Method for manufacturing graphene film, graphene film manufactured by same, electronic device comprising the graphene film

Patent metadata

Field	Value
Publication number	US-9567223-B2
Application number	US-201414456550-A
Country	US
Kind code	B2
Filing date	Aug 11, 2014
Priority date	Oct 7, 2013
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A method for manufacturing graphene is provided, comprising (1) introducing a supporting substrate in a reactor; (2) preparing (nano) crystalline alumina catalyst having catalytic activity on the supporting substrate to prepare an insulating substrate; (3) growing nano graphenes on the insulating substrate to manufacture graphene film comprising graphene layer of the nano graphenes, which are grown without use of metal catalyst substantially. The graphene layer composed of the nano graphene has spatially homogeneous structural and electrical properties even in synthesis as large area and can be applied to flexible electronic devices.
In addition, as it has easy detachment of the substrate and the graphene film and can detach the graphene film without damage of the substrate, leaving no residual graphene on the substrate, it is possible to grow the nano graphene by reusing the substrate.

First claim

What is claimed is:

1. A method for manufacturing graphene film, comprising:
(1) introducing a supporting substrate in a reactor;
(2) preparing a nano crystalline layer of the alumina catalyst having catalytic activity on the supporting substrate; and
(3) growing nano-graphenes on the nano crystalline layer of the alumina catalyst to manufacture a graphene film comprising a graphene layer of the nano-graphenes,
wherein the growing of the nano-graphenes is accomplished by pyrolyzing carbon source included in a reactive gas to grow the nano-graphenes on the supporting substrate,
wherein the method is essentially free of the use of a metal catalyst in the step (3), and
wherein the nano crystalline layer of the alumina catalyst comprises at least one selected from the group consisting of gamma alumina, delta alumina, and the combination thereof.

2. The method for manufacturing graphene film according to claim 1 , wherein a grain size of the nano graphene is controlled to 5 nm-1000 μm by controlling growth time of the nano graphene in the step (3).

3. The method for manufacturing graphene film according to claim 1 , wherein in the step (3), the nano graphenes are grown with growth time of no more than 120 mins.

4. The method for manufacturing graphene film according to claim 1 , wherein in the step (3), a growth temperature of the graphene film is no more than 1350° C.

5. The method for manufacturing graphene film according to claim 1 , wherein the carbo source in the step (3) is at least one selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol, propanol and the combinations thereof.

6. The method of manufacturing graphene film according to claim 1 , wherein the reactive gas in the step (3) comprises ambient gas which is at least one selected from the group consisting of nitrogen, helium, neon, argon, hydrogen, and the combinations thereof.

7. The method for manufacturing graphene film according to claim 1 , wherein the reactive gas comprises H 2 O and the content of H 2 O is no more than 20 ppm on the basis of total reactive gas.

8. The method for manufacturing graphene film according to claim 1 , wherein the graphene layer comprises single-layer or multi-layer graphene; and an adhesion energy between the layer of the alumina catalyst and the graphene layer has smaller value than that between graphene layers in the multi-layer graphene.

9. The method for manufacturing graphene film according to claim 1 , wherein the adhesion energy between the layer of the alumina catalyst and the graphene layer is no more than 5 meV/carbon atom.

10. The method for manufacturing graphene film according to claim 1 , wherein the Raman spectrum of the graphene layer has 2D peak shifted to red and FWHM of the 2D peak is 30-100 cm-1.

11. The method for manufacturing graphene film according to claim 1 , wherein a precursor for growth of the alumina catalyst comprises at least one aluminum precursor selected from the group consisting of trimethyl aluminium ((CH 3 ) 3 A1, TMA), aluminum isoproxide ([A1(OC 3 H7) 3 ], IPA), methylpyrolidine-tri-methyl aluminum (MPTMA), ethyl-pyridine-triethyl-aluminum (EPPTEA), ethyl-pyridine-dimethyl-aluminum hydridge (EPPDMAH), alane (A1CH 3 ) and the combinations thereof; and at least one oxygen precursor selected from the croup consisting of O 3 , H 2 O and the combination thereof.

12. The method for manufacturing graphene film according to claim 1 , wherein the step (2) comprises crystallizing amorphous or noncrystalline alumina and such crystallization is accomplished by a heat treatment at temperature range of 700° C.-1100° C. for 1-30 mins.

13. The method for manufacturing graphene film according to claim 1 , further comprising:
(4) detaching the graphene film from the nano crystalline layer of the alumina catalyst after the step (3).

14. The method for manufacturing graphene film according to claim 13 , wherein the step (4) comprises forming a graphene-polymer complex by spreading a polymer solution on the graphene layer and detaching the graphene film which includes the graphene-polymer film from the insulating substrate.

15. The method for manufacturing graphene film according to claim 13 , wherein the step (4) comprises manufacturing a graphene-polymer complex by bonding a cohesive polymer film and the graphene layer and detaching the graphene film which includes the graphene-polymer film from the nano crystalline layer of the alumina catalyst.

16. The method for manufacturing graphene film according to claim 13 , wherein the nano crystalline layer of the alumina catalyst in the step (4) detached from the graphene film is reused as the nano crystalline layer of the alumina catalyst of the step (1).

17. The method for manufacturing graphene film according to claim 13 , wherein the graphene layer has a sheet resistance of no more than 3 kΩ/□.

18. A graphene film comprising a graphene layer of nano-graphenes prepared in a method essentially free of the use of a metal catalyst having a grain size 5 nm-1000 μm wherein a sheet resistance of the graphene layer is no more than 3 kΩ/□; and the Raman spectrum of the graphene layer has 2D peak shifted to red and FWHM of the 2D peak is 30-100 cm −1 .

19. The graphene film according to claim 18 , wherein the graphene layer comprises nano graphenes having a ratio of a mean area to a variance of 0.7-0.9.

Assignees

• Korea Inst Sci & Tech

Inventors

• Song Yong Won
• Park Jae Hyun

Classifications

• C01B31/0484

  Chemistry & Metallurgy · mapped topic

• C01B31/0453 Primary

  Chemistry & Metallurgy · mapped topic

• H01B13/0016 Primary

  for heat treatment · CPC title

• H01B1/04

  mainly consisting of carbon-silicon compounds, carbon or silicon · CPC title

• B01J6/008

  Pyrolysis reactions (of hydrocarbons C10G9/00) · CPC title