Method for treating substrate that support catalyst particles for plating processing

Patent metadata

Field	Value
Publication number	US-9565776-B2
Application number	US-201314429702-A
Country	US
Kind code	B2
Filing date	Sep 27, 2013
Priority date	Sep 28, 2012
Publication date	Feb 7, 2017
Grant date	Feb 7, 2017

Abstract

The present invention provides a method for treating a substrate that supports metal fine particles for forming a plating layer on a circuit pattern or TSVs in various substrates, in which further micronization treatment is enabled compared with the conventional methods, and the formation of a stable plating layer is enabled. The present invention is a method for treating a substrate, the method including bringing a substrate into contact with a colloidal solution containing metal particles in order to support the metal particles that serve as a catalyst for forming a plating layer on the substrate, in which the colloidal solution contains metal particles formed of Pd and having a particle size of 0.6 nm to 4.0 nm and a face-to-face dimension of the (111) plane of 2.254 Å or more. When an organic layer such as SAM is formed on a surface of the substrate before this treatment, the binding force of the Pd particles can be increased.

First claim

The invention claimed is:

1. A method for treating a substrate, the method including bringing a substrate into contact with a colloidal solution containing metal particles in order to support the metal particles that serve as a catalyst for forming a plating layer on the substrate,
wherein the colloidal solution contains metal particles formed of Pd and having a particle size of 0.6 nm to 4.0 nm and a face-to-face dimension of a plane 111 of 2.254 Å or more but 2.388 Å or less.

2. The method for treating a substrate according to claim 1 , wherein the method comprising a step of forming an organic layer formed from an organic substance, on a surface of the substrate before the contacting with the colloidal solution.

3. The method for treating a substrate according to claim 2 , wherein a self-assembled monolayer (SAM) is formed as the organic layer.

4. The method for treating a substrate according to claim 3 , wherein the step of forming a self-assembled monolayer is applying a silane coupling agent on the substrate.

5. The method for treating a substrate according to claim 2 , wherein a film comprising a polyimide, polyethylene terephthalate, or polyethylene naphthalate is formed as the organic layer.

6. The method for treating a substrate according to claim 1 , wherein the concentration of the metal particles in the colloidal solution is adjusted to 9.3×10 −6 to 3.8×10 −1 mol/L.

7. The method for treating a substrate according to claim 1 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.

8. The method for treating a substrate according to claim 2 , wherein the step of forming an organic layer is applying a silane coupling agent on the substrate.

9. The method for treating a substrate according to claim 3 , wherein a film comprising a polyimide, polyethylene terephthalate, or polyethylene naphthalate is formed as the organic layer.

10. The method for treating a substrate according to claim 4 , wherein a film comprising a polyimide, polyethylene terephthalate, or polyethylene naphthalate is formed as the organic layer.

11. The method for treating a substrate according to claim 2 , wherein the concentration of the metal particles in the colloidal solution is adjusted to 9.3×10 −6 to 3.8×10 −1 mol/L.

12. The method for treating a substrate according to claim 3 , wherein the concentration of the metal particles in the colloidal solution is adjusted to 9.3×10 −6 to 3.8×10 −1 mol/L.

13. The method for treating a substrate according to claim 4 , wherein the concentration of the metal particles in the colloidal solution is adjusted to 9.3×10 −6 to 3.8×10 −1 mol/L.

14. The method for treating a substrate according to claim 5 , wherein the concentration of the metal particles in the colloidal solution is adjusted to 9.3×10 −6 to 3.8×10 −1 mol/L.

15. The method for treating a substrate according to claim 2 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.

16. The method for treating a substrate according to claim 3 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.

17. The method for treating a substrate according to claim 4 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.

18. The method for treating a substrate according to claim 5 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.

19. The method for treating a substrate according to claim 6 , wherein the substrate is a substrate having one or more via holes formed therein, and at least one aspect ratio of the via holes is 3 to 50.

Assignees

• Tanaka Precious Metal Ind
• A School Corp Kansai Univ

Inventors

• Nakamura Noriaki
• Taniuchi Junichi
• Kubo Hitoshi
• Ohshima Yuusuke
• Ishikawa Tomoko
• Shingubara Shoso
• Inoue Fumihiro

Classifications

• C23C18/30

  Activating {or accelerating or sensitising with palladium or other noble metal} · CPC title

• H05K3/426

  initial plating of through-holes in substrates without metal · CPC title

• C23C18/208

  with use of metal first · CPC title

• C23C18/34

  using reducing agents · CPC title

• C23C18/1893 Primary

  with use of organic or inorganic compounds other than metals, first · CPC title