Semiconductor structures having low resistance paths throughout a wafer
US-2015332925-A1 · Nov 19, 2015 · US
US9551074B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9551074-B2 |
| Application number | US-201414297352-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 5, 2014 |
| Priority date | Jun 5, 2014 |
| Publication date | Jan 24, 2017 |
| Grant date | Jan 24, 2017 |
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A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.
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What is claimed is: 1. A solution for providing electroless deposition of a metal layer on a substrate, comprising: a solvent; a metal precursor; a first borane containing reducing agent; and a second borane containing reducing agent, wherein the first borane containing reducing agent has a deposition rate of at least two times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents. 2. The solution, as recited in claim 1 , wherein the metal precursor comprises at least one of a cobalt precursor, a nickel precursor, a copper precursor, an iron precursor or a palladium precursor. 3. The solution, as recited in claim 2 , wherein the metal precursor comprises a mixture of a cobalt precursor and a molybdenum precursor. 4. The solution, as recited in claim 3 , wherein the solvent is at last one of dimethyl sulfoxide (DMSO), ethylene glycol, ionic liquids, or water. 5. The solution, as recited in claim 4 , wherein the solution further comprises at least one of a complexing agent, a surfactant, or a pH adjustment agent. 6. The solution, as recited in claim 5 , wherein the first borane containing reducing agent is at least one of tert-butylamine borane, ammonia borane, dimethylsulfide borane, or dimethylamine borane (DMAB) and the second borane containing reducing agent is morpholine borane. 7. The solution, as recited in claim 5 , wherein the first borane containing reducing agent comprises borane dimethylamine and the second borane containing reducing agent comprises morpholine borane. 8. The solution, as recited in claim 2 , wherein the first borane containing reducing agent comprises borane dimethylamine and the second borane containing reducing agent comprises morpholine borane. 9. The solution, as recited in claim 1 , wherein the first borane containing reducing agent comprises borane dimethylamine and the second borane containing reducing agent comprises morpholine borane. 10. A solution for providing electroless deposition of a metal layer on a substrate, comprising: a solvent; a metal precursor; borane dimethylamine; and morpholine borane. 11. The solution, as recited in claim 10 , wherein the metal precursor comprises at least one of a cobalt precursor, a nickel precursor, a copper precursor, an iron precursor or a palladium precursor. 12. The solution, as recited in claim 11 , wherein the metal precursor comprises a mixture of a cobalt precursor and a molybdenum precursor. 13. The solution, as recited in claim 12 , wherein the solvent is at last one of dimethyl sulfoxide (DMSO), ethylene glycol, ionic liquids, or water. 14. The solution, as recited in claim 1 , wherein the first borane containing reducing agent is at least one of tert-butylamine borane or dimethylsulfide borane and the second borane containing reducing agent is morpholine borane.
using a liquid · CPC title
using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50 · CPC title
with alloys based on iron, cobalt or nickel · CPC title
using reducing agents · CPC title
using reducing agents · CPC title
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