Cold field electron emitters based on silicon carbide structures

Patent metadata

Field	Value
Publication number	US-9558907-B2
Application number	US-201614990035-A
Country	US
Kind code	B2
Filing date	Jan 7, 2016
Priority date	Jan 24, 2012
Publication date	Jan 31, 2017
Grant date	Jan 31, 2017

Abstract

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm 2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

First claim

What is claimed is:

1. A field emitter having a plurality of discrete emission projections extending from an emission face of the field emitter, the field emitter being monolithic and homogenous in a direction transverse to the emission face of the field emitter, the field emitter being porous and including silicon carbide.

2. The field emitter of claim 1 wherein the discrete emission projections have an average height within a range of from about 1 micron to about 100 microns, an average thickness of from about 0.1 microns to about 10 microns, and an average spacing of from about 1 micron to about 100 microns.

3. The field emitter of claim 1 wherein the field emitter has a porous structure with an average pore wall thickness of from about 10 nm to about 1,000 nm, and an average pore size of from about 10 nm to about 1,000 nm.

4. The field emitter of claim 1 wherein the emitter consists entirely of silicon carbide.

5. The field emitter of claim 1 further comprising an electrode upon a rear face of the emitter.

6. The field emitter of claim 1 further comprising a conductive trace along a rear face of the emitter.

7. The field emitter of claim 1 which is free of nanostructured tubes or rods.

8. The field emitter of claim 1 wherein the plurality of discrete emission projections are in the form of pillars, fins, or columns.

9. A field emitter comprising silicon carbide, wherein (i) the field emitter defines an emission face and includes a plurality of discrete emission projections extending from the emission face, (ii) the field emitter is monolithic and homogeneous in a direction transverse to the emission face of the field emitter, (iii) the field emitter is free of nanostructured tubes or rods, and (iv) the field emitter has a porous structure with an average pore size of from about 10 nm to about 1,000 nm.

10. The field emitter of claim 9 wherein the field emitter has the porous structure with an average pore wall thickness of from about 10 nm to about 1,000 nm.

11. The field emitter of claim 9 wherein the discrete emission projections have an average height within a range of from about 1 micron to about 100 microns, an average thickness of from about 0.1 microns to about 10 microns, and an average spacing of from about 1 micron to about 100 microns.

12. The field emitter of claim 9 wherein the emitter consists entirely of silicon carbide.

13. The field emitter of claim 9 further comprising an electrode upon a rear face of the emitter.

14. The field emitter of claim 9 further comprising a conductive trace along a rear face of the emitter.

15. The field emitter of claim 9 wherein the plurality of discrete emission projections are in the form of pillars, fins, or columns.

Assignees

• Sharifi Fred
• Lezec Henry
• Kang Myung-Gyu
• The Us Secretary Of Commerce The Nat Inst Of Standards And Tech
• Univ Maryland

Inventors

• Sharifi Fred
• Lezec Henry
• Kang Myung-Gyu

Classifications

• H01J2201/30484

  Carbides · CPC title

• H01J9/022

  of cold cathodes · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• Y10S977/814

  Group IV based elements and compounds, e.g. CxSiyGez, porous silicon · CPC title

• H01J2201/3048

  Semiconductor materials · CPC title