Resin, photoresist composition, and method for producing photoresist pattern

Patent metadata

Field	Value
Publication number	US-9547240-B2
Application number	US-201414550048-A
Country	US
Kind code	B2
Filing date	Nov 21, 2014
Priority date	Nov 26, 2013
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

A resin comprising:
a structural unit which has, at a side chain, a carbonyl group and a thiolactone ring-containing amino group where the thiolactone ring may have a substituent, and a structural unit having an acid-labile group.

First claim

What is claimed is:

1. A photoresist composition comprising:
a resin which comprises 6 to 60 mol % of a structural unit represented by formula (I-1):

where
R 1 represents a hydrogen atom, a halogen atom, or a C1-C6 alkyl group which may have a halogen atom;
L 1 represents a single bond or a C1-C18 divalent saturated hydrocarbon group where a methylene group can be replaced by an oxygen atom or a carbonyl group,
R 2 represents a hydrogen atom or a C1-C6 alkyl group,
R 3 represents a C1-C6 alkyl group, and
m represents an integer of 0 to 5,
a structural unit having an acid-labile group and being represented by formula (a1-1) or (a1-2):

where L a1 and L a2 each independently represent —O— or *—O—(CH 2 ) k1 —CO—O— in which k1 represents an integer of 1 to 7 and * represents a binding site to —CO—,
R a4 and R a5 each independently represent a hydrogen atom or a methyl group,
R a6 and a7 each independently represent a C1-C8 alkyl group, C3-C20 monovalent alicyclic hydrocarbon group, or a group formed by combining them,
m1 represents an integer of 0 to 14,
n1 represents an integer of 0 to 10, and
n1′represents an integer of 0 to 3; and
a structural unit represented by the formulae (a3-1), (a3-3) or (a3-4):

where L a4 and L a6 each independently represent *—O— or *—O—(CH 2 ) k3 —CO—O— in which * represents a binding position to —CO— and k3 represents an integer of 1 to 7,
R a18 and R a20 each independently represent a hydrogen atom or a methyl group,
R a21 represents a C1-C4 monovalent aliphatic hydrocarbon group,
R a23 is in each occurrence a carboxyl group, a cyano group or a C1-C4 monovalent aliphatic hydrocarbon group,
R a24 represents a hydrogen atom, a halogen atom, or a C1-C6 alkyl group which may have a halogen atom,
L a7 represents * 1 —O—, *1 —O-L a8 —O—, *1 —O-L a8 —CO—O—, *1 —O-L a8 —CO—O-L a9 -CO—O— or *1 —O-L a8 —CO—O-L 9a —O— in which L a8 and L a9 each independently represent a C1-C6 divalent alkanediyl group and *1 represents a binding position to —CO—
and p1 represents an integer of 0 to 5, and r1 represents an integer of 0 to 3;
an acid generator represented by formula (B1):

wherein Q 1 and Q 2 respectively represent a fluorine atom or a C1-C6 perfluoroalkyl group, L b1 represents a C1-C24 saturated hydrocarbon group in which a methylene group may be replaced by —O— or —CO— and in which a hydrogen atom may be replaced by a hydroxyl group or a fluorine atom,
Y represents a methyl group where a hydrogen atom may be replaced by a substituent, or a C3-C18 alicyclic hydrocarbon group where a hydrogen atom may be replaced by a substituent and where a methylene may be replaced by —O—, —SO 2 — or —CO—, and
Z + represents an organic cation; and
a salt which comprises an acid lower in acidity than an acid generated from the acid generator.

2. The photoresist composition according to claim 1 , wherein m is 1 to 5.

3. The photoresist composition according to claim 1 , wherein L 1 represents a single bond.

4. A process for producing a photoresist pattern comprising the following steps (1) to (5):
(1) a step of applying the photoresist composition according to claim 1 on a substrate,
(2) a step of forming a composition film by conducting drying,
(3) a step of exposing the composition film to radiation,
(4) a step of baking the exposed composition film, and
(5) a step of developing the baked composition film thereby to form a photoresist pattern.

Assignees

• Sumitomo Chemical Co

Inventors

• Ochiai Mitsuyoshi
• Ichikawa Koji
• Shimada Masahiko

Classifications

• C08F220/585

  and containing other heteroatoms, e.g. 2-acrylamido-2-methylpropane sulfonic acid [AMPS] · CPC title

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/325

  Non-aqueous compositions · CPC title

• C08F228/06

  by a heterocyclic ring containing sulfur · CPC title