Chemical mechanical polishing of alumina

US9551075B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9551075-B2
Application numberUS-201414450885-A
CountryUS
Kind codeB2
Filing dateAug 4, 2014
Priority dateAug 4, 2014
Publication dateJan 24, 2017
Grant dateJan 24, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm, and (v) first oxide particles with a per surface area per unit mass <100 m 2 /gm mixed with another oxide particle type having an average area per unit mass >150 m 2 /gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.

First claim

Opening claim text (preview).

The invention claimed is: 1. A chemical mechanical polishing (CMP) slurry, comprising: a plurality of colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water, (i) said plurality of colloidal particles having a particle size polydispersity >50% determined by a polydispersity formula for a distribution width (w) involving a first width (w 1 ) at a first particle size and a second width (w 2 ) at a second larger particle size, said polydispersity formula =(w 2 −w 1 ) ×100/d which includes 63% of a total of said plurality of colloidal particles by volume and said d av is an average particle size of said plurality of colloidal particles; and (ii) mixed particle types comprising said plurality of colloidal particles with average primary particle size >50 nm mixed with fumed oxide particles having an average primary particle size <25 nm, wherein a weight ratio of said fumed oxide particles to said colloidal particles is from 0.1% to 30% . 2. The slurry of claim 1 , wherein said colloidal particles comprise silica. 3. The slurry of claim 1 , wherein a pH of said slurry is >7. 4. The slurry of claim 1 , wherein said particle size polydispersity is >80%. 5. The slurry of claim 1 , further comprising alkali metal ions in a concentration from 500 ppm to 5 weight %.

Assignees

Inventors

Classifications

  • B24B37/20Primary

    Lapping pads for working plane surfaces · CPC title

  • C23F3/00Primary

    Brightening metals by chemical means · CPC title

  • containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

  • Aqueous dispersions (C09G1/02 takes precedence) · CPC title

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What does patent US9551075B2 cover?
A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxid…
Who is the assignee on this patent?
Sinmat Inc, Univ Florida
What technology area does this patent fall under?
Primary CPC classification B24B37/20. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Jan 24 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).