Switch device and storage unit

Patent metadata

Field	Value
Publication number	US-9543512-B2
Application number	US-201514590014-A
Country	US
Kind code	B2
Filing date	Jan 6, 2015
Priority date	Jan 17, 2014
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A switch device includes: a first electrode; a second electrode arranged to face the first electrode; and a switch layer provided between the first electrode and the second electrode. The switch layer includes a first layer containing a chalcogen element, and a second layer containing a high resistance material.

First claim

What is claimed is:

1. A switch device comprising:
a first electrode;
a second electrode arranged to face the first electrode; and
a switch layer provided between the first electrode and the second electrode,
the switch layer including
a first layer containing a chalcogen element, and
a second layer containing a high resistance material,

wherein the second layer includes a first portion in contact with a first surface of the first layer, and a second portion in contact with a second surface of the first layer opposite the first surface, and
wherein the second electrode is in contact with a storage layer including a resistance variation layer and an ion source layer that contains one or more chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se).

2. The switch device according to claim 1 , wherein the first layer contains one or more of oxygen (O), sulfur (S), selenium (Se), and tellurium (Te).

3. The switch device according to claim 2 , wherein the first layer further contains one or more of germanium (Ge), antimony (Sb), silicon (Si), and arsenic (As).

4. The switch device according to claim 1 , wherein the second layer contains one of an oxide of a metal element, a nitride of the metal element, an oxide of a non-metal element, and a nitride of the non-metal element.

5. The switch device according to claim 4 , wherein the metal element is one or more of aluminum (Al), gallium (Ga), magnesium (Mg), silicon (Si), hafnium (Hf), and rare-earth elements.

6. The switch device according to claim 1 , wherein the first layer is varied to be in a low resistance state in response to setting of an application voltage to a predetermined threshold voltage or higher, and the first layer is varied to be in a high resistance state in response to decreasing of the application voltage to a voltage lower than the predetermined threshold voltage.

7. The switch device according to claim 1 , wherein the second layer includes a conductive path therein.

8. The switch device according to claim 1 , wherein the second layer has a resistance value that is higher than a resistance value of the first layer.

9. A storage unit comprising
a plurality of memory cells each including a first electrode, a second electrode arranged to face the first electrode, a storage device and a switch device configured to be connected to the storage device,
the switch device including
a switch layer provided between the first electrode and the second electrode, the switch layer including
a first layer containing a chalcogen element, and
a second layer containing a high resistance material,

the storage device including a storage layer between the first electrode and the second electrode, and
the storage layer including an ion source layer and a resistance variation layer, wherein the ion source layer contains one or more chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se).

10. The storage unit according to claim 9 , wherein the storage layer and the switch layer are laminated between the first electrode and the second electrode, and with a third electrode in between.

11. The storage unit according to claim 9 , wherein the storage layer and the switch layer are laminated with the second layer in between.

12. The storage unit according to claim 9 , wherein the storage layer and the switch layer are laminated with the resistance variation layer in between.

13. The storage unit according to claim 9 , wherein the second layer of the switch layer serves as the resistance variation layer of the storage layer.

14. The storage unit according to claim 9 , further comprising:
a plurality of row lines; and
a plurality of column lines, wherein
the plurality of memory cells are provided near respective intersection regions of the plurality of row lines and the plurality of column lines.

15. The storage unit according to claim 9 , wherein the resistance variation layer is made of a transition metal oxide.

16. The storage unit according to claim 9 , wherein the switch device is an ovonic threshold switch device.

17. The storage unit according to claim 9 , wherein the storage device has a write threshold voltage of 1.5 volts or higher.

18. The switch device according to claim 1 , wherein the storage layer and the switch layer are arranged with the second electrode therebetween.

19. The switch device according to claim 1 , wherein the storage layer and the switch layer are arranged between the first electrode and the second electrode.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Ohba Kazuhiro
• Sei Hiroaki

Classifications

• H01L27/2427

  Electricity · mapped topic

• H01L45/144 Primary

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic

• H01L45/04

  Electricity · mapped topic

• H01L45/142

  Electricity · mapped topic