Method of forming a thin film that eliminates air bubbles

Patent metadata

Field	Value
Publication number	US-9548199-B2
Application number	US-201414481813-A
Country	US
Kind code	B2
Filing date	Sep 9, 2014
Priority date	Sep 9, 2014
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

A method, which forms an air-bubble-free thin film with a high-viscosity fluid resin, initially dispenses the fluid resin on an outer region of a semiconductor wafer while the semiconductor wafer is spinning, and then dispenses the fluid resin onto the center of the semiconductor wafer after the semiconductor wafer has stopped spinning.

First claim

What is claimed is:

1. A method of forming a thin film in a processing station, the processing station having a wafer chuck and a supply line, the supply line having a tube dispensing opening, the method comprising:
dispensing a fluid resin from the tube dispensing opening onto a semiconductor wafer while the semiconductor wafer is spinning, and changing a relative position between the wafer chuck and the tube dispensing opening so that the fluid resin is dispensed onto the semiconductor wafer in a circular pattern; and
while dispensing the fluid resin, decelerating the semiconductor wafer from spinning to a stop after the circular pattern has been formed, and changing a relative position between the wafer chuck and the tube dispensing opening so that the fluid resin continues from the circular pattern to a center of the semiconductor wafer, and then forms a puddle of resin over the center of the semiconductor wafer, wherein the process of dispensing the fluid resin continues after the spinning of the semiconductor wafer is stopped.

2. The method of claim 1 wherein the semiconductor wafer is stationary before the fluid resin is dispensed onto the center of the semiconductor wafer to form the puddle of resin.

3. The method of claim 1 and further comprising waiting a predetermined period of time after the fluid resin has been dispensed onto the center of the semiconductor wafer.

4. The method of claim 1 wherein the circular pattern moves inward towards the center of the semiconductor wafer.

5. The method of claim 4 wherein the circular pattern is a spiral.

6. The method of claim 4 wherein the circular pattern is a number of interconnected partially concentric circles.

7. The method of claim 3 and further comprising spinning the semiconductor wafer after the predetermined period of time.

8. The method of claim 7 and further comprising attaching the semiconductor wafer to the wafer chuck.

9. The method of claim 8 and further comprising changing a relative position between the wafer chuck and the tube dispensing opening so that the tube dispensing opening lies directly vertically above a start spot on a top surface of the semiconductor wafer before the wafer is spun, the start spot lying closer to an outer edge of the semiconductor wafer than to the center of the semiconductor wafer.

10. The method of claim 9 and further comprising spinning the wafer chuck to spin the semiconductor wafer after the tube dispensing opening has been positioned to lie directly vertically above the start spot, and prior to dispensing the fluid resin.

11. A method of forming a thin film in a processing station, the processing station having a wafer chuck and a supply line, the supply line having a tube dispensing opening, the method comprising:
dispensing a fluid resin from the tube dispensing opening onto a semiconductor wafer while the semiconductor wafer is spinning so that the fluid resin is dispensed onto the semiconductor wafer in a circular pattern; and
decelerating the semiconductor wafer from spinning to a stop after the circular pattern has been formed;
continuing to dispense the fluid resin after the semiconductor wafer has been stopped to form a puddle of resin over the center of the semiconductor wafer; and
then spinning the semiconductor wafer at a speed sufficient to cause the resin to flow towards and beyond an outer edge of the semiconductor wafer.

12. The method of claim 11 , further comprising waiting a predetermined period of time after the fluid resin has been dispensed onto the center of the semiconductor wafer.

13. The method of claim 11 , wherein the circular pattern moves inward towards the center of the semiconductor wafer.

14. The method of claim 13 , wherein the circular pattern is a spiral.

Assignees

• Texas Instruments Inc

Inventors

• Zheng Sandra
• Smiley Mark James
• Levack Douglas Jay
• Powell Ronald Dean

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10P14/6342 Primary

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P76/20 Primary

  of masks comprising organic materials · CPC title

• H01L21/02282 Primary

  Electricity · mapped topic