Hardmask composition and method of forming patterns using the hardmask composition

Patent metadata

Field	Value
Publication number	US-9568825-B2
Application number	US-201514748911-A
Country	US
Kind code	B2
Filing date	Jun 24, 2015
Priority date	Jul 15, 2014
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent.

In the Chemical Formula 1,
A, B, R 1 and R 2 are the same as defined in the detailed description.

First claim

What is claimed is:

1. A hardmask composition, comprising:
a polymer represented by the following Chemical Formula 2:

wherein, in Chemical Formula 2,
A 1 , A 2 , B 1 and B 2 are independently a substituted or unsubstituted aromatic ring group,
R 1a , R 2a , R 1b , R 2b , R 1c , R 2c , R 1d and R 2d are independently fluorine, a hydroxy group, a substituted or unsubstituted aromatic ring group, or a combination thereof, and
m and n are integers of 0≦m≦200 and 0≦n≦200, provided that the sum of the m and n is at least 1; and
a solvent.

2. The hardmask composition as claimed in claim 1 , wherein the A 1 , A 2 , B 1 and B 2 are independently a substituted or unsubstituted C6 to C50 arylene group.

3. The hardmask composition as claimed in claim 1 , wherein the A 1 , A 2 , B 1 and B 2 are independently one of the groups listed in the Group 1 and Group 2:

wherein in the Group 1,
R 3 and R 4 are independently hydrogen, a hydroxy group, a methoxy group, an ethoxy group, a halogen, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C1 to C4 alkyl ether group, a substituted or unsubstituted C7 to C20 arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, or a combination thereof,

wherein in the Group 2,
X 1 and X 2 are independently one of groups listed in the following Group 1, and
R 5 and R 6 are independently hydrogen, a hydroxy group, a methoxy group, an ethoxy group, a halogen, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C1 to C4 alkyl ether group, a substituted or unsubstituted C7 to C20 arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, or a combination thereof.

4. The hardmask composition as claimed in claim 1 , wherein at least one of R 1a , R 2a , R 1b , R 2b , R 1c , R 2c , R 1d and R 2d is the substituted or unsubstituted aromatic ring group, the substituted or unsubstituted aromatic ring group being a substituted or unsubstituted naphthalene group, a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group, a substituted or unsubstituted pyrene group, a substituted or unsubstituted binaphthalene group, a substituted or unsubstituted anthracene group, a substituted or unsubstituted fluorene group, or a combination thereof.

5. The hardmask composition as claimed in claim 1 , wherein the polymer has a weight average molecular weight of about 1,000 to about 200,000.

6. The hardmask composition as claimed in claim 1 , wherein the polymer is included in an amount of about 0.1 wt % to about 30 wt % based on the total weight of the organic layer composition.

7. A method of forming patterns, the method comprising:
providing a material layer on a substrate;
applying the hardmask composition as claimed in claim 1 on the material layer;
heat-treating the hardmask composition to form a hardmask layer;
forming a silicon-containing thin layer on the hardmask layer;
forming a photoresist layer on the silicon-containing thin layer;
exposing and developing the photoresist layer to form a photoresist pattern;
selectively removing the silicon-containing thin layer and the hardmask layer using the photoresist pattern to expose a part of the material layer; and
etching an exposed part of the material layer.

8. The method as claimed in claim 7 , wherein the hardmask composition is applied using a spin-on coating method.

9. The method as claimed in claim 7 , wherein the hardmask layer is formed by heat-treating at about 100° C. to about 500° C.

10. The method as claimed in claim 7 , further comprising forming a bottom antireflective coating (BARC) before forming the photoresist layer.

11. The method as claimed in claim 7 , wherein the silicon-containing thin layer includes silicon oxynitride (SiON).

Assignees

• Samsung Sdi Co Ltd

Inventors

• Nam Youn-Hee
• Kim Hea-Jung
• Song Hyun-Ji

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6506

  Formation of intermediate materials · CPC title