Method of making a multicomponent film
US-9214630-B2 · Dec 15, 2015 · US
Method of making a multicomponent film
US9543517B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9543517-B2 |
| Application number | US-201514940340-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 13, 2015 |
| Priority date | Apr 11, 2013 |
| Publication date | Jan 10, 2017 |
| Grant date | Jan 10, 2017 |
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Abstract
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Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used trichlorogermane.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for depositing a germanium-containing film onto at least a portion of a substrate, the method comprising steps of: a. providing the substrate into a reactor; and b. introducing into the reactor a germanium precursor comprising HGeCI 3 under deposition conditions sufficient for the germanium precursor to react with the substrate and provide the germanium-containing film. 2. The method of claim 1 further comprising introducing a nitrogen source into the reactor wherein the nitrogen source reacts to provide a germanium-containing film. 3. The method of claim 2 wherein the nitrogen source is at least one selected from the group consisting of ammonia, ammonia plasma, a plasma comprising nitrogen and hydrogen, nitrogen plasma, and combinations thereof. 4. The method of claim 3 wherein the nitrogen source is ammonia.
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Classifications
characterized by the use of precursors specially adapted for ALD · CPC title
- C23C16/305Primary
Sulfides, selenides, or tellurides · CPC title
Deposition of only one other non-metal element · CPC title
characterised by the deposition of inorganic material, other than metallic material · CPC title
specially adapted for making ternary or higher compositions · CPC title
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- What does patent US9543517B2 cover?
- Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal comp…
- Who is the assignee on this patent?
- Air Prod & Chem
- What technology area does this patent fall under?
- Primary CPC classification C23C16/305. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).