

15. A method for making an epitaxial base, the method comprising:
placing a plurality of bugles on an epitaxial growth surface of a substrate, and forming a plurality of grooves between the plurality of bulges;
placing a carbon nanotube layer directly on the substrate, wherein the carbon nanotube layer defines a first part attached to top surfaces of the plurality of bulges, and a second part suspended between the plurality of grooves; and
attaching the second part of the carbon nanotube layer to at least bottom surfaces of the plurality of grooves.

16. The method of claim 15 , wherein the plurality of bulges are placed on the epitaxial growth surface by the following steps:
fabricating a second carbon nanotube layer comprising a plurality of apertures;
placing the second carbon nanotube layer on the epitaxial growth surface;
growing a plurality of microstructures through the plurality of apertures on the epitaxial growth surface; and
removing the second carbon nanotube layer.

17. The method of claim 16 , wherein a material of the plurality of bulges is different from a material of the substrate.

18. A method for making an epitaxial base, the method comprising:
forming a plurality of grooves and a plurality of bulges on an epitaxial growth surface of a substrate by etching the epitaxial growth surface;
placing a carbon nanotube layer on the substrate, wherein the carbon nanotube layer comprises a first part attached to top surfaces of the plurality of bulges, and a second part suspended between the plurality of grooves; and
attaching the second part of the carbon nanotube layer to at least bottom surfaces of the plurality of grooves, wherein the carbon nanotube layer is continuously attached to the epitaxial growth surface during attaching the second part of the carbon nanotube layer to at least bottom surfaces of the plurality of grooves.

19. The method of claim 18 , wherein the second part of the carbon nanotube layer is attached on the bottom surfaces and side surfaces of the plurality of bulges.

20. The method of claim 19 , wherein the first part and the second part are in contact with each other.

Assignees

• Wei Yang
• Fan Shou-Shan
• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Wei Yang
• Fan Shou-Shan

Classifications

• H10P14/3442

  N-type · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/3256

  Microstructure · CPC title

• H10P14/2925

  Surface structures · CPC title