Resistive memory device and method of operating the same

Patent metadata

Field	Value
Publication number	US-9570170-B2
Application number	US-201514839606-A
Country	US
Kind code	B2
Filing date	Aug 28, 2015
Priority date	Nov 26, 2014
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A memory device includes a memory cell array having multiple memory cells arranged respectively in regions where first signal lines cross second signal lines. The memory device further includes a decoder having multiple line selection switch units connected respectively to the of first signal lines. Each of the multiple line selection switch units applies a bias voltage to a first signal line corresponding to each of the multiple line selection switch units in response selectively to a first switching signal and a second switching signal, voltage levels of which are different from each other in activated states.

First claim

What is claimed is:

1. A memory device comprising:
a memory cell array comprising a plurality of memory cells arranged respectively in regions where a plurality of first signal lines cross a plurality of second signal lines; and
a decoder comprising a plurality of line selection switch units connected respectively to the plurality of first signal lines;
wherein each of the plurality of line selection switch units applies a bias voltage to a first signal line corresponding to each of the plurality of line selection switch units in response selectively to a first switching signal and a second switching signal, and
wherein a first switch operating in response to the first switching signal and a second switch operating in response to the second switching signal, the first switch and the second switch are first conductive type transistors, and
wherein the first switch is turned on in response to a first voltage of the first switching signal and the second switch is turned on in response to a second voltage of the first switching signal, voltage levels of the first voltage and the second voltage being different from each other.

2. The memory device of claim 1 , wherein the first switch is connected to an individual source line providing a bias voltage to the first signal line, and the second switch is connected to a common source line providing an inhibit voltage commonly to the plurality of first signal lines.

3. The memory device of claim 1 , wherein the first switching signal is transited between the first voltage and a third voltage, and the second switching signal is transited between the second voltage and the third voltage.

4. The memory device of claim 3 , wherein when the memory device performs a set writing operation or a reading operation, the voltage level of the first voltage is higher than the voltage level of the second voltage, and when the memory device performs a reset writing operation, the voltage level of the first voltage is lower than the voltage level of the second voltage.

5. The memory device of claim 3 , wherein when the memory device performs a set writing operation or a reading operation, the voltage level of the first voltage is equal to or greater than a sum of a voltage level of a set write voltage or a read voltage provided to a first signal line selected from among the plurality of first signal lines as a bias voltage and a threshold voltage level of the first switch, and the voltage level of-the second voltage is greater than a threshold voltage level of the second switch.

6. The memory device of claim 3 , wherein when the memory device performs a set writing operation or a reading operation, the voltage level of the first voltage is greater than a threshold voltage level of the first switch, and the voltage level of the second voltage is greater than a voltage level of an inhibit voltage provided to unselected first signal lines from among the plurality of first signal lines as a bias voltage and a threshold voltage level of the second switch.

7. The memory device of claim 1 , further comprising:
a decoding block receiving the first voltage and the second voltage, and generating the first switching signal having the first voltage or the second switching signal having the second voltage based on an address; and
a voltage driving unit for providing the bias voltage to each of the plurality of line selection switch units.

8. The memory device of claim 7 , further comprising:
a voltage generator generating the first voltage and the second voltage, and varying at least one of the first voltage and the second voltage according to the operating mode of the memory device.

9. The memory device of claim 8 , wherein the voltage generator comprises:
a voltage selector for selecting the first voltage or the second voltage from among at least one power voltage applied from outside and at least one internal voltage generated in the memory device according to the operating mode of the memory device; and
a charge pump for generating the at least one internal voltage.

10. A memory device comprising:
a memory cell array comprising a first region comprising a first plurality of memory cells including at least one selected memory cell and unselected memory cells, and a second region comprising a second plurality of memory cells, the second plurality of memory cells being unselected memory cells; and
a switch block applying a selection voltage or an inhibit voltage to first signal lines in the first region in response to a first voltage of a first switching signal, and applying an inhibit voltage to first signal lines in the second region in response to a second voltage of a second switching signal, voltage levels of the first voltage and the second voltage are different from each other, and
wherein the switch block comprises a plurality of switch units, and each of the plurality of switch units includes a first MOS transistor and a second MOS transistor of a same conductive type, and connected respectively to the first signal lines in the first region and the second region.

11. The memory device of claim 10 , wherein the first MOS transistor is turned on when a voltage level of the first switching signal is the first voltage, and the second MOS transistor is turned on when a voltage level of the second switching signal is the second voltage.

12. The memory device of claim 11 , wherein at least one of the first voltage and the second voltage varies depending on an operating mode of the memory device.

13. A method of operating a memory device comprising a plurality of memory cells arranged respectively in regions where a plurality of first signal lines and a plurality of second signal lines cross each other, and each of the plurality of first signal lines is connected to at least two first conductive type transistor switches for providing a bias voltage, the method comprising:
applying a first voltage to one of the at least two first conductive type transistor switches that are connected to at least one first signal line, so that the one of the at least two first conductive type transistor switches is turned on and a selection voltage is applied to the at least one first signal line from among the plurality of first signal lines; and
applying a second voltage having a different voltage level than a voltage level of the first voltage to another of the at least two first conductive type transistor switches, so that the another one of the at least two first conductive type transistor switches is turned on and an inhibit voltage is provided to the at least one first signal line.

14. The method of claim 13 , wherein when the memory device performs a set writing operation or a reading operation, the voltage level of the first voltage is higher than the voltage level of the second voltage.

15. The method of claim 13 , wherein when the memory device performs a reset writing operation, the voltage level of the first voltage is lower than the voltage level of the second voltage.

16. The method of claim 13 , wherein the at least two first conductive type transistors comprise a first NMOS transistor and a second NMOS transistor, the first NMOS transistor being turned on in response to the first voltage, and the second NMOS transistor being turned on in response to the second voltage.

Assignees

• Yoon Chi-Weon
• Park Hyun-Kook
• Lee Yeong-Taek
• Kim Bo-Geun
• Lee Yong-Kyu
• Samsung Electronics Co Ltd

Inventors

• Yoon Chi-Weon
• Park Hyun-Kook
• Lee Yeong-Taek
• Kim Bo-Geun
• Lee Yong-Kyu

Classifications

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• G11C11/1657

  Word-line or row circuits · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C13/0028

  Word-line or row circuits · CPC title

• G11C13/004

  Reading or sensing circuits or methods · CPC title