Methods for processing bevel edge etching

Patent metadata

Field	Value
Publication number	US-9564308-B2
Application number	US-201514937716-A
Country	US
Kind code	B2
Filing date	Nov 10, 2015
Priority date	May 24, 2006
Publication date	Feb 7, 2017
Grant date	Feb 7, 2017

Abstract

The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

First claim

What is claimed is:

1. A method of cleaning a bevel edge of a substrate in an processing chamber, comprising:
placing a substrate on a substrate support in the processing chamber, the processing chamber includes an insulator plate that is disposed over the substrate support and during cleaning is maintained at a distance that is less than 1 mm apart;
connecting the substrate support to a resistor that is set to maintain a resistance that is greater than about 1 Mohm;
flowing a cleaning gas into the processing chamber via a center gas feed in the substrate support so that the cleaning gas flows from a center of the substrate support toward a periphery of the substrate support; and
generating a cleaning plasma using the cleaning gas near the bevel edge of the substrate to cause etching of the bevel edge, the cleaning plasma being generated by powering a bottom edge electrode with a RF power source and by grounding a top edge electrode that surrounds the insulator plate and opposes the substrate support, the bottom edge electrode surrounds the substrate support, the bottom edge electrode and the substrate support being electrically isolated from one another by a bottom dielectric ring, the resistor being set to greater than about 1 Mohm is configured to prevent drawing RF power to the substrate support from the RF power source coupled to the bottom edge electrode,
wherein a surface of the bottom edge electrode facing the substrate is coated with a bottom thin dielectric layer,
wherein a surface of the top edge electrode facing the substrate is coated with a top thin dielectric layer.

2. The method of claim 1 , wherein the bottom thin dielectric layer and the top thin dielectric layer are made of a material inert to the cleaning plasma to prevent corrosion of the top edge electrode and the bottom edge electrode and to reduce particle counts in the processing chamber.

3. The method of claim 2 , wherein the material is selected from the group consisting of yttrium oxide (Y 2 O 3 ), alumina (Al 2 O 3 ), silicon carbide (SiC).

4. The method of claim 1 , wherein maintaining the distance that is less than 1 mm prevents plasma from being formed over a top surface of the substrate that is away from an edge of the substrate.

5. The method of claim 1 , wherein the cleaning gas comprises either an oxygen-containing or a fluorine-containing gas.

6. The method of claim 1 , further comprising:
keeping a distance between the top edge electrode and the bottom edge electrode between about 0.5 cm to about 2.5 cm.

7. The method of claim 1 , further comprising:
removing the substrate from the processing chamber;
flowing a cleaning gas into the processing chamber; and
generating a cleaning plasma in the processing chamber to clean an interior of the processing chamber by powering the bottom edge electrode with a RF power source and by grounding the top edge electrode.

8. A method of cleaning a bevel edge of a substrate in an processing chamber, comprising:
placing a substrate on a substrate support in the processing chamber, the processing chamber includes an insulator plate that is disposed over the substrate support and during cleaning is maintained at a distance that is less than 0.4 mm apart;
connecting the substrate support to a resistor that maintains a resistance that is greater than about 1 Mohm;
flowing a cleaning gas into the processing chamber via a center gas feed in the substrate support so that the cleaning gas flows from a center of the substrate support toward a periphery of the substrate support; and
generating a cleaning plasma using the cleaning gas near the bevel edge of the substrate to cause etching of the bevel edge, the cleaning plasma being generated by powering a bottom edge electrode with a RF power source and by grounding a top edge electrode that surrounds the insulator plate and opposes the substrate support, the bottom edge electrode surrounds the substrate support, the bottom edge electrode and the substrate support being electrically isolated from one another by a bottom dielectric ring, the resistor set to greater than about 1 Mohm is configured to prevent drawing RF power to the substrate support from the RF power source coupled to the bottom edge electrode,
wherein, when the cleaning plasma is generated, a ratio of a distance between the bottom edge electrode or top edge electrode to a nearest ground to a distance between the top edge electrode and the bottom edge electrode is set to be greater than about 4:1.

9. The method of claim 8 , wherein the ratio being greater than about 4:1 assists in confining the cleaning plasma at the bevel edge.

10. The method of claim 8 ,
wherein a surface of the bottom edge electrode facing the substrate is coated with a bottom thin dielectric layer,
wherein a surface of the top edge electrode facing the substrate is coated with a top thin dielectric layer.

11. The method of claim 10 , wherein the coating of the top and bottom thin dielectric layer is selected from the group consisting of yttrium oxide (Y 2 O 3 ), alumina (Al 2 O 3 ), silicon carbide (SiC).

12. The method of claim 10 , wherein each of the bottom thin dielectric layer and the top thin dielectric layer is coated to a thickness of about 0.05 mm and about 0.1 mm.

13. The method of claim 8 , wherein maintaining the distance that is less than 0.4 mm prevents plasma from being formed over a top surface of the substrate that is away from an edge of the substrate.

14. The method of claim 8 , wherein the cleaning gas comprises either an oxygen-containing or a fluorine-containing gas.

15. The method of claim 8 , further comprising:
keeping a distance between the top edge electrode and the bottom edge electrode between about 0.5 cm to about 2.5 cm.

Assignees

• Lam Res Corp

Inventors

• Sexton Gregory S
• Bailey Iii Andrew D
• Kuthi Andras
• Kim Yunsang

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P70/54 Primary

  Cleaning of wafer edges · CPC title