Apparatus for controlling heat flow

Patent metadata

Field	Value
Publication number	US-9553083-B2
Application number	US-201514804830-A
Country	US
Kind code	B2
Filing date	Jul 21, 2015
Priority date	Jul 21, 2014
Publication date	Jan 24, 2017
Grant date	Jan 24, 2017

Abstract

An apparatus configured to control a heat flow is provided. The apparatus may include a semiconductor device region formed in a matrix; a heat rectifier region formed adjacent to the semiconductor device region; and a heat flow blocker formed in at least one region contacting the semiconductor device region and the heat rectifier region.

First claim

What is claimed is:

1. An apparatus configured to control a heat flow, the apparatus comprising:
a semiconductor device region formed in a matrix;
a heat rectifier region formed adjacent to the semiconductor device region; and
a heat flow blocker formed in at least one region contacting the semiconductor device region and the heat rectifier region,
wherein the heat flow blocker comprises internal materials distributed in a matrix material layer.

2. The apparatus of claim 1 , wherein the internal materials are formed to have a periodic arrangement in the matrix material layer at a gap of one of λ/4, λ/2, λ, or λ2 according to equation 1,
λ=ν/ f phonon   [equation 1]

wherein ν denotes a spread speed of a phonon in the matrix material layer and f phonon denotes a vibration frequency of the phonon.

3. The apparatus of claim 1 , wherein the matrix material layer is formed of a material having a different heat conductivity than the internal materials.

4. The apparatus of claim 3 , wherein the matrix material layer is formed of one of silicon (Si), gallium (Ga), arsenic (As) or a gallium arsenic compound (GaAs).

5. The apparatus of claim 3 , wherein a region in which the internal materials are formed is a region formed of an insulating material or a void region.

6. The apparatus of claim 1 , wherein the heat rectifier region is formed by bonding carbon nanotubes which have different diameters.

7. The apparatus of claim 1 , wherein a first end portion of the heat rectifier region contacts the semiconductor device region, and wherein the apparatus further comprises a heat waveguide region formed adjacent to a second end portion of the heat rectifier region.

8. The apparatus of claim 1 , wherein a first end portion of the heat rectifier region contacts the semiconductor device region, and a second end portion of the heat rectifier region is exposed to an external area.

9. The apparatus according to claim 7 , further comprising a plurality of heat blockers which contact the semiconductor device region, the heat rectifier region, and the heat waveguide region.

10. An apparatus configured to control a heat flow of a semiconductor device, the apparatus comprising:
a semiconductor device region formed in a matrix including the semiconductor device;
a heat rectifier region formed adjacent to the semiconductor device region;
a plurality of heat flow blockers which contact the semiconductor device region and the heat rectifier region,
wherein the plurality of heat flow blockers comprise internal materials distributed in a matrix material layer.

Assignees

• Samsung Electronics Co Ltd
• Snu R&Db Foundation

Inventors

• Park Yeonsang
• Lee Byoungho
• Hwang Sungwoo
• Roh Younggeun
• Lee Changwon

Classifications

• H10W40/257

  having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh or porous structures (H10W40/254, H10W40/251 take precedence) · CPC title

• H10W40/253

  Semiconductors · CPC title

• H10W40/25

  characterised by their materials · CPC title

• H01L27/0248 Primary

  Electricity · mapped topic

• H01L23/3733

  Electricity · mapped topic