Electronic platform comprising an ABO3 type crystal and graphene, method for its manufacture and chip comprising the same

US9548435B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9548435-B2
Application numberUS-201314429332-A
CountryUS
Kind codeB2
Filing dateSep 18, 2013
Priority dateSep 18, 2012
Publication dateJan 17, 2017
Grant dateJan 17, 2017

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

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An electronic platform comprising a substrate made of a ABO3 crystal ( 2 ) and at least one layer of a two-dimensional conducting sheet of carbon atoms ( 1 ) of a thickness between one and four atoms, characterized in that the conducting layer(s) is (are) placed on top of a face of the crystal whose orthogonal axis is at an angle up to 35° of the crystal's spontaneous polarization or c-axis. The invention achieves a sheet resistance lower than 1 Ω/square at temperatures higher than 77K.

First claim

Opening claim text (preview).

The invention claimed is: 1. An electronic platform comprising a substrate made of a ABO 3 crystal and at least one layer of a two-dimensional conducting sheet of carbon atoms of a thickness between one and four atoms, characterized in that the at least one layer of a two-dimensional conducting sheet of carbon atoms is placed on top of a face of the crystal whose orthogonal axis is at an angle up to 35° of the crystal's spontaneous polarization or c-axis. 2. An electronic platform according to claim 1 wherein the substrate is made of at least one of LiNbO 3 , LiTaO 3 , LiIO 3 , Ba x Sr 1-x TiO 3 , Pb(Zr x Ti 1-x )O 3 , with x varying between 0 and 1. 3. An electronic platform according to claim 2 wherein the at least one layer of a two-dimensional conducting sheet of carbon atoms is shaped as Hall bars. 4. A chip comprising the electronic platform according to claim 3 and gold contacts of a thickness of 10 to 1000 nm. 5. A chip according to claim 4 further comprising a layer of chromium of a thickness of 1 to 50 nm between the at least one layer of a two-dimensional conducting sheet of carbon atoms and the gold contacts. 6. A chip comprising the electronic platform according to claim 2 and gold contacts of a thickness of 10 to 1000 nm. 7. A chip according to claim 6 further comprising a layer of chromium of a thickness of 1 to 50 nm between the at least one layer of a two-dimensional conducting sheet of carbon atoms and the gold contacts. 8. An electronic platform according to claim 1 wherein the at least one layer of a two-dimensional conducting sheet of carbon atoms is shaped as Hall bars. 9. A chip comprising the electronic platform according to claim 1 and gold contacts of a thickness of 10 to 1000 nm. 10. A chip according to claim 9 further comprising a layer of chromium of a thickness of 1 to 50 nm between the at least one layer of a two-dimensional conducting sheet of carbon atoms and the gold contacts. 11. A process for fabricating an electronic platform comprising a substrate of a crystal of the form ABO 3 and at least one layer of a two-dimensional conducting sheet of carbon atoms of a thickness between one and four atoms, the method comprising the steps of depositing the at least one layer of a two-dimensional conducting sheet of carbon atoms on top of a face of the crystal whose orthogonal axis is at an angle up to 35° of the crystal's spontaneous polarization or c-axis, subjecting the at least one layer of a two-dimensional conducting sheet of carbon atoms and the substrate to a process of change of spontaneous polarization.

Assignees

Inventors

Classifications

  • characterised by their form · CPC title

  • H01L39/005Primary

    Electricity · mapped topic

  • Electricity · mapped topic

  • Inorganic insulating substrates, e.g. ceramic, glass · CPC title

  • Use of materials for the {conductive, e.g. } metallic pattern · CPC title

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What does patent US9548435B2 cover?
An electronic platform comprising a substrate made of a ABO3 crystal ( 2 ) and at least one layer of a two-dimensional conducting sheet of carbon atoms ( 1 ) of a thickness between one and four atoms, characterized in that the conducting layer(s) is (are) placed on top of a face of the crystal whose orthogonal axis is at an angle up to 35° of the crystal's spontaneous polarization or c-axis. Th…
Who is the assignee on this patent?
Fundació Inst De Ciències Fotòniques, Institució Catalana De Recerca I Estudis Avançats, Fundació Inst De Ciències Fotòniques Parque Mediterraneo De La Tecnologia, and 1 more
What technology area does this patent fall under?
Primary CPC classification H01L39/005. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 17 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).