Semiconductor and ferromagnetic insulator heterostructure
US-11424409-B2 · Aug 23, 2022 · US
US9548435B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9548435-B2 |
| Application number | US-201314429332-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 18, 2013 |
| Priority date | Sep 18, 2012 |
| Publication date | Jan 17, 2017 |
| Grant date | Jan 17, 2017 |
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An electronic platform comprising a substrate made of a ABO3 crystal ( 2 ) and at least one layer of a two-dimensional conducting sheet of carbon atoms ( 1 ) of a thickness between one and four atoms, characterized in that the conducting layer(s) is (are) placed on top of a face of the crystal whose orthogonal axis is at an angle up to 35° of the crystal's spontaneous polarization or c-axis. The invention achieves a sheet resistance lower than 1 Ω/square at temperatures higher than 77K.
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The invention claimed is: 1. An electronic platform comprising a substrate made of a ABO 3 crystal and at least one layer of a two-dimensional conducting sheet of carbon atoms of a thickness between one and four atoms, characterized in that the at least one layer of a two-dimensional conducting sheet of carbon atoms is placed on top of a face of the crystal whose orthogonal axis is at an angle up to 35° of the crystal's spontaneous polarization or c-axis. 2. An electronic platform according to claim 1 wherein the substrate is made of at least one of LiNbO 3 , LiTaO 3 , LiIO 3 , Ba x Sr 1-x TiO 3 , Pb(Zr x Ti 1-x )O 3 , with x varying between 0 and 1. 3. An electronic platform according to claim 2 wherein the at least one layer of a two-dimensional conducting sheet of carbon atoms is shaped as Hall bars. 4. A chip comprising the electronic platform according to claim 3 and gold contacts of a thickness of 10 to 1000 nm. 5. A chip according to claim 4 further comprising a layer of chromium of a thickness of 1 to 50 nm between the at least one layer of a two-dimensional conducting sheet of carbon atoms and the gold contacts. 6. A chip comprising the electronic platform according to claim 2 and gold contacts of a thickness of 10 to 1000 nm. 7. A chip according to claim 6 further comprising a layer of chromium of a thickness of 1 to 50 nm between the at least one layer of a two-dimensional conducting sheet of carbon atoms and the gold contacts. 8. An electronic platform according to claim 1 wherein the at least one layer of a two-dimensional conducting sheet of carbon atoms is shaped as Hall bars. 9. A chip comprising the electronic platform according to claim 1 and gold contacts of a thickness of 10 to 1000 nm. 10. A chip according to claim 9 further comprising a layer of chromium of a thickness of 1 to 50 nm between the at least one layer of a two-dimensional conducting sheet of carbon atoms and the gold contacts. 11. A process for fabricating an electronic platform comprising a substrate of a crystal of the form ABO 3 and at least one layer of a two-dimensional conducting sheet of carbon atoms of a thickness between one and four atoms, the method comprising the steps of depositing the at least one layer of a two-dimensional conducting sheet of carbon atoms on top of a face of the crystal whose orthogonal axis is at an angle up to 35° of the crystal's spontaneous polarization or c-axis, subjecting the at least one layer of a two-dimensional conducting sheet of carbon atoms and the substrate to a process of change of spontaneous polarization.
characterised by their form · CPC title
Electricity · mapped topic
Electricity · mapped topic
Inorganic insulating substrates, e.g. ceramic, glass · CPC title
Use of materials for the {conductive, e.g. } metallic pattern · CPC title
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