Semiconductor structures having low resistance paths throughout a wafer
US-2015332925-A1 · Nov 19, 2015 · US
US9556533B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9556533-B2 |
| Application number | US-201213572924-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 13, 2012 |
| Priority date | Aug 19, 2011 |
| Publication date | Jan 31, 2017 |
| Grant date | Jan 31, 2017 |
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A substrate processing apparatus includes a plurality of inlet pipes and a plurality of outlet pipes, connected to a processing tank and configured to be switched therebetween to create a flow of a processing liquid in the processing tank in a direction different from that of the processing liquid before the switching. The inlet pipes and the outlet pipes are each provided with a flow control device which is controlled by a control section so that upon the switching, a flow rate of the processing liquid flowing therethrough changes with time.
Opening claim text (preview).
What is claimed is: 1. A substrate processing apparatus comprising: a control section; a processing tank configured to hold a processing liquid; a substrate holder configured to hold a substrate and bring the substrate into contact with the processing liquid in the processing tank; a plurality of inlet pipes connected to the processing tank, each of the plurality of inlet pipes comprising a mass flow controller and being configured to be switched therebetween; and a plurality of outlet pipes connected to the processing tank, each of the plurality of outlet pipes comprising a mass flow controller and being configured to be switched therebetween, and being configured to create a flow of the processing liquid along a surface of the substrate in the processing tank in a second direction different from a first direction of the flow of the processing liquid before a switching between the plurality of inlet pipes, and the control section being configured to control each of the mass flow controllers to change a flow rate of the processing liquid supplied by one of the plurality of inlet pipes to the surface of the substrate with time over 1 second to 10 seconds, upon the switching between the plurality of inlet pipes or a switching between the plurality of outlet pipes; and a pump configured to supply the processing liquid into the processing tank in a circulatory manner through the plurality of inlet pipes and the plurality outlet pipes. 2. The substrate processing apparatus according to claim 1 , wherein the control section is further configured to control each of the mass flow controllers to maintain an overall flow rate of the processing liquid supplied into the processing tank at a constant flow rate even upon the switching between the plurality of inlet pipes and the switching between the plurality of outlet pipes.
Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title
by selectively depositing, e.g. by using selective CVD or plating · CPC title
by filling conductive material into holes, grooves or trenches · CPC title
using a liquid · CPC title
Tanks; Installations therefor · CPC title
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